Ordering number : ENA0413A
2SC6098
Bipolar Transistor
http://onsemi.com
80V, 2.5A, Low VCE(sat), NPN Single TP/TP-FA
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
•
•
•
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
•
•
Large current capacity
High-speed switching
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCES
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Unit
120
V
120
V
VCEO
80
V
VEBO
6.5
V
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7518-003
7003-003
0.5
0.6
1
2
2.3
7.5
0.5
3
2.3
0.6
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1
2
2.5
0.8
0.8
1.6
0.85
1.2
1.2
5.5
0.85
0.7
3
0 to 0.2
1.2
2.3
2SC6098-TL-E
0.5
1.5
1.5
4
7.0
5.5
4
2.3
6.5
5.0
2SC6098-E
0.5
7.0
2.3
6.5
5.0
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
C6098
1
LOT No.
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/53006EA MSIM TB-00002377 No. A0413-1/9
2SC6098
Continued from preceding page.
Parameter
Symbol
Collector Current
Conditions
Ratings
Unit
2.5
Collector Current (Pulse)
IC
ICP
Base Current
IB
500
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
4
Tc=25°C
A
A
mA
0.8
W
15
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Ratings
min
typ
VCE=5V, IC=100mA
300
VCE=10V, IC=500mA
VCE(sat)1
VCE(sat)2
Unit
max
VCB=70V, IE=0A
VEB=4V, IC=0A
fT
Cob
Output Capacitance
Conditions
1
μA
1
μA
600
350
VCB=10V, f=1MHz
IC=1A, IB=50mA
MHz
14
IC=1A, IB=100mA
IC=1A, IB=100mA
pF
110
165
mV
100
150
mV
0.9
1.2
V
VBE(sat)
V(BR)CBO
IC=10μA, IE=0A
120
V
V(BR)CES
IC=100μA, RBE=0Ω
120
V
V(BR)CEO
IC=1mA, RBE=∞
80
V
V(BR)EBO
ton
IE=10μA, IC=0A
6.5
tstg
tf
See specified Test Circuit.
V
40
ns
920
ns
32
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR10
RB
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=40V
IC=10IB1= --10IB2=0.5A
Ordering Information
Device
2SC6098-E
2SC6098-TL-E
Package
Shipping
TP
500pcs./bag
TP-FA
700pcs./reel
memo
Pb Free
No. A0413-2/9
2SC6098
IC -- VCE
2.0
VCE=5V
2mA
1mA
0.4
0.5
IB=0mA
0
0
0.2
0.4
0.6
0.8
0
0
1.0
Collector-to-Emitter Voltage, VCE -- V
DC Current Gain, hFE
Gain-Bandwidth Product, f T -- MHz
Ta=75°C
25°C
--25°C
100
7
5
2
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC -- A
3
1.0
VCE=10V
3
2
100
7
5
3
2
2
3
5
7 0.1
2
3
5
7 1.0
IC / IB=10
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
3
2
10
7
5
3
IT11061
VCE(sat) -- IC
5
5
2
Collector Current, IC -- A
IT11060
7
1.2
IT11059
5
10
0.01
5
Cob -- VCB
100
0.8
7
2
3
0.01
0.6
f T -- IC
1000
7
3
0.4
Base-to-Emitter Voltage, VBE -- V
VCE=5V
5
0.2
IT11058
hFE -- IC
1000
1.0
--25°C
5mA
0.8
1.5
C
25°C
10mA
2.0
Ta=7
5°
80mA
20mA
A
1.2
Collector Current, IC -- A
60mA
40mA
100m
Collector Current, IC -- A
1.6
IC -- VBE
2.5
3
2
0.1
7
°C
75
5
=
Ta
3
5
--2
2
°C
°C
25
0.01
7
5
3
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
3
0.01
5 7 100
IT11062
Collector-to-Base Voltage, VCB -- V
3
5
7 0.1
2
3
5
7 1.0
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
0.1
7
°C
75
5
=
Ta
3
°C
25
--
2
°C
25
5
IC / IB=10
IC / IB=20
2
3
IT11063
VBE(sat) -- IC
3
3
2
Collector Current, IC -- A
VCE(sat) -- IC
5
2
2
1.0
Ta= --25°C
7
75°C
25°C
5
3
0.01
7
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
IT11064
2
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
IT11065
No. A0413-3/9
2SC6098
ASO
ICP=4A
10
Op
2
0m
s
s
ati
on
0.1
7
5
m
0μ
s
s
10
1.0
7
5
0m
s
3
2
0.1
7
5
3
3
Ta=25°C
Single Pulse
2
0.01
0.1
2
3
Tc=25°C
Single Pulse
2
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
0.01
0.1
5 7 100
IT11066
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
0.9
5 7 100
IT11067
PC -- Tc
17.5
0.8
15.0
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
10
n
tio
era
Op
er
3
1m
3
2
s
DC
0μ
s
s
1m
1.0
7
5
m