2SC5551AE-TD-E

DATA SHEET www.onsemi.com RF Transistor 1 30 V, 300 mA, fT = 3.5 GHz, NPN Single PCP 3 SOT−89 / PCP−1 CASE 419AU 2SC5551A EB High fT: (fT = 3.5 GHz Typ) Large Current: (IC = 300 mA) Large Allowable Collector Dissipation (1.3 W Max) These are Pb−Free Devices LOT No. MARKING DIAGRAM Features • • • • 2 1: Base 2: Collector 3: Emitter RANK Product & Package Information • Package: PCP • JEITA, JEDEC: SC−62, SOT−89, TO−243 • Minimum Packing Quantity: 1,000 Pcs./Reel ELECTRICAL CONNECTION 2 Specifications 1 ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C) Parameter Symbol Conditions Ratings Unit Collector−to−Base Voltage VCBO 40 V Collector−to−Emitter Voltage VCEO 30 V Emitter−to−Base Voltage VEBO 2 V Collector Current IC 300 mA Collector Current (Pulse) ICP 600 mA Collector Dissipation PC 1.3 W When mounted on ceramic substrate (250 mm2 x 0.8 mm) Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C 3 ORDERING INFORMATION Device Package Shipping† 2SC5551AE−TD−E PCP (Pb−Free) 1,000 / Tape & Reel 2SC5551AF−TD−E PCP (Pb−Free) 1,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2013 April, 2022 − Rev. 3 1 Publication Order Number: 2SC5551A/D 2SC5551A ELECTRICAL CHARACTERISTICS (at Ta = 25°C) Ratings Symbol Parameter Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 20 V, IE = 0 A − − 1.0 mA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 A − − 5.0 mA DC Current Gain hFE1 VCE = 5 V, IC = 50 mA 90 − 270 hFE2 VCE = 5 V, IC = 300 mA 20 − − Gain−Bandwidth Product fT VCE = 5 V, IC = 50 mA − 3.5 − GHz Output Capacitance Cob VCB = 10 V, f = 1 MHz − 2.9 4.0 pF Reverse Transfer Capacitance Cre − 1.5 pF Collector−to−Emitter Saturation Voltage VCE(sat) IC = 50 mA, IB = 5 mA − 0.07 0.3 V Base−to−Emitter Saturation Voltage VBE(sat) IC = 50 mA, IB = 5 mA − 0.8 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *The 2SC5551A is classified by 50 mA hFE as follows : Table 1. Rank E F hFE 90 to 180 135 to 270 100 1000 450 mA 80 400 mA 350 mA 60 300 mA 250 mA 200 mA 40 150 mA 100 mA 20 3 2 100 7 5 3 2 50 mA IB = 0 mA 0 0 4 8 12 VCE = 5 V 7 5 hFE, DC Current Gain IC, Collector Current (mA) 500 mA 16 10 20 1.0 VCE, Collector−to−Emitter Voltage (V) 2 3 5 7 10 2 3 5 7 100 IC, Collector Current (mA) Figure 1. IC − VCE Figure 2. hFE− IC www.onsemi.com 2 2 3 5 71000 2SC5551A 7 20 VCE(sat), Collector−to−Emitter Saturation Voltage (V) 5 ⎟S21e⎟2, Forward Transfer Gain (dB) IC / IB = 10 3 2 0.1 7 5 3 VCE = 5 V 18 f = 200 MHz 16 14 12 f = 500 MHz 10 8 6 4 2 0 2 1.0 2 3 2 3 5 7 10 5 7 100 2 3 57 1.0 2 3 IC, Collector Current (mA) fT, Gain Bandwidth Product (GHz) Cob, Cre, Output Capacitance, Reverse Transfer Capacitance (pF) 10 7 f = 1 MHz 7 5 Cob 2 Cre 1.0 VCE = 5 V 5 3 2 1.0 7 5 3 2 2 3 5 7 2 10 3 5 7 100 1.0 2 3 VCB, Collector−to−Base Voltage (V) PC, Collector Dissipation (W) 1 ms 2 10 ms 100 7 5 DC operation Ta = 25°C Single pulse When mounted on ceramic substrate (250 mm2 x 0.8 mm) 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 Figure 6. fT − IC ICP = 600 mA IC = 300 mA 5 7 10 IC, Collector Current (mA) Figure 5. Cob, Cre − VCB IC, Collector Current (mA) 5 71000 0.1 1.0 3 2 3 5 7 100 Figure 4. MS21eM2 − IC 10 1000 7 5 2 3 IC, Collector Current (mA) Figure 3. VCE(sat) − IC 3 5 7 10 2 1.4 1.3 1.2 When mounted on ceramic substrate (250 mm2 x 0.8 mm) 1.0 0.8 0.6 0.4 0.2 0 3 5 0 VCE, Collector−to−Emitter Voltage (V) 20 40 60 80 100 120 Ta, Ambient Temperature (°C) Figure 7. ASO Figure 8. PC − Ta www.onsemi.com 3 140 160 2SC5551A Land Pattern Example Unit: mm 3.7 0.9 2.2 45° 1.0 1.8 1.5 1.0 1.5 3.0 Figure 9. Land Pattern Example www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−89 / PCP−1 CASE 419AU ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON79746E SOT−89 / PCP−1 DATE 30 APR 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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