2SD1060R-1EX

Ordering number : EN686K 2SD1060 Bipolar Transistor 50V, 5A, Low VCE(sat) NPN TO-220-3L http://onsemi.com Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 60 V 50 V 6 V 5 A 9 A 1.75 W 30 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7536-002 • Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine 4.5 3.6 2.8 (1.7) 1.3 10.0 Marking 1.3 Electrical Connection 2 9.2 8.9 MAX 13.3 15.7 (0.6) D1060 1 Rank LOT No. 1.27 0.8 3 13.08 3.0 1.52 0.5 2.4 1 2 3 2.54 1 : Base 2 : Collector 3 : Emitter 2.54 TO-220-3L Semiconductor Components Industries, LLC, 2013 September, 2013 40412 TKIM TC-00002737/82207FA TIIM TC-00000844/913003TN(KT)/91098HA(KT)/D251MH/4017KI No.686-1/4 2SD1060 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time min typ ICBO IEBO VCB=40V, IE=0A VEB=4V, IC=0A hFE1 VCE=2V, IC=1A 100* hFE2 VCE=2V, IC=2A 80 fT Cob VCE=5V, IC=1A Unit max 0.1 mA 0.1 mA 280* 30 VCB=10V, f=1MHz IC=3A, IB=0.3A VCE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Ratings Conditions MHz 100 pF 0.3 V IC=1mA, IE=0A 60 V(BR)CEO V(BR)EBO ton IC=1mA, RBE=∞ 50 V 6 V tstg tf See specified Test Circuit IE=1mA, IC=0A V 0.1 μs 1.4 μs 0.2 μs * : The 2SD1060 is classified by 1A hFE as follows Rank R S hFE 100 to 200 140 to 280 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR RL= 10Ω 50Ω + 100μF + 470μF VBE= --5V VCC=20V IC=10IB1= --10IB2=2A IC -- VCE VCE=2V 9 100mA 6 50mA 4 2 8 7 6 5 4 3 --20°C Collector Current, IC -- A 150mA Ta=8 0°C 25°C mA 45 8 IC -- VBE 10 A A 0m 0m mA A 40 35 300 250m 200mA 500 Collector Current, IC -- A 0m A 10 2 1 0 IB=0mA 0 0.4 0.8 1.2 1.6 2.0 Collector-to-Emitter Voltage, VCE -- V 2.4 ITR08436 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR08438 No.686-2/4 2SD1060 hFE -- IC 1000 7 3 Ta=80°C 2 25°C --20°C 100 7 5 3 2 10 0.01 2 3 5 0.1 2 3 5 2 1.0 3 5 Collector Current, IC -- A VCE(sat) -- IC 10 5 3 2 °C 25 0.1 0°C Ta=8 --20°C 5 3 2 0.01 2 3 5 2 0.1 3 5 2 1.0 3 5 ASO s 1m ms 10 2 DC op 1.0 tio era 7 n Collector Current, IC -- A s 3 5 3 2 0.1 °C 0°C 8 Ta= 3 2 C --20° 2 3 5 2 0.1 3 5 2 1.0 3 5 2 10 ITR08442 5 2 10 ITR08446 VBE(sat) -- IC 5 3 2 1.0 IC / IB=10 7 IC / IB=20 5 2 3 5 2 0.1 3 5 2 1.0 3 Collector Current, IC -- A PC -- Ta 2.0 0m IC=5A 5 25 5 2 2 10 ITR08444 10 7 0.1 7 ICP=9A 10 3 2 3 Collector Current, IC -- A 2 5 10 Base-to-Emitter Saturation Voltage, VCE(sat) -- V 1.0 1.0 Collector Current, IC -- A Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 3 2 0.01 2 10 ITR08440 IC / IB=20 5 IC / IB=10 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V DC Current Gain, hFE 5 VCE(sat) -- IC 10 VCE=2V 1.8 1.75 1.6 1.4 No 1.2 he at 1.0 sin k 0.8 0.6 0.4 0.2 1ms to 100ms : Single pulse 5 7 1.0 2 3 5 7 2 10 3 Collector-to-Emitter Voltage, VCE -- PC -- Tc 35 5 0 7 100 V ITR08448 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12873 Collector Dissipation, PC -- W 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 ITR08449 No.686-3/4 2SD1060 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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