2SJ661-DL-E

Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS(on)1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) ID IDP Allowable Power Dissipation PD PW≤10μs, duty cycle≤1% --60 V ±20 V --38 A --152 A 1.65 W 65 W Tc=25°C Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7537-001 7535-001 2SJ661-1E 2SJ661-DL-1E 1.4 3.0 3.0 5.3 0.9 1.75 8.0 1.3 7.9 1.2 1.75 5.3 4 0.9 9.2 7.9 1.2 1.3 4.5 10.0 8.0 9.2 13.4 4.5 10.0 0.254 1 2 3 0.8 13.08 1.27 1.27 0.8 0.5 2.54 2.54 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.4 1 : Gate 2 : Drain 3 : Source 0.5 2.54 0 to 0.25 2.4 1 2 3 1.35 1.47 2.54 TO-262-3L TO-263-2L Product & Package Information • Package : TO-262-3L • JEITA, JEDEC : TO-262 • Minimum Packing Quantity : 50pcs./magazine Marking • Package : TO-263-2L • JEITA, JEDEC : SC-83, TO-263 • Minimum Packing Quantity : 800pcs./reel Packing Type : DL Electrical Connection 2, 4 J661 LOT No. DL 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 53012 TKIM/N1805QA MSIM TB-00001078 No.8586-1/9 2SJ661 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 250 mJ --38 A Avalanche Current *2 °C Note : *1 VDD=--30V, L=200μH, IAV=--38A (Fig.1) *2 L≤200μH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VGS(off) | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--19A RDS(on)1 RDS(on)2 ID=--19A, VGS=--10V ID=--19A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time min typ max --60 Unit V VDS=--60V, VGS=0V VGS=±16V, VDS=0V --1.2 --1 μA ±10 μA --2.6 18 31 V S 29.5 39 mΩ 40 56 mΩ 4360 pF 470 pF Crss 335 pF td(on) 33 ns tr td(off) 285 ns Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See Fig.2 VDS=--30V, VGS=--10V, ID=--38A 295 ns 195 ns 80 nC 15 nC 12 IS=--38A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 0V --10V ≥50Ω RG --1.2 V VDD= --30V VIN ID= --19A RL=1.58Ω VIN 2SJ661 VDD 50Ω nC --1.0 Fig.2 Switching Time Test Circuit L 0V --10V Ratings Conditions D PW=10μs D.C.≤1% VOUT G 2SJ661 P.G 50Ω S Ordering Information Package Shipping 2SJ661-1E Device TO-262-3L 50pcs./magazine 2SJ661-DL-1E TO-263-2L 800pcs./reel memo Pb Free No.8586-2/9 2SJ661 --40 --30 --20 VGS= --3V --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 40 Tc=75°C 25°C 30 --25°C 20 10 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 5 3 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 1000 7 5 5 7 --100 IT08752 SW Time -- ID Tc= --3.0 --3.5 --4.0 40 I D= 30 = --4 VGS 0V , --19A = --1 VGS 20 10 --25 0 25 50 75 100 125 Ciss, Coss, Crss -- pF 100 7 tf 5 td(on) 3 150 IT08751 IS -- VSD VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 0 --0.3 --0.6 --0.9 --1.2 --1.5 IT08753 Ciss, Coss, Crss -- VDS f=1MHz Ciss 5 tr --5.0 IT08749 Diode Forward Voltage, VSD -- V td(off) 2 --4.5 V , --19A I D= 7 3 3 2 1000 7 Coss Crss 5 3 2 2 10 --0.1 50 10000 VDD= --30V VGS= --10V --2.5 60 --0.1 7 5 3 2 --0.01 2 2 --2.0 Case Temperature, Tc -- °C Source Current, IS -- A C 5° --2 = Tc °C 75 1.0 --0.1 --1.5 --100 7 5 3 2 °C 25 7 --1.0 RDS(on) -- Tc 0 --50 --10 5 10 --0.5 IT08750 | yfs | -- ID 2 0 70 VDS= --10V 3 °C 25 Gate-to-Source Voltage, VGS -- V ID= --19A 0 --2 Forward Transfer Admittance, | yfs | -- S 0 --5.0 50 7 --20 --10 60 100 --30 IT08748 RDS(on) -- VGS 70 --4.5 --40 Tc=7 5°C 25°C --25°C 0 --50 Tc =7 5° --2 5 °C C --4V --10 Switching Time, SW Time -- ns Drain Current, ID -- A --50 --60 75 °C --6 V --1 0V --60 0 VDS= --10V --70 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A --70 ID -- VGS --80 Tc=25°C --25 °C 25° C ID -- VDS --80 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT08754 100 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT08755 No.8586-3/9 2SJ661 VGS -- Qg --10 Drain Current, ID -- A --7 --6 --5 --4 --3 3 2 --1 3 2 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Ta 70 80 1.0 0.5 20 40 60 80 100 2 3 5 7 --1.0 120 Ambient Temperature, Ta -- °C 140 160 IT08735 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16831 PD -- Tc 70 1.5 0 Tc=25°C Single pulse IT08756 1.65 0 Operation in this area is limited by RDS(on). --0.1 --0.1 Allowable Power Dissipation, PD -- W 2.0 Allowable Power Dissipation, PD -- W --10 7 5 --1.0 7 5 0 0μ s ID= --38A 3 2 --2 10 μs 10 --100 7 5 --8 0 IDP= --152A(PW≤10μs) s 1m n s io m 10 0ms erat 10 op DC Gate-to-Source Voltage, VGS -- V --9 ASO 3 2 VDS= --30V ID= --38A 65 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT08758 No.8586-4/9 2SJ661 Taping Specification 2SJ661-DL-1E No.8586-5/9 2SJ661 Outline Drawing 2SJ661-DL-1E Land Pattern Example Mass (g) Unit 1.5 mm * For reference Unit: mm No.8586-6/9 2SJ661 Magazine Specification 2SJ661-1E No.8586-7/9 2SJ661 Outline Drawing 2SJ661-1E Mass (g) Unit 1.6 mm * For reference No.8586-8/9 2SJ661 Note on usage : Since the 2SJ661 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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