2SD1802S-TL-E

Ordering number : EN2113E 2SB1202/2SD1802 Bipolar Transistor http://onsemi.com (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • • • Large current capacitance and wide ASO Adoption of FBET and MBIT processes • Fast switching speed Low collector to emitter saturation voltage Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller Specifications ( ): 2SB1202 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Conditions Ratings VCBO VCEO Collector to Emitter Voltage Emitter to Base Voltage Collector Current VEBO IC Collector Current (Pulse) ICP Unit (--)60 V (--)50 V (--)6 V (--)3 A (--)6 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 0.6 1 2 2.3 7.5 0.5 3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 0.6 1 2 2.5 0.8 0.8 1.6 0.85 1.2 1.2 0.85 0.7 2SB1202S-TL-E 2SB1202T-TL-E 2SD1802S-TL-E 2SD1802T-TL-E 0.5 1.5 4 5.5 5.5 4 2.3 6.5 5.0 2SB1202S-E 2SB1202T-E 2SD1802S-E 2SD1802T-E 7.0 1.5 0.5 7.0 2.3 6.5 5.0 3 0 to 0.2 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK • Minimum Packing Quantity : 500 pcs./bag Marking(TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL B1202 Electrical Connection 2,4 D1802 1 RANK LOT No. RANK LOT No. TL (For PNP, the polarity is reversed.) 3 Semiconductor Components Industries, LLC, 2013 September, 2013 92513 TKIM/82912 TKIM/42512EA TKIM/13004TN (KT)/92098HA (KT)/8259MO/4137KI/4116KI, TS No.2113-1/7 2SB1202/2SD1802 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 1 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C W 15 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-On Time Storage Time typ max Unit VCB=(--)40V, IE=0A (--)1 μA VEB=(--)4V, IC=0A (--)1 μA hFE1 VCE=(--)2V, IC=(--)100mA 100* hFE2 VCE=(--)2V, IC=(--)3A VCE=(--)10V, IC=(--)50mA 35 VCE(sat) VBE(sat) IC=(--)1mA, RBE=∞ IE=(--)10μA, IC=0A V(BR)EBO ton MHz (39)25 VCE=(--)2V, IC=(--)100mA IC=(--)10μA, IE=0A V(BR)CBO V(BR)CEO 560* 150 VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)100mA tstg tf Fall Time min ICBO IEBO fT Cob Output Capacitance Ratings Conditions (--0.7)0.5 (--)0.94 (--)1.2 mV V (--)60 V (--)50 V (--)6 See specified Test Circuit. pF (--0.35)0.19 V 70 ns (450)650 ns 35 ns * : The 2SB1202/2SD1802 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 25Ω 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. Ordering Information Package Shipping 2SB1202S-E Device TP 500pcs./bag 2SB1202T-E TP 500pcs./bag 2SD1802S-E TP 500pcs./bag 2SD1802T-E TP 500pcs./bag 2SB1202S-TL-E TP-FA 700pcs./reel 2SB1202T-TL-E TP-FA 700pcs./reel 2SD1802S-TL-E TP-FA 700pcs./reel 2SD1802T-TL-E TP-FA 700pcs./reel memo Pb Free No.2113-2/7 2SB1202/2SD1802 IC -- VCE mA mA --100 --50mA --3 --20mA --2 --10mA --5mA --1 --0.4 --0.8 --1.2 mA --14 5mA IB=0 0.4 0.8 1.2 1.6 Collector Current, IC -- A --4mA --2mA 2.0 Collector to Emitter Voltage, VCE -- V ITR09163 IC -- VCE 2SD1802 8mA --6mA --0.8 10mA 2 2.0 --8mA --1.2 20mA ITR09162 A --10m --1.6 3 0 2SB1202 A --12m 40mA --2.0 IC -- VCE --2.0 4 0 --1.6 Collector to Emitter Voltage, VCE -- V A 100m 80mA 60mA 1 IB=0 0 Collector Current, IC -- A 2SD1802 --200 --4 0 IC -- VCE 5 2SB1202 Collector Current, IC -- A Collector Current, IC -- A --5 7mA 1.6 6mA 5mA 1.2 4mA 