2SC5226A-4-TL-E

Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • • • Low-noise : NF=1.0dB typ (f=1GHz) High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Conditions Ratings Unit VCBO VCEO 20 V 10 V VEBO IC 2 V 70 mA 150 mW Junction Temperature PC Tj Storage Temperature Tstg 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7023A-009 • Package : MCP • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 0.15 3 2SC5226A-4-TL-E 2SC5226A-5-TL-E Packing Type: TL Marking 0 to 0.08 1.25 2.1 0.425 2.0 0.2 Package Dimensions LOT No. 1 2 0.65 0.9 R A N K LOT No. TL 0.3 Electrical Connection 0.3 0.425 LN 1 : Base 2 : Emitter 3 : Collector MCP 3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 71812 TKIM/51408AB TIIM TC-00001340 No. A1062-1/8 2SC5226A Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A Gain-Bandwidth Product hFE fT VCE=5V, IC=20mA VCE=5V, IC=20mA Output Capacitance Cob Reverse Transfer Capacitance Cre Emitter Cutoff Current DC Current Gain Forward Transfer Gain Noise Figure Ratings Conditions min typ Unit max 60* 1.0 μA 10 μA 270* 5 7 GHz 0.75 VCB=10V, f=1MHz 1.2 0.5 pF pF 2 ⏐S21e⏐ 1 VCE=5V, IC=20mA, f=1GHz 12 dB 2 ⏐S21e⏐ 2 VCE=2V, IC=3mA, f=1GHz 8 dB NF VCE=5V, IC=7mA, f=1GHz 1.0 9 1.8 dB * : The 2SC5226A is classified by 20mA hFE as follows : Rank hFE 3 60 to 120 4 90 to 180 5 135 to 270 Ordering Information Package Shipping 2SC5226A-4-TL-E Device MCP 3,000pcs./reel 2SC5226A-5-TL-E MCP 3,000pcs./reel hFE -- IC 3 memo Pb Free fT -- IC 2 VCE=5V VCE=5V Gain-Bandwidth Product, fT -- GHz DC Current Gain, hFE 2 100 7 5 3 2 10 3 5 7 1.0 3 2 5 7 10 2 5 3 Collector Current, IC -- mA 3 2 1.0 1.0 7 5 3 2 0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 1.0 2 3 5 3 ITR07921 7 2 10 3 5 Collector Current, IC -- mA Reverse Transfer Capacitance, Cre -- pF f=1MHz 7 7 7 100 2 ITR07920 Cre -- VCB 3 2 Output Capacitance, Cre -- pF 5 5 2 7 100 ITR07919 Cob -- VCB 3 5 7 7 7 5 10 f=1MHz 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 3 ITR07922 No. A1062-2/8 2SC5226A ⏐S21e⏐2 -- IC 12 VCE=5V f=1GHz V CE 8 =2 V V Noise Figure, NF -- dB 10 10 6 4 8 6 4 2 2 0 NF -- IC 12 f=1GHz V CE = 5 Forward Transfer Gain,⏐S21e⏐2 -- dB 14 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR07924 PC -- Ta 160 0 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR07923 Collector Dissipation, PC -- mW 150 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR07925 No. A1062-3/8 2SC5226A f=100MHz, 200MHz to 2000MHz(200MHz Step) f=100MHz, 200MHz to 2000MHz(200MHz Step) 120° j25 j100 j150 10 0 VCE=2V IC=3mA --j10 50 100 VCE=5V IC=20mA 0.1GHz 150 250 ±180° --j250 --j200 --j150 0.1GHz --j100 0 --90° ITR07927 f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 2.0GHz 60° 2.0GHz j25 j100 2.0GHz VCE=2V 30° IC=3mA VCE=5V IC=7mA 