Ordering number : EN7671A
2SK3738
N-Channel JFET
http://onsemi.com
40V, 50 to 130μA, 0.13mS, SMCP
Applications
•
•
Impedance conversion
Infrared sensor
Features
•
•
•
Small IGSS
Small Ciss
Ultrasmall package permitting applied sets to be small and slim
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Drain Voltage
VDSS
VGDS
Gate Current
Drain Current
Conditions
Ratings
Unit
40
V
--40
V
IG
10
mA
ID
PD
1
mA
Allowable Power Dissipation
100
mW
Junction Temperature
Tj
Storage Temperature
Tstg
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7027A-003
• Package
: SMCP
• JEITA, JEDEC
: SC-75, SOT-416
• Minimum Packing Quantity : 3,000 pcs./reel
0.1
0.4
1
2
0.6
0 to 0.1
KB
TL
0.2
0.5 0.5
0.75
Marking
LOT No.
0.8
3
Packing Type: TL
LOT No.
1.6
0.4
0.3
0.1 MIN
2SK3738-TL-E
1.6
1 : Source
2 : Drain
3 : Gate
Electrical Connection
3
SMCP
1
Semiconductor Components Industries, LLC, 2013
August, 2013
2
91212 TKIM/42004GB TSIM TA-100829 No.7671-1/6
2SK3738
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
VGS(off)
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
IDSS
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Ratings
Conditions
min
IG=--10μA, VDS=0V
VGS=--20V, VDS=0V
typ
Unit
max
--40
V
--500
VDS=10V, ID=1μA
--1.5
VDS=10V, VGS=0V
50
VDS=10V, VGS=0V, f=1kHz
0.06
VDS=10V, VGS=0V, f=1MHz
pA
--2.3
V
130
μA
0.13
mS
1.7
pF
0.7
pF
Ordering Information
Device
2SK3738-TL-E
Package
Shipping
memo
SMCP
3,000pcs./reel
Pb Free
ID -- VDS
140
120
100
V GS=0V
80
--0.2V
60
--0.4V
Drain Current, ID -- μA
120
--0.6V
--0.8V
--1.0V
--1.2V
--1.4V
20
0
0
1
2
3
VGS=0V
100
--0.2V
80
--0.4V
60
--0.6V
40
--0.8V
--1.0V
20
--1.4V
--1.2V
0
4
Drain-to-Source Voltage, VDS -- V
5
0
ID -- VGS
4
8
16
20
ITR00838
ID -- VGS
80
VDS=10V
IDSS=50μA
12
Drain-to-Source Voltage, VDS -- V
ITR00837
VDS=10V
IDSS=100μA
70
20
--2
5°C
75
°C
30
100
80
25
°C
40
°C
75
Ta
=
--2
5
50
60
40
10
20
0
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
Gate-to-Source Voltage, VGS -- V
0
ITR00839
140
120
Drain Current, ID -- μA
°C
60
160
Drain Current, ID -- μA
40
Ta
=2
5°
C
Drain Current, ID -- μA
ID -- VDS
140
0
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
Gate-to-Source Voltage, VGS -- V
0
ITR00840
No.7671-2/6
2SK3738
VGS(off) -- IDSS
VDS=10V
ID=1μA
2
--1.0
7
3
5
7
100
2
Drain Current, IDSS -- μA
2
0.1
7
3
3
5
7
100
2
Drain Current, IDSS -- μA
IT06668
PD -- Ta
120
IT06669
Ciss -- VDS
10
VGS=0
f=1MHz
7
100
Input Capacitance, Ciss -- pF
Allowable Power Dissipation, PD -- mW
VDS=10V
VGS=0
f=1kHz
5
5
80
60
40
20
0
0
5
3
2
1.0
7
5
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT06670
3
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT06671
Crss -- VDS
5
Reverse Transfer Capacitance, Crss -- pF
⏐yfs⏐ -- IDSS
3
Forward Transfer Admittance, ⏐yfs⏐ -- mS
Cutoff Voltage, VGS(off) -- V
3
VGS=0
f=1MHz
3
2
1.0
7
5
3
2
0.1
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT06672
No.7671-3/6
2SK3738
Embossed Taping Specification
2SK3738-TL-E
No.7671-4/6
2SK3738
Outline Drawing
2SK3738-TL-E
Land Pattern Example
Mass (g) Unit
0.003 mm
* For reference
Unit: mm
0.7
1.3
0.7
0.7
0.6
0.5
0.5
No.7671-5/6
2SK3738
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PS No.7671-6/6
