2SC6144
Ordering number : ENA1149
SANYO Semiconductors
DATA SHEET
2SC6144
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
•
Relay drivers, lamp drivers, motor drivers.
Features
•
•
•
•
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
60
V
Collector-to-Emitter Voltage
VCBO
VCEO
50
V
Emitter-to-Base Voltage
VEBO
5
V
IC
10
A
ICP
13
A
IB
2
A
2
W
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
25
W
150
°C
--55 to +150
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32608FA TI IM TC-00001285 No. A1149-1/4
2SC6144
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
VCB=40V, IE=0A
VEB=4V, IC=0A
DC Current Gain
hFE
Gain-Bandwidth Product
fT
Cob
VCE=2V, IC=270mA
VCE=10V, IC=3A
Output Capacitance
Collector-to-Emitter Saturation Voltage
typ
Unit
max
200
10
μA
10
μA
560
330
MHz
60
pF
180
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=6A, IB=300mA
IC=100μA, IE=0A
IC=1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V(BR)EBO
ton
IE=100μA, IC=0A
See specified Test Circuit.
Storage Time
tstg
tf
Fall Time
min
VCB=10V, f=1MHz
IC=6A, IB=300mA
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
Conditions
360
1.2
mV
V
60
V
50
V
5
V
62
ns
See specified Test Circuit.
350
ns
See specified Test Circuit.
25
ns
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7508-002
4.5
10.0
OUTPUT
IB2
2.8
3.2
INPUT
VR
RB
+
16.0
50Ω
+
18.1
100μF
14.0
2.55
SANYO : TO-220ML
40mA
8
7
4.5
25mA
4.0
20mA
45mA
6
30mA
50mA
15mA
5
10mA
4
3
5m A
2
3.5
A
18m A
16m
25
mA
mA
60
Collector Current, IC -- A
100m
A
80
mA
9
IC -- VCE
5.0
35mA
40mA 35mA
5.6
2.4
1 : Base
2 : Collector
3 : Emitter
IC -- VCE
10
VCC=20V
IC=20IB1= --20IB2=5A
0.7
1 2 3
2.55
470μF
VBE= --5V
1.6
1.2
0.75
Collector Current, IC -- A
RL
7.2
3.5
IB1
PW=20μs
D.C.≤1%
14mA
12mA
10mA
A
2 0m
3.0
8mA
A
30m
2.5
6mA
2.0
4m A
1.5
1.0
1
2m A
0.5
IB=0mA
0
0
1
2
3
4
Collector-to-Emitter Voltage, VCE -- V
IB=0mA
0
5
IT13454
0
0.5
1.0
1.5
2.0
Collector-to-Emitter Voltage, VCE -- V
IT13455
No. A1149-2/4
2SC6144
IC -- VBE
25
hFE -- IC
7
VCE=2V
VCE=2V
Ta=75°C
DC Current Gain, hFE
20
15
25°
C --25
°C
10
0.5
0
Gain-Bandwidth Product, fT -- MHz
0.7V
1.0V
DC Current Gain, hFE
0V
V
0.5
100
7
5
2 3
5 7 1.0
2 3
5 7 10
2 3
Collector Current, IC -- A
7
5
3
3
5 7 1.0
2
3
5
7 10
2
3
Collector-to-Base Voltage, VCB -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
5
7
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT13459
VCE(sat) -- IC
IC / IB=20
5
3
2
0.1
7
5
75
°C
=
Ta
3
2
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
IT13461
VBE(sat) -- IC
3
IC / IB=20
5
3
2
0.1
7
C
C
5°
5°
=7
a
--2
T
5
3
°C
25
2
3
3
Collector Current, IC -- A
VCE(sat) -- IC
2
5
IT13460
IC / IB=50
0.01
0.01
7
7
5
0.01
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
1.0
100
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
100
5
IT13457
2
7
2
2 3
3
1.0
3
2
5 7 10
VCE=10V
IT13458
f=1MHz
2
0.1
2 3
fT -- IC
10
0.01
5
Cob -- VCB
5
5 7 1.0
5
=2.
V CE
0.
5 7 0.1
2 3
7
3
2 3
5 7 0.1
Collector Current, IC -- A
Ta=25°C
3
0.01
2 3
IT13456
hFE -- IC
2V
7
3
0.01
1.5
Base-to-Emitter Voltage, VBE -- V
2
100
5
1.0
5
--25°C
25
°C
0
25°C
2
5°
C
Ta
=
5
3
--2
75
°C
Collector Current, IC -- A
5
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10
2
3
IT13462
2
1.0
Ta= --25°C
7
25°C
75°C
5
3
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10
2
3
IT13463
No. A1149-3/4
2SC6144
Forward Bias A S O
IC=10A
10
0m
s
ms
n
10
tio
era
op
DC
3
2
Collector Dissipation, PC -- W
ICP=13A
1.0
7
5
3
2
0.1
7
5
3
2
Tc=25°C
Single pulse
0.01
0.1
2
3
2.0
1.5
No
he
at
sin
k
1.0
0.5
0
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 100
IT13464
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT13452
PC -- Tc
30
Collector Dissipation, PC -- W
PC -- Ta
2.5
μs
00
=5
PT
10
7
5
s
1m
Collector Current, IC -- A
3
2
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT13453
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1149-4/4