0.8 3mA 2mA 0.4 --0.4 1mA IB=0 0 --4 --8 --12 Collector to Emitter Voltage, VCE -- V 0 Ta=7 5°C 25°C --25° C --2.0 --0.8 --0.4 16 20 ITR09165 IC -- VBE 2SD1802 VCE=2V 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base to Emitter Voltage, VBE -- V 0 --1.2 0.2 0.4 0.8 1.0 1.2 ITR09167 hFE -- IC 1000 2SB1202 VCE= --2V 7 0.6 Base to Emitter Voltage, VBE -- V ITR09166 hFE -- IC 1000 2SD1802 VCE=2V 7 5 3 Ta=75°C 2 25°C DC Current Gain, hFE 5 DC Current Gain, hFE 12 3.2 Collector Current, IC -- A --2.4 --1.2 8 3.6 --2.8 --1.6 4 Collector to Emitter Voltage, VCE -- V ITR09164 2SB1202 VCE= --2V --3.2 Collector Current, IC -- A --20 IC -- VBE --3.6 IB=0 0 --16 Ta= 75° C 25°C --25° C 0 --25°C 3 100 100 7 7 5 Ta=75°C 25°C --25°C 2 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 ITR09168 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 ITR09169 No.2113-3/7 2SB1202/2SD1802 f T -- IC 2SB1202 VCE= --10V Gain-Bandwidth Product, f T -- MHz 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 100 7 5 3 2 3 5 5 3 2 2 3 5 7 2 0.1 3 5 7 2 1.0 3 ITR09171 Cob -- VCB 5 2SD1802 f=1MHz 3 7 2 --10 3 5 7 --100 ITR09172 2 100 7 5 3 2 Collector to Emitter Saturation Voltage, VCE(sat) -- mV 3 2 25 7 °C C 25° C 75° 5 -Ta= 3 3 5 2 7 2 10 3 5 Collector to Base Voltage, VCB -- V 7 100 ITR09173 VCE(sat) -- IC 1000 2SB1202 IC / IB=20 --100 2 1.0 VCE(sat) -- IC --1000 Collector to Emitter Saturation Voltage, VCE(sat) -- mV 7 10 2 Collector to Base Voltage, VCB -- V 2SD1802 IC / IB=20 7 5 3 2 100 7 25 5 °C 5°C --2 Ta= 3 75°C 2 10 --10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 5 7 0.01 Base to Emitter Saturation Voltage, VBE(sat) -- V 3 2 Ta= --25°C 25°C 7 75°C 5 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 3 2 3 5 ITR09175 VBE(sat) -- IC 2SD1667 2SD1802 IC / IB=20 7 5 --1.0 3 10 2SB1202 IC / IB=20 7 2 ITR09174 VBE(sat) -- IC --10 Base to Emitter Saturation Voltage, VBE(sat) -- V 100 Collector Current, IC -- A Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2 5 3 2 ITR09170 3 7 5 10 0.01 3 2SB1202 f=1MHz 10 --1.0 2SD1802 VCE=10V 7 Cob -- VCB 5 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 1000 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 ITR09176 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 ITR09177 No.2113-4/7 2SB1202/2SD1802 5 IC=3A 100ms 2 op era tio 3 2 nT a= 2 °C 25 c= nT tio 5 ms 10 DC era op 1.0 5° C 0.1 5 Tc=25°C Single pulse For PNP, the minus sign is omitted. 3 2 0.01 3 5 7 1.0 2 3 5 7 10 PC -- Ta 16 2SB1202 / 2SD1802 1m s DC Collector Current, IC -- A 3 ASO ICP=6A 2SB1202 / 2SD1802 15 14 Collector Dissipation, PC -- W 10 12 Id ea lh ea td iss ip at io n 10 8 6 4 2 No heat sink 1 0 2 3 Collector to Emitter Voltage, VCE -- V 5 7 100 ITR09178 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09179 No.2113-5/7 2SB1202/2SD1802 Outline Drawing Land Pattern Example 2SB1202S-TL-E, 2SB1202T-TL-E, 2SD1802S-TL-E, 2SD1802T-TL-E Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2113-6/7 2SB1202/2SD1802 Outline Drawing 2SB1202S-E, 2SB1202T-E, 2SD1802S-E, 2SD1802T-E Mass (g) Unit 0.315 mm * For reference ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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