2SD1803S-TL-E

Bipolar Transistor (−)50 V, (−)5 A, Low VCE(sat), (PNP)NPN Single TP/TP−FA 2SB1203/2SD1803 Features • Low Collector−to−Emitter Saturation Voltage • Excellent Linearity of hFE • Small and Slim Package Making It Easy to Make • • www.onsemi.com ELETRICAL CONNECTION 2SB1203/2SD1803−Applied Sets Smaller High Current and High fT Fast Switching Speed 2.4 1 2.4 1 Applications • Relay Drivers, High−Speed Inverters, Converters, and Other General High−Current Switching Applications 3 2SB1203 3 2SD1803 ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C) Symbol Parameter Condition Rating Unit VCBO Collector−to−Base Voltage (−)60 V VCEO Collector−to−Emitter Voltage (−)50 V VEBO Emitter−to−Base Voltage (−)6 V IC Collector Current (−)5 A ICP Collector Current (Pulse) (−)8 A PC Collector Dissipation 1 W 20 W Tc = 25°C Tj Junction Temperature 150 °C Tstg Storage Temperature −55 to +150 °C IPAK / TP CASE 369AJ DPAK / TP−FA CASE 369AH MARKING DIAGRAM B1203 D1803 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2013 May, 2021 − Rev. 2 1 Publication Order Number: 2SD1803/D 2SB1203/2SD1803 ELECTRICAL CHARACTERISTICS (at TA = 25°C) Symbol Max Unit ICBO Collector Cutoff Current Parameter VCB = (−)40 V, IE = 0 A Conditions (−)1 mA IEBO Emitter Cutoff Current VEB = (−)4 V, IC = 0 A (−)1 mA hFE1 DC Current Gain VCE = (−)2 V, IC = (−)0.5 A 70 (Note 1) VCE = (−)2 V, IC = (−)4 A 35 hFE2 fT Min Typ 400 (Note 1) Gain−Bandwidth Product VCE = (−)5 V, IC = (−)1 A (130)180 MHz Output Capacitance VCB = (−)10 V, f = 1 MHz (60)40 pF VCE(sat) Collector−to−Emitter Saturation Voltage IC = (−)3 A, IB = (−)0.15 A (−280)220 (−550)400 mV VBE(sat) Base−to−Emitter Saturation Voltage IC = (−)3 A, IB = (−)0.15 A (−)0.95 (−)1.3 V Cob V(BR)CBO Collector−to−Base Breakdown Voltage IC = (−)10 mA, IE = 0 A (−)60 V V(BR)CEO Collector−to−Emitter Breakdown Voltage IC = (−)1 mA, RBE = ∞ (−)50 V V(BR)EBO Emitter−to−Base Breakdown Voltage IE = (−)10 mA, IC = 0 A (−)6 V ton Turn−On Time tstg Storage Time tf See Specified Test Circuit Fall Time (50)50 ns (450)500 ns (20)20 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The 2SB1203/2SD1803 are classified by 0.5 A hFE as follows: Rank Q R S T hFE 70 to 140 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW = 20 ms D.C. ≤ 1% INPUT OUTPUT IB2 VR RB 50 W RL + 100 mF + 400 mF VCC = 25 V VBE = −5 V IC = 10 IB1 = −10 IB2 = 2 A For PNP, the polarity is reversed. www.onsemi.com 2 2SB1203/2SD1803 2SB1203 From top −100 mA −4 −90 mA −80 mA −70 mA −3 −60 mA 5 −50 mA −40 mA IC, Collector Current (A) IC, Collector Current (A) −5 −30 mA −20 mA −2 −10 mA −1 IB = 0 −0.4 −0.8 −1.2 −1.6 IC, Collector Current (A) 3 15 mA 2 10 mA 5 mA 0 −2.0 IB = 0 0 0.4 0.8 1.2 1.6 VCE, Collector−to−Emitter Voltage (V) Figure 1. IC − VCE Figure 2. IC − VCE 5 2SB1203 −30 mA −4 −25 mA −3 −15 mA −10 mA −2 −5 mA −1 4 25 mA 20 mA 3 15 mA 10 mA 2 5 mA 1 IB = 0 0 −8 −10 −2 −4 −6 VCE, Collector−to−Emitter Voltage (V) IB = 0 0 4 2 6 8 VCE, Collector−to−Emitter Voltage (V) −6 6 2SB1203 VCE = −2 V −5 2SD1803 VCE = 2 V IC, Collector Current (A) 5 −4 −3 Ta = 75°C −2 25°C −1 −0.4 −0.6 −0.8 −1.0 4 3 Ta = 75°C 2 25°C 1 −25°C −0.2 10 Figure 4. IC − VCE Figure 3. IC − VCE IC, Collector Current (A) 2.0 2SD1803 30 mA −20 mA 0 0 25 mA 20 mA VCE, Collector−to−Emitter Voltage (V) −5 0 0 4 1 IC, Collector Current (A) 0 0 2SD1803 From top 50 mA 45 mA 40 mA 35 mA 30 mA 0 −1.2 −25°C 0 0.2 0.4 0.6 0.8 1.0 VBE, Base−to−Emitter Voltage (V) VBE, Base−to−Emitter Voltage (V) Figure 6. IC − VBE Figure 5. IC − VBE www.onsemi.com 3 1.2 2SB1203/2SD1803 1000 7 5 