2SD1623T-TD-E

Ordering number : EN1727F 2SB1123/2SD1623 Bipolar Transistor http://onsemi.com (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • • • Low collector-to-emitter saturation voltage Adoption of FBET, MBIT processes • Fast switching speed Large current capacity and wide ASO The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit (--)60 V (--)50 V (--)6 V (--)2 A (--)4 A Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 2.5 1.0 1 2 Packing Type: TD 4.0 1.5 2SB1123S-TD-E 2SB1123T-TD-E 2SD1623S-TD-E 2SD1623T-TD-E TD 3 Marking 0.4 3.0 RANK RANK 2SB1123 0.75 LOT No. BF 1.5 DF 0.5 LOT No. 0.4 2SD1623 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View PCP 1 2 1 3 2SB1123 3 2SD1623 Semiconductor Components Industries, LLC, 2013 September, 2013 82212 TKIM/31010EA TKIM/N1501 TSIM/92098 HA (KT)/4107 KI/N275 KI/3045 MW, TS No.1727-1/8 2SB1123 / 2SD1623 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 0.5 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) W 1.3 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time typ max Unit VCB=(--)50V, IE=0A (--)100 nA VEB=(--)4V, IC=0A (--)100 nA VCE=(--)2V, IC=(--)100mA 100* VCE=(--)2V, IC=(--)1.5A VCE=(--)10V, IC=(--)50mA 40 560* 150 MHz (22)12 pF (--0.3)0.15 (--0.7)0.4 V (--)0.9 (--)1.2 V IC=(--)1A, IB=(--)50mA IC=(--)10μA, IE=0A (--)60 V IC=(--)1mA, RBE=∞ (--)50 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage min VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions V (60)60 ns (450)550 ns (30)30 ns * : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit PW=20μs D.C.≤1% INPUT IB1 RB OUTPUT IB2 RL=50Ω VR 50Ω + 100μF --5V + 470μF 25V IC=10IB1= --10IB2=500mA (For PNP, the polarity is reversed) Ordering Information Package Shipping 2SB1123S-TD-E Device PCP 1,000pcs./reel 2SB1123T-TD-E PCP 1,000pcs./reel 2SD1623S-TD-E PCP 1,000pcs./reel 2SD1623T-TD-E PCP 1,000pcs./reel memo Pb Free No.1727-2/8 2SB1123 / 2SD1623 IC -- VCE --2.4 Collector Current, IC -- A A m --20 --1.6 --10mA --1.2 --8mA --6mA --0.8 --4mA --2mA --0.4 --0.4 --0.8 --1.2 --1.6 --2.0 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA --1000 1.2 8mA 0.8 4mA 2mA IB=0mA 0 0.4 --4mA --3mA --2mA --400 --1mA 1.2 1.6 2.0 --200 2SD1623 Pulse 7mA 6mA 5mA 800 4mA 600 3mA 2mA 400 1mA 200 IB=0mA 0 0 --2 --4 --6 --8 --10 0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE -- V ITR08893 IC -- VBE --1200 IB=0mA 0 --12 Collector-to-Emitter Voltage, VCE -- V 2SD1623 VCE=2V 1000 Collector Current, IC -- mA --1000 Collector Current, IC -- mA 12 ITR08894 IC -- VBE 1200 2SB1123 VCE= --2V --800 --600 --400 --200 800 600 400 200 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 0 0.6 0.8 3 3 DC Current Gain, hFE 5 100 7 5 1.2 ITR08896 2SD1623 VCE=2V 7 2 1.0 hFE -- IC 1000 5 2 100 7 5 3 3 2 2 10 --10 0.4 Base-to-Emitter Voltage, VBE -- V 2SB1123 VCE= --2V 7 0.2 ITR08895 hFE -- IC 1000 DC Current Gain, hFE 2.4 ITR08892 IC -- VCE 1200 1000 --600 0.8 Collector-to-Emitter Voltage, VCE -- V ITR08891 --5mA --800 15mA 0 2SB1123 Pulse --7mA --6mA 1.6 --2.4 IC -- VCE --1200 25mA 0.4 IB=0mA 0 0 A 40m 2.0 A m 0 --5 2SD1623 Pulse A 50m Collector Current, IC -- mA Collector Current, IC -- A --2.0 IC -- VCE 2.4 2SB1123 Pulse 10 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 3 5 ITR08897 10 2 3 5 7 100 2 3 5 7 1000 Collector Current, IC -- mA 2 3 5 ITR08898 No.1727-3/8 2SB1123 / 2SD1623 f T -- IC 7 5 3 2 100 7 5 3 2 10 --10 3 5 7 --100 2 3 5 7 --1000 2 3 2 100 7 5 3 2 10 2 3 5 7 100 2 3 5 7 1000 2SD1623 f=1MHz Output Capacitance, Cob -- pF 7 7 5 3 2 10 3 ITR08900 Cob -- VCB 100 100 2 Collector Current, IC -- mA ITR08899 2SB1123 f=1MHz Output Capacitance, Cob -- pF 5 3 Cob -- VCB 2 5 3 2 10 7 7 5 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 5 1.0 7 --100 ITR08901 3 5 7 2 10 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 5 2 --1.0 5 2 --0.1 5 2 7 100 ITR08902 2SD1623 IC / IB=20 5 --10 5 VCE(sat) -- IC 100 2SB1123 IC / IB=20 5 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --100 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SD1623 VCB=10V 7 10 2 Collector Current, IC -- mA 2 10 5 2 1.0 5 2 0.1 5 2 --0.01 --10 0.01 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 3 10 2 3 5 7 2 100 3 5 7 1000 Collector Current, IC -- mA ITR08903 ASO 10 2 3 ITR08904 PC -- Ta 0.8 2SB1123 / 2SD1623 2SB1123 / 2SD1623 ICP=4A 1m 3 s IC=2A 2 Collector Dissipation, PC -- W 5 s ms 0m 1.0 10 10 Collector Current, IC -- A f T -- IC 1000 2SB1123 VCB=10V Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 1000 DC 5 op era tio 3 2 0.1 n Ta=25°C Single pulse For PNP, minus sign is omitted Mounted on a ceramic board (250mm2✕0.8mm) 5 3 2 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 0.6 0.5 0.4 No he at sin k 0.2 0 5 7 100 ITR08906 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04221 No.1727-4/8 2SB1123 / 2SD1623 PC -- Ta 1.6 2SB1123 / 2SD1623 Collector Dissipation, PC -- W 1.4 1.3 M 1.2 ou nte do na 1.0 ce ram ic 0.8 bo ard (2 0.6 50 mm 0.4 ✕0 2 0.2 .8m m) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04222 No.1727-5/8 2SB1123 / 2SD1623 Bag Packing Specification 2SB1123S-TD-E, 2SB1123T-TD-E, 2SD1623S-TD-E, 2SD1623T-TD-E No.1727-6/8 2SB1123 / 2SD1623 Outline Drawing Land Pattern Example 2SB1123S-TD-E, 2SB1123T-TD-E, 2SD1623S-TD-E, 2SD1623T-TD-E Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.1727-7/8 2SB1123 / 2SD1623 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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