2SK3748

Ordering number : EN8250B 2SK3748 N-Channel Power MOSFET http://onsemi.com 1500V, 4A, 7Ω, TO-3PF-3L Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Attachment workability is good by Mica-less package Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) ID* IDP Allowable Power Dissipation PD Unit 1500 V ±20 V PW≤10μs, duty cycle≤1% Tc=25°C 4 A 8 A 3.0 W 65 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 165 mJ Avalanche Current *2 4 A *Shows chip capability *1 VDD=50V, L=20mH, IAV=4A (Fig.1) *2 L≤20mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7538A-002 • Package : TO-3PF-3L • JEITA, JEDEC : SC-94 • Minimum Packing Quantity : 30 pcs./magazine 2SK3748-1E 5.5 4.5 15.5 3.0 Marking Electrical Connection 10.0 3.6 3.5 2.0 5.0 25.0 24.5 2 2.0 2.0 K3748 19.3 LOT No. 4.0 0.75 2 5.45 1 0.9 3 3 3.3 1 2.0 5.45 1 : Gate 2 : Drain 3 : Source TO-3PF-3L Semiconductor Components Industries, LLC, 2013 July, 2013 53012 TKIM TC-00002764/72905 MSIM TB-00001688 / 31005QB TSIM TB-00001272 No.8250-1/7 2SK3748 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions Ratings min typ Unit max 1500 ID=1mA, VGS=0V VDS=1200V, VGS=0V Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=10V, ID=1mA 2.5 Forward Transfer Admittance | yfs | VDS=20V, ID=2A 1.7 Static Drain-to-Source On-State Resistance RDS(on) ID=2A, VGS=10V Input Capacitance Ciss V 100 μA ±10 μA 3.5 2.8 V S 5 7 790 Ω pF Output Capacitance Coss 140 pF Reverse Transfer Capacitance Crss 70 pF Turn-ON Delay Time td(on) tr 17 ns 75 ns 360 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD trr Reverse Recovery Time Fig.1 Avalanche Resistance Test Circuit VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=4A IS=4A, VGS=0V IS=4A, VGS=0V, dis/dt=100A/μs ns 80 nC 6.4 nC 36 nC 0.94 D VOUT PW=10μs D.C.≤0.5% V ns L ≥50Ω RG ID=2A RL=100Ω VIN 1.2 340 Fig.2 Switching Time Test Circuit VDD 200V VIN 10V 0V 116 2SK3748 10V 0V VDD 50Ω G 2SK3748 P.G RGS 50Ω S Ordering Information Device 2SK3748-1E Package Shipping memo TO-3PF-3L 30pcs./magazine Pb Free No.8250-2/7 2SK3748 ID -- VDS 8 VDS=20V 8V 10V 7 6 Tc= --25°C 6V 6 Drain Current, ID -- A Drain Current, ID -- A ID -- VGS 7 Tc=25°C 5 5V 4 3 2 VGS=4V 1 5 25°C 4 3 75°C 2 1 0 0 0 10 20 30 40 50 60 Drain-to-Source Voltage, VDS -- V 70 0 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 14 2 IT09205 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=2A VGS=10V Tc=75°C 8 6 25°C 4 --25°C 2 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 2 6 4 2 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 7 5 3 2 150 IT09208 IS -- VSD VGS=0V 10 7 5 1.0 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 2 3 5 7 2 1.0 Drain Current, ID -- A 3 5 7 td(off) 5 0.3 0.6 0.9 1.2 Diode Forward Voltage, VSD -- V 1.5 IT09210 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 7 0 IT09209 SW Time -- ID 1000 f=1MHz 3 2 Ciss, Coss, Crss -- pF 3 2 tf 100 7 5 tr 3 td(on) 2 10 0.1 8 2 C 25° C ° --25 Tc= C 75° 3 10 IT09207 VDS=20V 5 0.1 0.1 Switching Time, SW Time -- ns 20 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 18 12 0 --50 0 0 14 Tc= 75°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 20 IT09206 RDS(on) -- Tc 16 ID=2A 12 18 1000 7 5 Ciss 3 2 Coss Crss 100 7 5 3 2 10 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT09211 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT09212 No.8250-3/7 2SK3748 VGS -- Qg 10 8 10 7 5 7 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 6 5 4 3 1 3 2 10 20 30 40 50 60 70 Total Gate Charge, Qg -- nC 90 1m s 1 10 0ms DC 0ms op er ati on Tc=25°C Single pulse 2 3 5 7 10 Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 3 5 7 100 2 3 5 7 1000 2 3 IT16890 PD -- Tc 80 2.5 2 Drain-to-Source Voltage, VDS -- V IT09213 3.0 μs 0μ s Operation in this area is limited by RDS(on). 0.01 1.0 PD -- Ta 3.5 Allowable Power Dissipation, PD -- W 80 10 ID=4A 3 2 2 0 10 IDP=8A(PW≤10μs) 1.0 7 5 0.1 7 5 0 ASO 2 VDS=200V ID=4A 70 65 60 50 40 30 20 10 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09215 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT09216 No.8250-4/7 2SK3748 Magazine Specification 2SK3748-1E No.8250-5/7 2SK3748 Outline Drawing 2SK3748-1E Mass (g) Unit 5.5 mm * For reference No.8250-6/7 2SK3748 Note on usage : Since the 2SK3748 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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