0.1GHz 0.1GHz 0.04 0.08 0.12 0.16 0.2 0 0.1GHz ±180° 16 20 --60° --120° f=100MHz, 200MHz to 2000MHz(200MHz Step) 150° 12 --30° ITR07926 VCE=5V IC=20mA 30° --150° --j50 90° 60° VCE=5V IC=7mA 0.1GHz --j25 120° VCE=5V IC=20mA VCE=2V 0.1GHz I =3mA C 0.1GHz 2.0GHz 2.0GHz 8 2.0GHz 4 2.0GHz 2.0GHz 25 VCE =5V IC =7mA 150° j200 j250 j10 2.0GHz 90° 0.1GH z j50 j150 j200 j250 j10 0 10 50 100 150 VCE=5V 2.0GHz VCE=5V IC=20mA IC=7mA 2.0GHz 2.0GHz V =2V CE IC=3mA --j10 --30° --150° 25 250 --j250 --j200 --j150 --j100 --j25 --60° --120° --90° ITR07928 --j50 ITR07929 No. A1062-4/8 2SC5226A S Parameters (Common emitter) VCE=5V, IC=7mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.720 0.612 0.497 0.456 0.440 0.436 0.434 0.433 0.433 0.434 0.439 ∠S11 -46.0 -80.9 -121.3 -143.5 -157.6 -167.5 -176.1 176.6 170.9 165.0 159.6 ⏐S21⏐ 17.973 13.927 8.656 6.080 4.725 3.864 3.258 2.847 2.329 2.252 2.057 ∠S21 148.5 127.3 105.0 92.8 84.3 77.0 70.3 64.5 57.4 54.2 49.2 ⏐S12⏐ 0.030 0.047 0.066 0.079 0.094 0.110 0.126 0.143 0.160 0.178 0.197 ∠S12 68.5 57.1 51.3 52.9 55.4 56.8 57.9 58.4 58.9 58.6 58.1 ⏐S22⏐ 0.880 0.697 0.479 0.382 0.339 0.323 0.312 0.304 0.296 0.293 0.294 ∠S22 -23.6 -37.6 -47.6 -50.5 -51.8 -53.4 -55.8 -58.3 -62.0 -65.0 -68.1 ∠S11 -78.8 -119.2 -151.6 -166.4 -175.9 178.2 172.1 166.7 162.1 156.7 152.1 ⏐S21⏐ 29.795 19.008 10.416 7.084 5.407 4.401 3.701 3.217 2.839 2.534 2.319 ∠S21 132.9 112.2 95.4 86.6 80.1 74.1 68.5 63.6 58.8 54.3 50.1 ⏐S12⏐ 0.022 0.033 0.052 0.071 0.092 0.114 0.134 0.156 0.176 0.197 0.219 ∠S12 63.9 60.8 64.7 67.2 68.4 67.8 66.8 65.6 64.0 62.4 60.6 ⏐S22⏐ 0.707 0.470 0.296 0.236 0.213 0.208 0.204 0.202 0.199 0.197 0.197 ∠S22 -38.2 -51.1 -55.3 -56.1 -56.6 -57.9 -60.7 -63.5 -67.9 -71.2 -74.2 ∠S11 -32.4 -60.7 -101.1 -126.5 -143.7 -156.3 -166.8 -175.5 177.0 170.3 163.8 ⏐S21⏐ 9.413 8.187 5.855 4.337 3.444 2.871 2.446 2.145 1.904 1.714 1.564 ∠S21 157.2 138.5 113.8 98.4 87.7 78.5 70.5 63.5 57.1 51.7 45.9 ⏐S12⏐ 0.040 0.070 0.101 0.114 0.122 0.130 0.137 0.146 0.155 0.168 0.183 ∠S12 72.6 59.2 44.5 39.1 38.0 38.6 40.3 42.5 45.0 47.3 49.2 ⏐S22⏐ 0.945 0.833 0.637 0.515 0.454 0.426 0.407 0.393 0.382 0.379 0.378 ∠S22 -16.5 -29.3 -43.2 -50.0 -53.8 -57.1 -60.3 -63.8 -68.0 -72.0 -75.8 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.481 0.420 0.391 0.386 0.381 0.382 0.385 0.388 0.390 0.391 0.394 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.858 0.782 0.653 0.588 0.557 0.543 0.536 0.533 0.527 0.525 0.528 No. A1062-5/8 2SC5226A Embossed Taping Specification 2SC5226A-4-TL-E, 2SC5226A-5-TL-E No. A1062-6/8 2SC5226A Outline Drawing 2SC5226A-4-TL-E, 2SC5226A-5-TL-E Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No. A1062-7/8 2SC5226A ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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