2SC6082

Ordering number : ENA0279B 2SC6082 Bipolar Transistor http://onsemi.com 50V, 15A, Low VCE (sat) NPN TO-220F-3SG Applications • High-speed switching applications (switching regulator, driver circuit) Features • • Adoption of MBIT process Low collector-to-emitter saturation voltage • • Large current capacitance High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Ratings Unit 60 V 60 V VCEO 50 V VEBO IC 6 V 15 A 20 A ICP IB Base Current Conditions VCBO VCES Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg PW≤10μs, duty cycle≤1% Tc=25°C 3 A 2 W 23 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7529-002 • Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 Electrical Connection 6.68 3.3 Marking 15.87 2 A 1 3.23 15.8 2SC6082-1E 2.54 C6082 LOT No. 12.98 2.76 1.47 MAX DETAIL-A 0.8 1 2 3 3 (0.84) 0.5 FRAME 2.54 2.54 Semiconductor Components Industries, LLC, 2013 September, 2013 ( 1.0) EMC 1 : Base 2 : Collector 3 : Emitter TO-220F-3SG 60612 TKIM/12512 TKIM TC-00002709/72606/31506FA MSIM TB-00002089 No. A0279-1/7 2SC6082 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO VCB=40V, IE=0A VEB=4V, IC=0A hFE1 VCE=2V, IC=330mA VCE=2V, IC=10A hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Conditions Ratings min typ 200 10 μA 10 μA 560 50 VCE=10V, IC=2A VCE(sat) VBE(sat) Unit max 195 VCB=10V, f=1MHz IC=7.5A, IB=375mA MHz 85 200 IC=7.5A, IB=375mA pF 400 1.2 mV V V(BR)CBO V(BR)CES IC=100μA, IE=0A IC=100μA, RBE=0Ω 60 V 60 V V(BR)CEO IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=100μA, IC=0A 6 tstg tf See specified Test Circuit V 52 ns 560 ns 37 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 INPUT VR OUTPUT RB RL + 50Ω 100μF VBE= --5V + 470μF VCC=25V IC=20IB1= --20IB2=5A Ordering Information Device 2SC6082-1E Package Shipping memo TO-220F-3SG 50pcs./magazine Pb Free No. A0279-2/7 2SC6082 IC -- VCE 11 10 9 30mA 8 20mA 7 6 A 90mA 80m 5 70mA 60mA 10mA 4 3 2 IB=0mA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector-to-Emitter Voltage, VCE -- V 20mA 15mA 5 4 10mA 3 5mA 2 IB=0mA 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE -- V hFE -- IC 1000 1.0 IT10575 VCE=2V 7 14 5 Ta=75°C DC Current Gain, hFE 12 10 8 6 Ta= 75° 25°C C --25 °C Collector Current, IC -- A 30mA 6 0 2.0 VCE=2V 4 0 0.2 0.4 0.6 0.8 1.0 3 =2 0.7V 7 V 1.0V V 0.2V 0.5 100 5 3 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 100 7 5 3 2 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 3 5 7 10 7 IT10580 2 3 IT10577 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT10579 VCE(sat) -- IC IC / IB=20 5 3 3 2 Collector Current, IC -- A f=1MHz 2 5 7 1.0 VCE=10V 7 7 3 f T -- IC IT10578 5 10 0.1 2 5 10 0.01 3 Cob -- VCB 1000 5 7 0.1 7 .0 2 2 3 Collector Current, IC -- A Gain-Bandwidth Product, f T -- MHz V CE 5 7 0.1 2 1000 5 3 7 5 IT10576 Ta=25°C 2 100 10 0.01 1.2 hFE -- IC 7 10 0.01 25°C --25°C 2 2 Base-to-Emitter Voltage, VBE -- V 1000 3 3 2 DC Current Gain, hFE 7 IT10574 IC -- VBE 16 Output Capacitance, Cob -- pF 8 1 1 0 0 mA 80 mA 90 mA 50mA 40mA 40mA 70 12 A 50m 60m A Collector Current, IC -- A 13 9 100 mA 14 IC -- VCE 10 From a top 300mA 250mA 200mA 180mA 150mA 120mA 100mA Collector Current, IC -- A 15 3 2 0.1 7 5 C 5° 3 =7 Ta 2 °C 25 0.01 7 5 0.01 C 5° --2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 2 3 IT10581 No. A0279-3/7 2SC6082 VCE(sat) -- IC 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 0.1 7 °C 75 5 --2 5° C = Ta 3 °C 25 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A ICP=20A Ta= --25°C 7 75°C 5 25°C 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- A PC -- Ta 2.5 2 3 IT10583 100ms DC IC=15A 10 ms op era 1m n s 0μ tio s S/ B 1.0 7 5 3 2 it m Li 0.1 7 5 3 2 1.0 2 0.01 3 0 =5 PT 10 7 5 3 2 2 IT10582 Forward Bias A S O 100 7 5 3 2 2 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=20 IC / IB=50 5 Collector Current, IC -- A VBE(sat) -- IC 3 2.0 1.5 1.0 0.5 Tc=25°C 0.01 Single pulse 2 3 5 7 1.0 0.1 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V PC -- Tc 25 5 7 100 IT16709 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16710 Collector Dissipation, PC -- W 23 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16711 No. A0279-4/7 2SC6082 Magazine Specification 2SC6082-1E No. A0279-5/7 2SC6082 Outline Drawing 2SC6082-1E Mass (g) Unit 1.8 mm * For reference No. A0279-6/7 2SC6082 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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