DATA SHEET
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N-Channel JFET
3
1: Source
2: Drain
3: Gate
1
2
15 V, 10 to 32 mA, 35 mS, CP
SC−59 / CP3
CASE 318BJ
2SK3557
MARKING DIAGRAM
Applications
IR
RANK
Features
LOT No.
LOT No.
• AM Tuner RF Amplification
• Low Noise Amplifier
• Large | yfs |
• Small Ciss
• Ultrasmall−sized Package Permitting 2SK3557−applied Sets to be
Made Smaller and Slimer
ELECTRICAL CONNECTION
• Ultralow Noise Figure
• These are Pb−Free Devices
3
Product & Package Information
• Package: CP
• JEITA, JEDEC: SC−59, TO−236, SOT−23, TO−236AB
• Minimum Packing Quantity: 3,000 Pcs./Reel
1
2
Specifications
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain−to−Source Voltage
VDSX
15
V
Gate−to−Drain Voltage
VGDS
−15
V
Gate Current
IG
10
mA
Drain Current
ID
50
mA
Allowable Power Dissipation
PD
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Device
Package
Shipping†
2SK3557−6−TD−E
CP
(Pb−Free)
3,000 / Tape &
Reel
2SK3557−7−TD−E
CP
(Pb−Free)
3,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
May, 2022 − Rev. 2
1
Publication Order Number:
2SK3557/D
2SK3557
ELECTRICAL CHARACTERISTICS (at Ta = 25°C)
Ratings
Typ
Max
Unit
Parameter
Symbol
Gate−to−Drain Breakdown Voltage
V(BR)GDS
IG = −10 mA, VDS = 0 V
−15
−
−
V
IGSS
VG S= −10 V, VDS = 0 V
−
−
−1.0
nA
Cutoff Voltage
VGS(off)
VDS = 5 V, ID = 100 mA
−0.3
−0.7
−1.5
V
Drain Current
IDSS
VDS = 5 V, VGS = 0 V
10*
−
32*
mA
Forward Transfer Admittance
| yfs |
VDS = 5 V, VGS = 0 V, f = 1 kHz
24
35
−
mS
Input Capacitance
Ciss
VDS = 5 V, VGS = 0 V, f = 1 MHz
−
10.0
−
pF
Reverse Transfer Capacitance
Crss
VDS = 5 V, VGS = 0 V, f = 1 MHz
−
2.9
−
pF
NF
VDS = 5 V, Rg = 1 kW, ID = 1 mA,
f = 1 kHz
−
1.0
−
dB
Gate Cutoff Current
Noise Figure
Conditions
Min
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*The 2SK3557 is classified by IDSS as follows: (unit: mA)
Table 1.
Rank
6
7
IDSS
10.0 to 20.0
16.0 to 32.0
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2
2SK3557
20
20
16
16
VGS = 0
12
ID, Drain Current (mA)
ID, Drain Current (mA)
VGS = 0
−0.1 V
−0.2 V
8
−0.3 V
−0.1 V
12
−0.2 V
8
−0.4 V
−0.4 V
4
−0.3 V
4
−0.6 V
−0.7 V
−0.5 V
−0.5 V
−0.6 V
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
2
VDS, Drain−to−Source Voltage (V)
4
8
10
12
Figure 2. ID − VDS
22
16
VDS = 5 V
20
VDS = 5 V
IDSS = 15 mA
14
18
IDSS = 30 mA
16
ID, Drain Current (mA)
ID, Drain Current (mA)
6
VDS, Drain−to−Source Voltage (V)
Figure 1. ID − VDS
14
20 mA
12
15 mA
10
8
6
10 mA
4
12
10
8
6
Ta = −25°C
4
2
−1.2 −1.0 −0.8 −0.6 −0.4 −0.2
0
0
−1.2
0.2
VGS, Gate−to−Source Voltage (V)
−1.0
−0.8
⎜ yfs ⎜, Forward Transfer Admittance (mS)
VDS = 5 V
f = 1 kHz
30 mA
IDSS = 15 mA
2
10
7
5
3
2
3
5
7 1.0
2
3
5 7
−0.4
−0.2
0
0.2
Figure 4. ID − VGS
7
3
−0.6
VGS, Gate−to−Source Voltage (V)
Figure 3. ID − VGS
5
25°C
75°C
2
0
−1.4
⎜ yfs ⎜, Forward Transfer Admittance (mS)
−0.7 V
0
10
2
3
100
VDS = 5 V
VGS = 0
f = 1 kHz
7
5
3
2
10
7
5
ID, Drain Current (mA)
10
2
3
IDSS, Drain Current (mA)
Figure 5. ⎜ yfs ⎜ − ID
Figure 6. ⎜ yfs ⎜ − ID
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3
5
2SK3557
3
VDS = 5 V
ID = 100 mA
2
VGS = 0
f = 1 MHz
Ciss, Input Capacitance (pF)
VGS(off), Cutoff Voltage (V)
3
1.0
7
5
3
2
10
7
5
3
7
2
10
3
5
7
1.0
IDSS, Drain Current (mA)
5
7
2
10
3
Figure 8. Ciss − VDS
10
10
VDS = 0
f = 1 MHz
7
VDS = 5 V
ID = 1 mA
Rg = 1 kW
8
NF, Noise Figure (dB)
5
3
2
1.0
6
4
2
7
0
0.01 2 3 5 70.1 2 3 5 7 1.0 2 3 5 710 2 3 5 7100
5
7
1.0
2
3
5
7
3
2
10
VDS, Drain−to−Source Voltage (V)
f, Frequency (kHz)
Figure 9. Crss − VDS
Figure 10. NF − f
10
240
PD, Allowable Power Dissipation (mW)
VDS = 5 V
ID = 1 mA
f = 1 kHz
8
NF, Noise Figure (dB)
3
VDS, Drain−to−Source Voltage (V)
Figure 7. VGS(off) − IDSS
Crss, Reverse Transfer Capacitance (pF)
2
6
4
2
0
200
160
120
80
40
0
0.1 2 3 5 71.0 2 3 5 710 2 3 5 7100 2 3 5 71000
0
20
40
60
80
100
120
Ta, Ambient Temperature (°C)
Rg, Signal Source Resistance (kW)
Figure 11. NF − Rg
Figure 12. PD − Ta
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4
140
160
2SK3557
Land Pattern Example
2.4
1.0
0.8
0.95
0.95
Figure 13. Land Pattern Example
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−59 / CP3
CASE 318BJ
ISSUE O
DATE 09 JAN 2015
SCALE 2:1
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS,
OR GATE BURRS SHALL NOT EXCEED 0.20 PER SIDE.
4. DIMENSIONS D AND E1 ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.10 AND 0.20 FROM THE TIP.
L
3X
3
E1
E
1
2
e
3X
b
0.10
TOP VIEW
M
C A
A
3X
A2
A1
C
SIDE VIEW
SEATING
PLANE
END VIEW
3X
GENERIC
MARKING DIAGRAM
1
XXX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
3X
1.00
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3.40
0.95
PITCH
MILLIMETERS
MIN
MAX
0.95
1.35
0.00
0.10
0.20
0.40
0.35
0.50
0.10
0.20
2.75
3.05
2.30
2.70
1.35
1.65
0.95 BSC
0.35
0.75
XXX MG
G
RECOMMENDED
SOLDERING FOOTPRINT*
0.80
c
DIM
A
A1
A2
b
c
D
E
E1
e
L
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON94458F
SC−59 / CP3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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