2SB1216S-H

2SB1216, 2SD1816 Bipolar Transistor (−)100V, (−)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time ELECTRICAL CONNECTION 2,4 2,4 1 Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Switching Applications 1 3 3 2SB1216 2SD1816 1 : Base 2 : Collector 3 : Emitter 4 : Collector MARKING SPECIFICATIONS ( ) : 2SB1216 ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Value Unit (−) 120 V (−) 100 V (−) 6 V (−) 4 A (−) 8 A 1 W Collector Dissipation PC Tc=25°C 20 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. B1216 LOT No. RANK D1816 LOT No. RANK 4 4 1 1 2 3 IPAK / TP 2 3 DPAK / TP-FA ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2016 March 2016 - Rev. 2 1 Publication Order Number : 2SB1216_2SD1816/D 2SB1216, 2SD1816 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Conditions Value min typ max Unit Collector Cutoff Current ICBO VCB=(−)100V, IE=0A (−)1 μA Emitter Cutoff Current IEBO VEB=(−)4V, IC=0A (−)1 μA DC Current Gain hFE1 hFE2 VCE=(−)5V, IC=(−)0.5A VCE=(−)5V,IC=(−)3A Gain-Bandwidth Product fT Output Capacitance Cob VCE=(−)10V, IC=(−)0.5A VCB=(−)10V, f=1MHz Collector to Emitter Saturation Voltage VCE(sat) IC=(−)2A, IB=(−)0.2A (−200) 150 (−500) 400 Base to Emitter Saturation Voltage VBE(sat) IC=(−)2A, IB=(−)0.2A (−) 0.9 (−) 1.2 V(BR)CBO IC=(−)10μA, IE=0A (−)120 V V(BR)CEO IC=(−)1mA, RBE=∞ (−)100 V Emitter to Base Breakdown Voltage V(BR)EBO IE=(−)10μA, IC=0A Turn-On Time ton tstg Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Storage Time See specified Test Circuit 140* 400* 40 (130) 180 MHz (65) 40 (−) 6 pF mV V V 100 ns (800) 900 ns Fall Time 50 tf ns Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *: The 2SB1216/2SD1816 are classified by 0.5A hFE as follows: Rank S T hFE 140 to 280 200 to 400 Fig.1 Switching Time Test Circuit www.onsemi.com 2 2SB1216, 2SD1816 www.onsemi.com 3 2SB1216, 2SD1816 www.onsemi.com 4 2SB1216, 2SD1816 PACKAGE DIMENSIONS unit : mm IPAK / TP CASE 369AJ ISSUE O 1 : Base 2 : Collector 3 : Emitter 4 : Collector www.onsemi.com 5 2SB1216, 2SD1816 PACKAGE DIMENSIONS unit : mm DPAK / TP-FA CASE 369AH ISSUE O 1 : Base 2 : Collector 3 : Emitter 4 : Collector Recommended Soldering Footprint 7.0 7.0 2.5 2.0 1.5 2.3 www.onsemi.com 6 2.3 2SB1216, 2SD1816 ORDERING INFORMATION Device 2SB1216S-E Marking Package Shipping (Qty / Packing) B1216 2SB1216T-E B1216 2SD1816S-E D1816 2SD1816T-E D1816 2SB1216S-H B1216 2SB1216T-H B1216 2SD1816S-H D1816 2SD1816T-H D1816 2SB1216S-TL-E B1216 2SB1216T-TL-E B1216 2SD1816S-TL-E D1816 2SD1816T-TL-E D1816 2SB1216S-TL-H B1216 2SB1216T-TL-H B1216 2SD1816S-TL-H D1816 2SD1816T-TL-H D1816 IPAK / TP (Pb-Free) 500/ bag IPAK / TP (Pb-Free / Halogen Free) DPAK / TP-FA (Pb-Free) 700/ Tape & Reel DPAK / TP-FA (Pb-Free / Halogen Free) † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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