2SB1203 VCE = −2 V Ta = 75°C 3 hFE, DC Current Gain hFE, DC Current Gain 1000 7 5 2 −25°C 25°C 100 7 5 3 3 Ta = 75°C 25°C −25°C 2 100 7 5 3 2 10 2SD1803 VCE = 2 V 2 10 2 3 5 7−10 5 7 −0.01 2 3 5 7−0.1 2 3 5 7−1.0 IC, Collector Current (A) 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IC, Collector Current (A) Figure 8. hFE — IC 1000 7 5 2SB1203 VCE = −5 V fT, Gain−Bandwidth Product (MHz) fT, Gain−Bandwidth Product (MHz) Figure 7. hFE — IC 3 2 100 7 5 3 2 10 2 3 2 5 7−0.1 3 5 7−1.0 2 2SD1803 VCE = 5 V 3 2 100 7 5 3 2 10 5 7−10 3 1000 7 5 IC, Collector Current (A) 2 3 5 7 0.1 2 3 5 7 1.0 2 3 IC, Collector Current (A) Figure 10. fT − IC Figure 9. fT − IC 5 2SB1203 f = 1 MHz 3 Cob, Output Capacitance (pF) Cob, Output Capacitance (pF) 5 2 100 7 5 3 2 10 5 7 −1.0 2 3 5 7 −10 5 7 10 2 3 2 100 7 5 3 2 10 5 7−100 2SD1803 f = 1 MHz 3 VCB, Collector−to−Base Voltage (V) 5 7 1.0 2 3 5 7 10 2 3 5 7 100 VCB, Collector−to−Base Voltage (V) Figure 11. Cob − VCB Figure 12. Cob − VCB www.onsemi.com 4 5 3 2 5 3 2 2SB1203 IC / IB = 20 VCE(sat), Collector−to−Emitter Saturation Voltage (mV) VCE(sat), Collector−to−Emitter Saturation Voltage (mV) 2SB1203/2SD1803 −1000 7 5 3 2 −100 7 5 3 25°C Ta = 75°C −25°C 2 −10 2SD1803 IC / IB = 20 1000 7 5 3 2 Ta = 75°C 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Figure 14. VCE(sat) — IC 5 3 2 −1.0 Ta = −25°C 7 3 25°C 5 3 2 1.0 75°C 5 5 7−0.01 2 3 5 7−0.1 2 3 2SD1803 IC / IB = 20 7 VBE(sat), Base−to−Emitter Saturation Voltage (V) VBE(sat), Base−to−Emitter Saturation Voltage (V) 10 2SB1203 IC / IB = 20 7 Ta = −25°C 75°C 5 3 5 7 −1.0 2 3 5 7−10 5 7 0.01 2 3 5 7 0.1 24 2SB1203 / 2SD1803 100 ms 1 ms 10 ms DC Operation Ta = 25°C DC Operation Tc = 25°C 0.1 7 5 3 Tc = 25°C 2 Single Pulse For PNP, the minus sign is omitted. 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 5 7 1.0 2 3 5 7 10 Figure 16. VBE(sat) − IC PC, Collector Dissipation (W) IC, Collector Current (A) 1.0 7 5 3 2 ICP IC 2 3 IC, Collector Current (A) Figure 15. VBE(sat) − IC 2 25°C 7 IC, Collector Current (A) 10 7 5 3 2 2 3 5 7 10 IC, Collector Current (A) Figure 13. VCE(sat) — IC −10 −25°C 2 10 5 7−0.01 2 3 5 7−0.1 2 3 5 7 −1.0 2 3 5 7−10 IC, Collector Current (A) 25°C 100 7 5 3 2 3 20 16 Ideal Heat Dissipation 12 8 4 0 5 7 100 2SB1203 / 2SD1803 No Heat Sink 1 0 20 40 60 80 100 120 Ta, Ambient Temperature (°C) VCE, Collector−to−Emitter Voltage (V) Figure 18. PC − Ta Figure 17. ASO www.onsemi.com 5 140 160 2SB1203/2SD1803 ORDERING INFORMATION Device Package Shipping memo 2SB1203S−E TP 500pcs./bag Pb Free 2SB1203S−H TP 500pcs./bag Pb Free and Halogen Free 2SB1203T−H TP 500pcs./bag Pb Free and Halogen Free 2SD1803S−E TP 500pcs./bag Pb Free 2SD1803S−H TP 500pcs./bag Pb Free and Halogen Free 2SD1803T−E TP 500pcs./bag Pb Free 2SD1803T−H TP 500pcs./bag Pb Free and Halogen Free 2SB1203S−TL−E TP−FA 700pcs./bag Pb Free 2SB1203S−TL−H TP−FA 700pcs./bag Pb Free and Halogen Free 2SB1203T−TL−E TP−FA 700pcs./bag Pb Free 2SB1203T−TL−H TP−FA 700pcs./bag Pb Free and Halogen Free 2SD1803S−TL−E TP−FA 700pcs./bag Pb Free 2SD1803S−TL−H TP−FA 700pcs./bag Pb Free and Halogen Free 2SD1803T−TL−E TP−FA 700pcs./bag Pb Free 2SD1803T−TL−H TP−FA 700pcs./bag Pb Free and Halogen Free www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK / TP−FA CASE 369AH ISSUE O DOCUMENT NUMBER: 98AON66236E DESCRIPTION: DPAK / TP−FA DATE 30 JAN 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS IPAK / TP CASE 369AJ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON66237E IPAK / TP DATE 30 JAN 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative