2SK3746

Ordering number : EN8283A 2SK3746 N-Channel Power MOSFET http://onsemi.com 1500V, 2A, 13Ω, TO-3P-3L Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) ID IDP Allowable Power Dissipation PD PW≤10μs, duty cycle≤1% Tc=25°C Unit 1500 V ±20 V 2 A 4 A 2.5 W 110 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 41 mJ 2 A Avalanche Current *2 *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7539-002 • Package : TO-3P-3L • JEITA, JEDEC : SC-65, TO-247, SOT-199 • Minimum Packing Quantity : 30 pcs./magazine 2SK3746-1E 4.8 15.6 5.0 1.5 Marking Electrical Connection 13.6 16.76 10.0 19.9 2 K3746 LOT No. 3.5 18.4 7.0 3.2 1 20.0 2.0 3.0 1.0 2 5.45 3 3 1.4 1 0.6 1 : Gate 2 : Drain 3 : Source 5.45 TO-3P-3L Semiconductor Components Industries, LLC, 2013 July, 2013 53012 TKIM TC-00002762/62005QB MSIM TB-00001345 No.8283-1/7 2SK3746 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Ratings Conditions min typ 1500 ID=1mA, VGS=0V VDS=1200V, VGS=0V Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=10V, ID=1mA 2.5 Forward Transfer Admittance | yfs | VDS=20V, ID=1A 0.7 Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD r507 RG μA ±10 μA 1.4 See Fig.2 IS=2A, VGS=0V V S 10 VDS=200V, VGS=10V, ID=2A 13 Ω 380 pF 70 pF 40 pF 12 ns 37 ns 152 ns 59 ns 37.5 nC 2.7 nC 20 nC 0.88 1.2 V Fig.2 Switching Time Test Circuit VIN L VDD=200V 10V 0V ID=1A RL=200Ω 2SK3746 VDD 507 100 3.5 VIN 10V 0V Unit V VDS=30V, f=1MHz Fig.1 Avalanche Resistance Test Circuit max D VOUT PW=10μs D.C.≤0.5% G 2SK3746 P.G RGS=50Ω S Ordering Information Device 2SK3746-1E Package Shipping memo TO-3P-3L 30pcs./magazine Pb Free No.8283-2/7 2SK3746 ID -- VDS 4.0 VDS=20V pulse 8V 2.5 6V 2.0 1.5 5V 1.0 Tc= --25°C 2.5 10V 3.0 Drain Current, ID -- A Drain Current, ID -- A 3.5 ID -- VGS 3.0 Tc=25°C pulse 2.0 25°C 1.5 75°C 1.0 0.5 0.5 VGS=4V 0 0 0 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 50 0 4 6 8 10 12 14 16 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=1A VGS=10V Tc=75°C 25°C 10 --25°C 5 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V | yfs | -- ID °C 25 1.0 5 --25 0 5°C --2 °C 75 3 2 5 7 2 0.1 3 5 7 Drain Current, ID -- A 2 1.0 125 150 IT09034 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT09036 Ciss, Coss, Crss -- VDS 5 f=1MHz 3 2 Ciss, Coss, Crss -- pF td(off) 2 100 tf 7 5 3 tr 2 1000 7 5 Ciss 3 2 Co ss 100 7 5 Crss 3 2 td(on) 10 0.1 100 3 2 IT09035 VDD=200V VGS=10V 3 75 VGS=0V 0.01 0.2 3 SW Time -- ID 5 50 IS -- VSD 3 2 3 25 10 7 5 2 = Tc 5 Case Temperature, Tc -- °C 3 7 10 IT09033 VDS=20V 0.1 Switching Time, SW Time -- ns 20 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 18 15 0 --50 0 0 20 5°C 25°C --25°C 15 25 Tc= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 20 IT09032 RDS(on) -- Tc 30 ID=1A 25 18 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 30 2 IT09031 10 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT09037 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT09038 No.8283-3/7 2SK3746 VGS -- Qg 10 3 4 3 2 s 10 10m 0m s s n io at er 5 1.0 7 5 op 6 0μ s C Drain Current, ID -- A 7 10 1m ID=2A 2 8 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 1 0 10 0 20 30 Total Gate Charge, Qg -- nC Tc=25°C Single pulse 0.01 1.0 40 2 3 5 7 10 Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 5 7 100 2 3 5 71000 2 3 IT16891 PD -- Tc 120 2.5 2 3 Drain-to-Source Voltage, VDS -- V IT09039 PD -- Ta 3.0 Allowable Power Dissipation, PD -- W IDP=4A(PW≤10μs) D Gate-to-Source Voltage, VGS -- V 9 ASO 7 5 VDS=200V ID=2A 110 100 80 60 40 20 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09041 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT09042 No.8283-4/7 2SK3746 Magazine Specification 2SK3746-1E No.8283-5/7 2SK3746 Outline Drawing 2SK3746-1E Mass (g) Unit 1.8 mm * For reference No.8283-6/7 2SK3746 Note on usage : Since the 2SK3746 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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