2SC4617T1G

2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT-416 package which is designed for low power surface mount applications, where board space is at a premium. Features • • • • • • Reduces Board Space High hFE, 210 −460 (typical) Low VCE(sat), < 0.5 V Available in 8 mm, 7 inch/3000 Unit Tape and Reel S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT SC−75 CASE 463−01 STYLE 1 COLLECTOR 3 MAXIMUM RATINGS (TJ = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 5.0 Vdc IC 100 mAdc Collector Current − Continuous 1 BASE MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. B9 M G G THERMAL CHARACTERISTICS Characteristic 2 EMITTER 1 Symbol Max Unit Power Dissipation (Note 1) PD 125 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 ~ + 150 °C 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. B9 M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 6 1 Device Package Shipping† 2SC4617G SC−75 (Pb−Free) 3,000/Tape & Reel S2SC4617G SC−75 (Pb−Free) 3,000/Tape & Reel 2SC4617T1G SC−75 (Pb−Free) 3,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2SC4617/D 2SC4617G, S2SC4617G ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) V(BR)EBO 5.0 − − Vdc Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − − 0.5 mA Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) IEBO − − 0.5 mA − − 0.4 120 − 560 fT − 180 − MHz COB − 2.0 − pF Characteristic Collector-Emitter Saturation Voltage (Note 2) (IC = 60 mAdc, IB = 5.0 mAdc) VCE(sat) DC Current Gain (Note 2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Vdc hFE Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 2SC4617G, S2SC4617G TYPICAL ELECTRICAL CHARACTERISTICS 60 1000 160 mA 50 140 mA 40 120 mA 100 mA 30 80 mA 20 60 mA 10 IB = 20 mA TA = - 25°C 100 40 mA 0 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 10 0.1 8 1 Figure 1. IC − VCE 900 TA = 25°C 800 COLLECTOR VOLTAGE (mV) VCE , COLLECTOR‐EMITTER VOLTAGE (V) 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain 2 1.5 IC = 200 mA 1 100 mA 50 mA 0.5 10 mA 0 0.01 700 600 500 400 TA = 25°C VCE = 5 V 300 200 20 mA 100 0.1 1 IB, BASE CURRENT (mA) 10 0 0.2 100 1 5 10 20 40 60 80 100 150 200 Figure 4. On Voltage 7 20 6 Cob, CAPACITANCE (pF) 18 16 14 12 10 0.5 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Cib, INPUT CAPACITANCE (pF) VCE = 10 V TA = 25°C TA = 75°C DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) TA = 25°C 5 4 3 2 0 1 2 3 1 4 0 10 20 VEB (V) VCB (V) Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 30 40 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE G 3 1 2 DATE 07 AUG 2015 SCALE 4:1 −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.065 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.060 0.063 0.067 MIN 0.027 0.000 0.006 0.004 0.061 0.027 GENERIC MARKING DIAGRAM* A1 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M G STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 1 XX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.508 0.020 0.787 0.031 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB15184C SC−75/SOT−416 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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