2SC6096-TD-E

Ordering number : ENA0434A 2SC6096 Bipolar Transistor 100V, 2A, Low VCE(sat), NPN Single PCP http://onsemi.com Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage High allowable power dissipation • • • • • • Large current capacity High-speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCES 120 V 120 V VCEO 100 V 6.5 V Collector Current VEBO IC 2 A Collector Current (Pulse) ICP 3 A Collector-to-Emitter Voltage Emitter-to-Base Voltage Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel 1.6 2.5 1.0 1 2 Packing Type: TD 4.0 1.5 2SC6096-TD-E 2SC6096-TD-H TD Marking LOT No. 4.5 QG Top View 3 0.4 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 PCP Semiconductor Components Industries, LLC, 2013 September, 2013 82912 TKIM/62006EA MSIM TB-00002425 No. A0434-1/6 2SC6096 Continued from preceding page. Parameter Symbol Base Current Conditions Ratings IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Unit 400 mA When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage VCE=5V, IC=100mA Base-to-Emitter Saturation Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO ton Turn-ON Time Storage Time tstg tf Fall Time Unit max 300 1 μA 1 μA 600 300 VCB=10V, f=1MHz IC=1A, IB=100mA V(BR)CBO V(BR)CES Collector-to-Emitter Breakdown Voltage typ VCE=10V, IC=300mA VCE(sat) VBE(sat) Collector-to-Base Breakdown Voltage min VCB=80V, IE=0A VEB=4V, IC=0A fT Cob Output Capacitance Ratings Conditions MHz 13 pF 100 150 mV 0.85 1.2 V IC=1A, IB=100mA IC=10μA, IE=0A 120 V IC=100μA, RBE=0Ω 120 V IC=1mA, RBE=∞ IE=10μA, IC=0A 100 V 6.5 V See specified Test Circuit. 40 ns 1100 ns 40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR10 RB RL 50Ω + 470μF + 100μF VBE= --5V VCC=50V IC=10IB1= --10IB2=0.5A Ordering Information Package Shipping memo 2SC6096-TD-E PCP 1,000pcs./reel Pb Free 2SC6096-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free IC -- VCE 60mA 40mA Collector Current, IC -- A 1.6 1.4 1.2 20mA 1.0 10mA 0.8 5mA 0.6 2mA 0.4 VCE=5V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 --25°C mA 80mA 100 Collector Current, IC -- A 1.8 IC -- VBE 2.0 25°C 2.0 Ta=75 °C Device 0.2 IB=0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 1.0 IT11115 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT11116 No. A0434-2/6 2SC6096 hFE -- IC 1000 7 Gain-Bandwidth Product, f T -- MHz Ta=75°C DC Current Gain, hFE 5 25°C --25°C 3 2 100 7 5 3 2 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 2 100 7 5 3 2 3 5 7 2 0.1 3 5 7 Collector Current, IC -- A IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 10 7 5 2 1.0 IT11118 VCE(sat) -- IC 3 f=1MHz Output Capacitance, Cob -- pF 3 IT11117 7 0.1 7 5 °C 75 Ta= 3 2 5°C --2 C 25° 0.01 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 3 0.01 5 7 100 IT11119 Collector-to-Base Voltage, VCB -- V Collector Current, IC -- A IC=2A 1.0 7 5 3 2 0.1 7 5 3 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 5 7 1.0 2 3 3 IT11120