2SC5200OTU

DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • • • • • • • • • • 1. Base 2. Collector 3. Emitter 1 High Current Capability: IC = 17 A High Power Dissipation: 150 W High Frequency: 30 MHz High Voltage: VCEO = 250 V Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Complement to 2SA1943 / FJL4215 Thermal and Electrical Spice Models are Available Same Transistor is also Available in: ♦ TO3P Package, 2SC5242 / FJA4313 : 130 Watts ♦ TO220 Package, FJP5200 : 80 Watts ♦ TO220F Package, FJPF5200 : 50 Watts These Devices are Pb−Free and are RoHS Compliant TO−264−3LD CASE 340CA MARKING DIAGRAM Logo AYWWZZ XXXXXX XXXXXX Applications • High−Fidelity Audio Output Amplifier • General Purpose Power Amplifier ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Ratings Units Collector−Base Voltage BVCBO 250 V Collector−Emitter Voltage BVCEO 250 V Emitter−Base Voltage BVEBO 5 V Collector Current (DC) IC 17 A Base Current IB 1.5 A Total Device Dissipation (TC = 25°C) Derate Above 25°C PD 150 1.04 W W/°C TJ, TSTG −50 ~ +150 °C Junction and Storage Temperature A YWW ZZ xxxxx = Assembly Location = Date Code = Assembly Lot = Specific Device Code (J4315O or C5200O) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted) Parameter Thermal Resistance, Junction to Case Symbol Max. Units RqJC 0.83 °C/W 1. Device mounted on minimum pad size. hFE CLASSIFICATION Classification R O hFE1 55 ~ 110 80 ~ 160 © Semiconductor Components Industries, LLC, 2009 February, 2022 − Rev. 3 1 Publication Order Number: FJL4315/D FJL4315, 2SC5200 ELECTRICAL CHARACTERISTICS (Note 2) (TC = 25°C unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit BVCBO Collector−Base Breakdown Voltage IC = 5 mA, IE = 0 250 V BVCEO Collector−Emitter Breakdown Voltage IC = 10 mA, RBE = ∞ 250 V BVEBO Emitter−Base Breakdown Voltage IE = 5 mA, IC = 0 5 V ICBO Collector Cut−Off Current VCB = 230 V, IE = 0 5.0 mA 5.0 mA IEBO Emitter Cut−Off Current VEB = 5 V, IC = 0 hFE1 DC Current Gain VCE = 5 V, IC = 1 A 55 hFE2 DC Current Gain VCE = 5 V, IC = 7 A 35 VCE(sat) Collector−Emitter Saturation Voltage IC = 8 A, IB = 0.8 A 0.4 3.0 VBE(on) Base−Emitter On Voltage VCE = 5 V, IC = 7 A 1.0 1.5 Current Gain Bandwidth Product VCE = 5 V, IC = 1 A 30 MHz Output Capacitance VCB = 10 V, f = 1 MHz 200 pF fT Cob 160 60 V V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 20 ms, Duty Cycle ≤ 2% ORDERING INFORMATION Part Number Marking Package Shipping Remarks 2SC5200OTU C5200O TO−264−3LD (Pb−Free) 375 Units / Tube hFE1 O grade FJL4315OTU J4315O TO−264−3LD (Pb−Free) 375 Units / Tube hFE1 O grade www.onsemi.com 2 FJL4315, 2SC5200 TYPICAL CHARACTERISTICS IB = 200mA I B = 180mA I B = 160mA I B = 140mA IB = 120mA 14 12 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT [A] 16 I B = 100mA 10 I B = 80mA 8 I B = 60mA 6 IB = 40mA 4 100 TJ = −25°C 10 2 IB = 0 0 0 2 4 6 8 10 12 14 16 18 1 20 1 hFE, DC CURRENT GAIN Figure 2. DC Current Gain (R Grade) VCE(sat), SATURATION VOLTAGE [mV] Figure 1. Static Characteristic TJ = 125°C TJ = 25°C VCE = 5 V 100 TJ = −25°C 10 1 1 10 10000 IC = 10 Ib 1000 TJ = 125°C 100 TJ = −25°C 1 0.1 VBE(sat), SATURATION VOLTAGE [mV] VCE = 5 V 10 8 6 4 2 0.6 0.8 10 Figure 4. Collector−Emitter Saturation Voltage 12 0.4 1 IC, COLLECTOR CURRENT [A] Figure 3. DC Current Gain (O Grade) 0.2 TJ = 25°C 10 IC, COLLECTOR CURRENT [A] 0 0.0 10 IC, COLLECTOR CURRENT [A] VCE, COLLECTOR−EMITTER VOLTAGE [V] IC, COLLECTOR CURRENT [A] VCE = 5 V TJ = 125°C TJ = 25°C 1.0 1.2 10000 1.4 VBE, BASE−EMITTER VOLTAGE [V] IC = 10 Ib 1000 TJ = −25°C TJ = 25°C TJ = 125°C 100 0.1 1 10 IC, COLLECTOR CURRENT [A] Figure 5. Base−Emitter On Voltage Figure 6. Base−Emitter Saturation Voltage www.onsemi.com 3 FJL4315, 2SC5200 1.0 100 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E−6 IC MAX. (Pulsed*) IC, COLLECTOR CURRENT [A] Rthjc, Transient Thermal Resistance [°C/W] TYPICAL CHARACTERISTICS 10 *SINGLE NONREPETITIVE o PULSE TC=25[ C] 1E−5 1E−4 1E−3 0.01 0.1 0.01 1 120 100 80 60 40 20 50 75 100 10 100 Figure 8. Safe Operating Area 140 25 1 VCE, COLLECTOR−EMITTER VOLTAGE [V] 160 PC, POWER DISSIPATION [W] DC 0.1 Figure 7. Power Derating 0 100ms* 1 Pulse Duration [s] 0 10ms* IC MAX. (DC) 125 150 175 TC, CASE TEMPERATURE [°C] Figure 9. Power Derating www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−264−3LD CASE 340CA ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13860G TO−264−3LD DATE 31 OCT 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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