Ordering number : ENA0434A
2SC6096
Bipolar Transistor
100V, 2A, Low VCE(sat), NPN Single PCP
http://onsemi.com
Applicaitons
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
•
Features
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
•
•
•
•
•
•
Large current capacity
High-speed switching
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCES
120
V
120
V
VCEO
100
V
6.5
V
Collector Current
VEBO
IC
2
A
Collector Current (Pulse)
ICP
3
A
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
1.6
2.5
1.0
1
2
Packing Type: TD
4.0
1.5
2SC6096-TD-E
2SC6096-TD-H
TD
Marking
LOT No.
4.5
QG
Top View
3
0.4
0.4
0.5
1.5
3.0
Electrical Connection
2
0.75
1
1 : Base
2 : Collector
3 : Emitter
Bottom View
3
PCP
Semiconductor Components Industries, LLC, 2013
September, 2013
82912 TKIM/62006EA MSIM TB-00002425 No. A0434-1/6
2SC6096
Continued from preceding page.
Parameter
Symbol
Base Current
Conditions
Ratings
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Unit
400
mA
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
VCE=5V, IC=100mA
Base-to-Emitter Saturation Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
ton
Turn-ON Time
Storage Time
tstg
tf
Fall Time
Unit
max
300
1
μA
1
μA
600
300
VCB=10V, f=1MHz
IC=1A, IB=100mA
V(BR)CBO
V(BR)CES
Collector-to-Emitter Breakdown Voltage
typ
VCE=10V, IC=300mA
VCE(sat)
VBE(sat)
Collector-to-Base Breakdown Voltage
min
VCB=80V, IE=0A
VEB=4V, IC=0A
fT
Cob
Output Capacitance
Ratings
Conditions
MHz
13
pF
100
150
mV
0.85
1.2
V
IC=1A, IB=100mA
IC=10μA, IE=0A
120
V
IC=100μA, RBE=0Ω
120
V
IC=1mA, RBE=∞
IE=10μA, IC=0A
100
V
6.5
V
See specified Test Circuit.
40
ns
1100
ns
40
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR10
RB
RL
50Ω
+
470μF
+
100μF
VBE= --5V
VCC=50V
IC=10IB1= --10IB2=0.5A
Ordering Information
Package
Shipping
memo
2SC6096-TD-E
PCP
1,000pcs./reel
Pb Free
2SC6096-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
IC -- VCE
60mA
40mA
Collector Current, IC -- A
1.6
1.4
1.2
20mA
1.0
10mA
0.8
5mA
0.6
2mA
0.4
VCE=5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
--25°C
mA
80mA
100
Collector Current, IC -- A
1.8
IC -- VBE
2.0
25°C
2.0
Ta=75
°C
Device
0.2
IB=0mA
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Collector-to-Emitter Voltage, VCE -- V
0.9
1.0
IT11115
0
0
0.2
0.4
0.6
0.8
Base-to-Emitter Voltage, VBE -- V
1.0
1.2
IT11116
No. A0434-2/6
2SC6096
hFE -- IC
1000
7
Gain-Bandwidth Product, f T -- MHz
Ta=75°C
DC Current Gain, hFE
5
25°C
--25°C
3
2
100
7
5
3
2
0.01
2
3
5
7
2
0.1
3
5
7
2
1.0
Collector Current, IC -- A
2
100
7
5
3
2
3
5
7
2
0.1
3
5
7
Collector Current, IC -- A
IC / IB=10
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
10
7
5
2
1.0
IT11118
VCE(sat) -- IC
3
f=1MHz
Output Capacitance, Cob -- pF
3
IT11117
7
0.1
7
5
°C
75
Ta=
3
2
5°C
--2
C
25°
0.01
7
5
3
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
3
0.01
5 7 100
IT11119
Collector-to-Base Voltage, VCB -- V
Collector Current, IC -- A
IC=2A
1.0
7
5
3
2
0.1
7
5
3
2
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC -- A
5
7 1.0
2
3
3
IT11120
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