2SC3150L

2SC3150L

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO-220-3

  • 描述:

    2SC3150L

  • 数据手册
  • 价格&库存
2SC3150L 数据手册
Ordering number:EN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features Package Dimensions · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. unit:mm 2010C [2SC3150] 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 900 V Collector-to-Emitter Voltage VCEO VEBO 800 V 7 V 3 A 10 A Emitter-to-Base Voltage Collector Current IC Collector Current (Pulse) ICP Base Current IB Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg PW≤300µs, Duty Cycle≤10% 1.5 A 50 W 150 ˚C –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA Emitter Cutoff Current IEBO VEB=5V, IC=0 VCE=5V, IC=0.2A 10 µA hFE1 DC Current Gain 10* 40* hFE2 fT VCE=5V, IC=1A Gain-Bandwidth Product VCE=10V, IC=0.2A 15 MHz Output Capacitance Cob VCB=10V, f=1MHz 60 pF 8 * : The hFE1 of the 2SC3150 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 10 K 20 15 L 30 20 M 40 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1098HA (KT)/5097KI/D064MW/6092KI No.1069–1/4 2SC3150 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol VCE(sat) VBE(sat) Ratings Conditions min typ max Unit IC=1.5A, IB=0.3A 2.0 V IC=1.5A, IB=0.3A 1.5 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=1mA, IE=0 900 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=5mA, RBE=∞ V(BR)EBO IE=1mA, IC=0 800 V 7 V VCEO(sus) IC=3A, L=500µH, IB=1A VCEX(sus)1 IC=1A, IB1=0.2A, IB2=–0.2A, L=2mH, clamped 800 V 800 V VCEX(sus)2 IC=0.5A, IB1=0.1A, IB2=–0.1A, L=5mH, clamped 900 Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Collector-to-Emitter Sustain Voltage Turn-ON Time ton IC=2A, IB1=0.4A, IB2=–0.8A, RL=200Ω, VCC=400V Storage Time tstg IC=2A, IB1=0.4A, IC=2A, IB1=0.4A, Fall Time tf IB2=–0.8A, RL=200Ω, IB2=–0.8A, RL=200Ω, VCC=400V VCC=400V V 1.0 µs 3.0 µs 0.7 µs Switching Time Test Circuit No.1069–2/4 2SC3150 No.1069–3/4 2SC3150 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 1998. Specifications and information herein are subject to change without notice. PS No.1069–4/4
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