Ordering number:ENN4135
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1855/2SC4837
50V/4A Switching Applications
Applications
Package Dimensions
· Power supplies, relay drivers, lamp drivers.
unit:mm
2084B
Features
[2SA1855/2SC4837]
· Adoption of FBET and MBIT processes.
· Large allowable collector dissipation.
· Low saturation voltage.
· Wide ASO and large current capacity.
· Usage of radial taping to meet automatic mounting.
4.5
1.9
10.5
2.6
1.4
1.0
8.5
1.2
7.5
1.2
1.6
0.5
0.5
1
2
3
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
( ) : 2SA1855
Specifications
2.5
2.5
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(–)60
V
Collector-to-Emitter Voltage
VCEO
(–)50
V
Emitter-to-Base Voltage
VEBO
IC
(–)6
V
(–)4
A
ICP
PC
(–)6
A
1.5
W
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Conditions
ICBO
IEBO
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
hFE1
hFE2
VCE=(–)2V, IC=(–)10mA
VCE=(–)2V, IC=(–)3A
fT
C ob
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
Gain Bandwidth Product
Output Capacitance
Ratings
min
typ
100*
max
Unit
(–)1
µA
(–)1
µA
400*
40
* : The 2SA1855/2SC4837 are classified by 100mA hFE as follows :
150
(39)25
MHz
pF
Continued on next page.
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/5132MH (KOTO) No.4135–1/4
2SA1855/2SC4837
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(–)2A, IB=(–)100mA
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(–)2A, IB=(–)100mA
Collector-to-Base Breakdown Voltage
Ratings
Conditions
min
V(BR)CBO IC=–10µA, IE=0
V(BR)CEO IC=–1mA, RBE=∞
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V(BR)EBO
ton
Storage Time
tstg
See specified Test CIrcuit
tf
See specified Test Circuit
Fall Time
IE=–10µA, IC=0
Unit
typ
max
(–350)
(–700)
mV
190
500
mV
(–)0.94
(–)1.2
V
(–)60
V
(–)50
V
(–)6
V
See specified Test CIrcuit
70
ns
(450)
ns
650
ns
(30)35
ns
Switching Time Test Circuit
PW=20µs
DC≤1%
IB1
OUTPUT
IB2
INPUT
RB
VR
50Ω
RL
25Ω
+
100µF
+
470µF
VCC=25V
VBE= --5V
IC=10IB1= --10IB2=1A
IC -- VCE
--5
IC -- VCE
5
2SC4837
2SA1855
100m
A
0m
--20
4
Collector Current, IC – A
Collector Current, IC – A
--4
mA
--100
50mA
--3
--
--20mA
--2
--10mA
--1
--5mA
IB=0
0
0
--0.4
--0.8
--1.2
40mA
3
20mA
2
10mA
5mA
1
IB=0
0
--1.6
Collector-to-Emitter Voltage, VCE – V
0
--2.0
0.4
A
Collector Current, IC – A
Collector Current, IC – A
--1.2
--6mA
--4mA
--0.8
--2mA
--0.4
2.0
ITR04918
2SC4837
7mA
1.6
--8mA
1.6
8mA
A
--10m
1.2
IC -- VCE
2.0
2SA1855
--12m
--1.6
0.8
Collector-to-Emitter Voltage, VCE – V
ITR04917
IC -- VCE
--2.0
A
80mA
60mA
6mA
5mA
1.2
4mA
0.8
3mA
2mA
0.4
1mA
IB=0
0
0
--4
--8
--12
--16
Collector-to-Emitter Voltage, VCE – V
IB=0
0
--20
ITR04919
0
4
8
12
16
Collector-to-Emitter Voltage, VCE – V
20
ITR04920
No.4135–2/4
2SA1855/2SC4837
IC -- VBE
--4.8
IC -- VBE
4.8
2SA1855
VCE= --2V
2SC4837
VCE=2V
--2.4
--1.6
--0.8
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V
0
--1.4
5
25°C
--25°C
2
100
7
5
0.6
0.8
1.0
1.2
2SC4837
VCE=2V
7
5
3
25°C
Ta=75°C
2
--25°C
100
7
5
3
3
2
2
10
1.4
ITR04922
hFE -- IC
1000
DC Current Gain, hFE
Ta=75°C
3
0.4
Base-to-Emitter Voltage, VBE – V
2SA1855
VCE= --2V
7
0.2
ITR04921
hFE -- IC
1000
DC Current Gain, hFE
1.6
0
0
10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC – A
3
5
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC – A
ITR04923
f T -- IC
1000
f=1MHz
5
3
2SC483
7
2
2SA1
855
100
7
5
3
2
(For PNP, minus sign is omitted.)
10
0.01
2
3
5
7 0.1
2
3
5
2
3
7 10
ITR04925
2
2SA1
855
2SC
4837
5
3
2
2
3
5
7
2
10
3
7
5
3
2
2 5° C
25°C
Ta= -75°C
5
7 100
ITR04926
VCE(sat) -- IC
2SC4837
IC / IB=20
3
--1000
2
7
Collector-to-Base Voltage, VCB – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
3
3
100
5
2SA1855
IC / IB=20
7
5
2
10
1.0
5
VCE(sat) -- IC
--100
3
(For PNP, minus sign is omitted.)
7 1.0
Collector Current, IC – A
5
5
Cob -- VCB
5
7
3
ITR04924
VCE=10V
Output Capacitance, Cob – pF
Gain-Bandwidth Product, fT – MHz
2.4
0.8
0
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
3.2
--25°C
--3.2
Ta=
75°
25°C C
Collector Current, IC – A
4.0
Ta=
75°
2 5° C
C
--25°
C
Collector Current, IC – A
--4.0
2
1000
7
5
3
2
100
7
5
25°C
Ta=75°C
3
C
--25°
2
10
--10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC – A
2
3
5
ITR04927
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC – A
2
3
5
ITR04928
No.4135–3/4
2SA1855/2SC4837
VBE(sat) -- IC
--10
5
3
2
25°C
Ta= --25°C
7
75°C
5
3
2
5
3
2
1.0
Ta= --25°C
25°C
7
75°C
5
3
2
0.1
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC – A
3
5
7 0.01
7
5
3
10
0m
2
DC
1.0
7
5
s
op
era
tio
n
3
2
0.1
7
5
Ta=25°C
Single pulse
For PNP, minus sign is omitted.
3
2
2
3
5
7 1.0
2
3
5
7
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC – A
2
3
5
ITR04930
PC -- Ta
1.6
2SA1855 / 2SC4837
1.5
1.4
Collector Dissipation, PC – W
2SA1855 / 2SC4837
1m
10 s
ms
ICP=6.0A
IC=4.0A
2
ITR04929
ASO
10
Collector Current, IC – A
2SC4837
IC / IB=20
7
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
7
--1.0
VBE(sat) -- IC
10
2SA1855
IC / IB=20
1.2
1.0
0.8
0.6
0.4
0.2
0
10
2
3
Collector-to-Emitter Voltage, VCE – V
5
7 100
ITR04931
0
20
40
60
80
100
120
Ambient Temperature, Ta – ˚C
140
160
ITR04932
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.4135–4/4
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
ON Semiconductor:
2SC4837S-AY
