2SB817C-1E

Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • • • Large current capacitance Wide SOA and high durability against breakdown Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Conditions Ratings Unit VCBO VCEO -160 V -140 V --6 V Collector Current VEBO IC --12 A Collector Current (Pulse) ICP --20 A 2.5 W Collector to Emitter Voltage Emitter to Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 120 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7539-001 • Package : TO-3P-3L • JEITA, JEDEC : SC-65, TO-247, SOT-199 • Minimum Packing Quantity : 30 pcs./tube 2SB817C-1E 4.8 15.6 5.0 1.5 Marking 7.0 3.2 Electrical Connection 1.0 2 5.45 LOT No. 1 0.6 3 1.4 1 B817C 3 20.0 2.0 3.0 16.76 10.0 13.6 3.5 18.4 19.9 2 1 : Base 2 : Collector 3 : Emitter 5.45 TO-3P-3L Semiconductor Components Industries, LLC, 2013 January, 2014 12214 TKIM TC-00003086/N0508 MSIM TC-00001683/13106DA MSIM TB-00001810 No.A0188-1/4 2SB817C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base to Emitter Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-ON Time Storage Time Fall Time min typ ICBO IEBO hFE1 VCB=--160V, IE=0A VEB=--4V, IC=0A VCE=--5V, IC=--1A 100 hFE2 VCE=--5V, IC=--5A 35 fT Cob VCE=--5V, IC=--1A VBE VCE(sat) Collector to Emitter Saturation Voltage Ratings Conditions max Unit --0.1 mA --0.1 mA 200 10 VCB=--10V, f=1MHz VCE=--5V, IC=--5A 280 IC=--5A, IB=--0.5A --0.3 MHz pF --1.5 V --2.0 V V(BR)CBO V(BR)CEO IC=--5mA, IE=0A --160 V IC=--50mA, RBE=∞ --140 V V(BR)EBO ton IE=--5mA, IC=0A tstg tf See specified Test Circuit. --6 V 0.45 μs 1.75 μs 0.25 μs Switching Time Test Circuit IB1 PW=20Ms D.C.¾b1% INPUT OUTPUT IB2 VR RB 507 + RL= 107 + 100MF 470MF VBE=5V VCC= --50V IC= --10IB1=10IB2= --5A Ordering Information Device 2SB817C-1E Package Shipping memo TO-3P-3L 30pcs./tube Pb-Free IC -- VCE --16 --14 VCE= --5V --7 --400mA --10 --300mA --8 --200mA --6 --100mA --4 --40mA --20mA --2 IB=0mA 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Collector to Emitter Voltage, VCE -- V --9 --10 IT03410 --6 --5 12 0° 25° C C --40 °C --12 --4 Ta = --500mA Collector Current, IC -- A Collector Current, IC -- A IC -- VBE --8 --3 --2 --1 0 0 --0.5 --1.0 Base to Emitter Voltage, VBE -- V --1.5 IT03412 No.A0188-2/4 2SB817C hFE -- IC 3 IC / IB=10 Collector to Emitter Saturation Voltage, VCE(sat) -- V Ta=120oC 2 DC Current Gain, hFE 25oC --40oC 100 VCE(sat) -- IC 2 VCE= --5V 7 5 3 2 --1.0 7 5 3 2 --0.1 C 20o 0oC --4 7 1 Ta= 5 3 C 25o 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT03414 Collector Current, IC -- A 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT03416 PC -- Ta ICP=--20A P C =1 10m 20 s Collector Dissipation, PC -- W 1m IC=--12A 3 2 s W 10 0m s op --1.0 7 5 era tio 3 2 n --0.1 7 5 3 2 3 3.0 DC Collector Current, IC -- A --10 7 5 2 Collector Current, IC -- A SOA 5 3 2 --0.01 --0.01 Single pulse Tc=25oC --0.01 1.0 2 2.5 2.0 No he at 1.5 sin k 1.0 0.5 0 3 5 7 10 2 3 5 7 100 2 Collector to Emitter Voltage, VCE -- V 3 IT17372 0 20 40 60 80 100 120 Ambient Temperature, Ta -- oC 140 160 IT03419 PC -- Tc 140 Collector Dissipation, PC -- W 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Case Temperature, Tc -- oC 140 160 IT10416 No.A0188-3/4 2SB817C Outline Drawing 2SB817C-1E Mass (g) Unit 1.8 mm * For reference ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.A0188-4/4