2SC6099-TL-E

Ordering number : ENA0435A 2SC6099 Bipolar Transistor http://onsemi.com 100V, 2A, Low VCE(sat), NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • • • Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage High allowable power dissipation Large current capacity High-speed switching • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCES Collector-to-Emitter Voltage Collector-to-Emitter Voltage VCEO VEBO IC Emitter-to-Base Voltage Collector Current Collector Current (Pulse) ICP IB Base Current Unit 120 V 120 V 100 V 6.5 V 2 A 3 400 A mA Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 0.6 1 2 2.3 7.5 0.5 3 2.3 0.6 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1 2 2.5 0.8 0.8 1.6 0.85 1.2 1.2 5.5 0.85 0.7 3 0 to 0.2 1.2 2.3 2SC6099-TL-E 0.5 1.5 1.5 4 7.0 5.5 4 2.3 6.5 5.0 2SC6099-E 0.5 7.0 2.3 6.5 5.0 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 C6099 1 LOT No. TL 3 Semiconductor Components Industries, LLC, 2013 September, 2013 80812 TKIM/62006EA MSIM TB-00002424 No. A0435-1/9 2SC6099 Continued from preceding page. Parameter Symbol Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Tc=25°C Unit 0.8 W 15 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings min typ VCE=5V, IC=100mA 300 VCE=10V, IC=300mA VCE(sat) VBE(sat) Unit max VCB=80V, IE=0A VEB=4V, IC=0A fT Cob Output Capacitance Conditions 1 μA 1 μA 600 300 VCB=10V, f=1MHz IC=1A, IB=100mA MHz 13 pF 110 165 mV 0.9 1.2 V IC=1A, IB=100mA IC=10μA, IE=0A 120 V IC=100μA, RBE=0Ω 120 V V(BR)CEO V(BR)EBO ton IC=1mA, RBE=∞ IE=10μA, IC=0A 100 V tstg tf See specified Test Circuit. V(BR)CBO V(BR)CES 6.5 V 40 ns 1100 ns 40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR10 RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=50V IC=10IB1= --10IB2=0.5A Ordering Information Device 2SC6099-E 2SC6099-TL-E Package Shipping TP 500pcs./bag TP-FA 700pcs./reel memo Pb Free No. A0435-2/9 2SC6099 IC -- VCE A 1.4 20mA 1.2 1.0 10mA 0.8 5mA 0.6 2mA 0.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE -- V 1.0 0.8 0.6 0 0 1.0 Gain-Bandwidth Product, f T -- MHz Ta=75°C 25°C --25°C 2 100 7 5 3 2 0.01 2 3 5 7 2 0.1 3 5 7 1.0 Collector Current, IC -- A 2 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 10 7 5 100 7 5 3 2 3 5 7 2 0.1 3 5 7 2 1.0 IT11118 VCE(sat) -- IC IC / IB=10 0.1 7 5 °C 75 Ta= 3 5 --2 2 °C C 25° 0.01 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 3 0.01 5 7 100 IT11119 Collector Current, IC -- A 7 25°C 5 2 3 5 7 0.1 75°C 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT11121 5 7 0.1 2 3 5 7 1.0 2 ICP=3A