2SJ651

2SJ651 Ordering number : EN7501A 2SJ651 P-Channel Silicon MOSFET DC / DC Converter Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 Gate-to-Source Voltage VGSS ±20 V ID --20 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V --80 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 175 mJ Avalanche Current *2 IAV --20 A Tc=25°C Note : *1 VDD=30V, L=500µH, IAV=--20A *2 L≤500µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V --60 IDSS IGSS VGS(off) yfs VDS=--10V, ID=--1mA VDS=--10V, ID=--10A --1.2 RDS(on)1 RDS(on)2 ID=--10A, VGS=--10V ID=--10A, VGS=--4V 11 Marking : J651 Unit max V --1 µA ±10 µA --2.6 17 V S 45 60 mΩ 65 92 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2505QA MS IM TA-00001928 / 52703 TS IM TA-100559 No.7501-1/5 2SJ651 Continued from preceding page. Parameter Symbol Conditions Ratings min typ Unit max Input Capacitance Ciss pF Coss VDS=--20V, f=1MHz VDS=--20V, f=1MHz 2200 Output Capacitance 220 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 165 pF Turn-ON Delay Time td(on) See specified Test Circuit. 18 ns Rise Time tr td(off) See specified Test Circuit. 115 ns See specified Test Circuit. 190 ns See specified Test Circuit. Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 120 ns VDS=--30V, VGS=--10V, ID=--20A 45 nC 7.4 nC Gate-to-Source Charge Qgs Gate-to-Drain“Miller”Charge Qgd VDS=--30V, VGS=--10V, ID=--20A VDS=--30V, VGS=--10V, ID=--20A Diode Forward Voltage VSD IS=--20A, VGS=0V 9 nC --0.95 --1.2 V Package Dimensions unit : mm 7508-003 4.5 10.0 2.8 18.1 16.0 3.5 7.2 3.2 14.0 5.6 1.6 1.2 0.75 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML Switching Time Test Circuit Avalanche Resistance Test Circuit VDD= --30V VIN 0V --10V ≥50Ω RG ID= --10A RL=3Ω VIN D L VOUT PW=10µs D.C.≤1% 2SJ651 0V --10V G 50Ω VDD 2SJ651 P.G 50Ω S No.7501-2/5 2SJ651 ID -- VDS --25 --20 --15 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 25° C °C --20 --15 0 0 --5.0 120 100 80 Tc= 75° C 25°C --25°C 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V --1.5 --1.0 --0.5 --25 0 25 50 75 125 100 Case Temperature, Tc -- °C 150 80 60 40 20 --25 0 25 50 75 100 125 150 IT06173 yfs -- ID VDS= --10V 7 5 C 25° 3 2 Tc= 10 5°C --2 C 75° 7 5 3 2 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT06175 SW Time -- ID 5 Switching Time, SW Time -- ns °C 25°C --25°C Tc=7 5 --5.0 A --10 V --10 I D= S= VG , A --10 I D= 3 --0.1 7 5 3 2 --4.5 IT06171 Drain Current, ID -- A VGS=0V --1.0 7 5 3 2 --4.0 --4V S= G V , IT06174 --10 7 5 3 2 --3.5 Case Temperature, Tc -- °C IS -- VSD --100 7 5 3 2 --3.0 100 100 --2.0 --2.5 RDS(on) -- Tc IT06172 VDS= --10V ID= --1mA 0 --50 --2.0 120 0 --50 --10 VGS(off) -- Tc --2.5 --1.5 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 40 --1.0 Gate-to-Source Voltage, VGS -- V ID= --10A 60 --0.5 IT06170 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --4.5 RDS(on) -- VGS 160 Cutoff Voltage, VGS(off) -- V --25 --5 --5 Source Current, IS -- A --30 --10 VGS= --3V --10 --25 --4V --30 Tc= Drain Current, ID -- A --35 --35 75° C 0V 6V -- --8 V --40 Drain Current, ID -- A VDS= --10V --40 --1 --45 ID -- VGS --45 Tc=25°C 25 °C Tc = --2 5°C 75° C --50 VDD= --30V VGS= --10V td(off) 2 tf 100 7 5 tr 3 td(on) 2 10 --0.01 0 --0.3 --0.6 --0.9 --1.2 Diode Forward Voltage, VSD -- V --1.5 IT06176 7 --0.1 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 --10 2 3 IT06177 No.7501-3/5 2SJ651 Ciss, Coss, Crss -- VDS 5 Gate-to-Source Voltage, VGS -- V Ciss Ciss, Coss, Crss -- pF 2 1000 7 5 3 Coss Crss 2 --8 --7 --6 --5 --4 --3 --2 --1 100 0 7 --5 0 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 0 ID= --20A --10 7 5 3 2 Operation in this area is limited by RDS(on). --1.0 7 5 3 2 Tc=25°C Single pulse --0.1 --0.1 2 3 15 20 25 30 35 40 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 3 2 10 45 IT06179 PD -- Ta 2.5 ≤10µs 1 0µ s 10 0µ s 1m s 10 ms 1 0 DC 0m s op era tio n IDP= --80A --100 7 5 5 IT06178 ASO 2 Drain Current, ID -- A VDS= --30V ID= --20A --9 3 2.0 1.5 1.0 0.5 0 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 0 20 40 Avalanche Energy derating factor -- % 20 15 10 5 0 80 100 120 140 160 IT06181 EAS -- Ta 120 25 60 Ambient Temperature, Ta -- °C IT06180 PD -- Tc 30 Allowable Power Dissipation, PD -- W VGS -- Qg --10 f=1MHz 100 80 60 40 20 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT06182 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10417 No.7501-4/5 2SJ651 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS No.7501-5/5