2SK3709

2SK3709 Ordering number : ENN8023 2SK3709 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Conditions Ratings Unit VDSS VGSS ±20 V ID 37 A IDP 100 PW≤10µs, duty cycle≤1% V 148 A 2.0 W Allowable Power Dissipation PD 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Enargy (Single Pulse) *1 EAS 427 mJ Avalanche Current *2 IAV 37 A Tc=25°C *1 VDD=20V, L=500µH, IAV=37A *2 L≤500µH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS Conditions ID=1mA, VGS=0 Ratings min typ Unit max 100 V VDS=100V, VGS=0 1 ±10 µA µA IGSS VGS(off) VGS= ±16V, VDS=0 VDS=10V, ID=1mA 1.2 yfs RDS(on)1 VDS=10V, ID=19A 25 ID=19A, VGS=10V 19 25 mΩ RDS(on)2 ID=19A, VGS=4V 23 32 mΩ 2.6 36 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21405QA TS IM TB-00000494 No.8023-1/4 2SK3709 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr td(off) tf Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Conditions Ratings min VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz typ Unit max 6250 pF 440 pF 380 pF See specified Test Circuit. 45 ns See specified Test Circuit. 115 ns See specified Test Circuit. 500 ns See specified Test Circuit. 180 ns VDS=50V, VGS=10V, ID=37A VDS=50V, VGS=10V, ID=37A 117 nC 20 nC VDS=50V, VGS=10V, ID=37A IS=37A, VGS=0 25.8 nC 0.97 1.2 V Marking : K3709 Package Dimensions unit : mm 2063A 4.5 2.8 3.5 7.2 10.0 5.6 18.1 16.0 3.2 2.4 14.0 1.6 1.2 0.7 0.75 1 2 1 : Gate 2 : Drain 3 : Source 3 2.55 2.4 2.55 2.55 SANYO : TO-220ML 2.55 Switching Time Test Circuit VIN Unclamped Inductive Test Circuit VDD=50V 10V 0V L ID=19A RL=2.63Ω VIN D ≥50Ω DUT VOUT PW=10µs D.C.≤1% 10V 0V G 50Ω VDD 2SK3709 P.G 50Ω S No.8023-2/4 2SK3709 25°C Tc= -25°C 4V 10V VDS=10V 60 50 40 30 20 VGS=3V 40 30 20 10 0 25 °C 10 50 Tc= 75° C --25 °C Drain Current, ID -- A Drain Current, ID -- A 6V 60 ID -- VGS 70 Tc=25°C 75°C ID -- VDS 70 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain-to-Source Voltage, VDS -- V 4.0 0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 50 1.0 0.5 IT07352 4.5 IT07353 RDS(on) -- Tc 50 40 35 30 Tc=75°C 25 25°C 20 --25°C 15 10 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 25 2 °C C 5° --2 10 = Tc °C 75 7 5 3 2 20 3 5 7 1.0 2 3 5 7 10 2 3 10 --25 0 25 100 125 150 IT07355 VGS=0 1.0 7 5 3 2 0.1 7 5 3 2 0.3 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD -- V IT07357 Ciss, Coss, Crss -- VDS 10000 VDD=50V VGS=10V td (off) 7 75 IF -- VSD 0 SW Time -- ID 1000 50 10 7 5 3 2 5 7 100 IT07356 Drain Current, ID -- A V 10 S= 15 0.01 2 =4V V GS , VG 19A I D= 100 7 5 3 2 5 3 I D= 25 , 19A Case Temperature, Tc -- °C VDS=10V 1.0 0.1 f=1MHz Ciss 7 5 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 10 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 7 30 IT07354 yfs -- ID 100 35 Tc=7 5°C 25°C 3 40 5 --50 5 2 45 --25°C 45 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=19A 3 2 tf 100 tr 7 3 2 1000 7 Coss 5 td(on) 5 Crss 3 3 0.1 2 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT07358 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT07359 No.8023-3/4 2SK3709 VGS -- Qg 10 8 7 6 5 4 3 3 2 0 20 40 60 80 100 Total Gate Charge, Qg -- nC 120 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.0 0.5 0 3 5 7 10 2 2 5 7 100 IT07361 3 PD -- Tc 40 1.5 2 Drain-to-Source Voltage, VDS -- V IT07360 2.0 µs 0µ s Tc=25°C Single pulse 0.1 0.1 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 3 2 1 10 10 1m s 10 m 1 DC 00m s s op era tio n Operation in this area is limited by RDS(on). 10 7 5 1.0 7 5