2SK3820-DL-E

Ordering number : EN8147A 2SK3820 N-Channel Power MOSFET http://onsemi.com 100V, 26A, 60mΩ, TO-263-2L Features • • • ON-resistance RDS(on)1=45mΩ(typ.) Input capacitance Ciss=2150pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) 100 PW≤10μs, duty cycle≤1% V ±20 V 26 A 104 A 1.65 W Allowable Power Dissipation PD 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 84.5 mJ Avalanche Current *2 Tc=25°C 26 A Note : *1 VDD=20V, L=200μH, IAV=26A (Fig.1) *2 L≤200μH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Ordering & Package Information unit : mm (typ) 7535-001 2SK3820-DL-1E 4.5 1.4 3.0 Package Shipping memo 2SK3820-DL-1E TO-263-2L (SC-83, TO-263) 800pcs./reel Pb Free 1.75 Packing Type: DL 5.3 Marking K3820 0.9 7.9 4 8.0 1.3 9.2 13.4 1.2 10.0 Device LOT No. DL 0.254 2 3 1.27 0.8 0.5 2.54 0 to 0.25 2.4 2.54 Electrical Connection 1.35 1 Semiconductor Components Industries, LLC, 2013 June, 2013 2, 4 1 : Gate 2 : Drain 3 : Source 4 : Drain TO-263-2L 1 3 61913 TKIM TC-00002869/61005QA MSIM TB-00000899 No.8147-1/6 2SK3820 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 VDS=10V, ID=13A 11 RDS(on)1 ID=13A, VGS=10V 45 60 mΩ RDS(on)2 ID=13A, VGS=4V 56 80 mΩ Coss Reverse Transfer Capacitance Turn-ON Delay Time 100 V μA ±10 μA 2.6 19 V S pF 160 pF Crss 110 pF td(on) tr 20 ns 34 ns Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See Fig.2 VDS=50V, VGS=10V, ID=26A IS=26A, VGS=0V ns 44 nC 7.8 nC V Fig.2 Switching Time Test Circuit VDD=50V ID=13A RL=3.85Ω VIN G D 2SK3820 nC 1.2 10V 0V L S ns 62 1.0 VIN D 185 9.8 Fig.1 Unclamped Inductive Switching Test Circuit 50Ω 1 2150 td(off) tf 10V 0V Unit max IGSS VGS(off) | yfs | Ciss ≥50Ω RG typ ID=1mA, VGS=0V VDS=100V, VGS=0V Output Capacitance Turn-OFF Delay Time min V(BR)DSS IDSS Input Capacitance Rise Time Ratings Conditions VDD VOUT PW=10μs D.C.≤1% G 2SK3820 P.G 50Ω S No.8147-2/6 2SK3820 25 20 15 10 30 25 20 15 Tc= 75° C --25 °C Drain Current, ID -- A Drain Current, ID -- A 30 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Drain-to-Source Voltage, VDS -- V 0 110 100 90 80 Tc=75°C 60 25°C 50 40 --25°C 30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IT07856 RDS(on) -- Tc 130 120 110 100 90 V 80 70 4 S= , VG 3A =1 ID 60 V 10 S= , VG A 50 13 I D= 40 30 20 10 0 --50 20 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 10 3 Source Current, IS -- A 2 °C 25 C 5° --2 = °C Tc 75 7 5 3 2 1.0 7 5 0.1 50 75 100 125 150 IT07858 IS -- VSD 100 7 5 3 2 VDS=10V 10 25 Case Temperature, Tc -- °C ⎪yfs⎪ -- ID 7 0 --25 IT07857 VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Tc=7 5°C 25°C --25°C 2 Forward Transfer Admittance, ⎪yfs⎪ -- S 1.0 Gate-to-Source Voltage, VGS -- V ID=13A 70 0.5 IT07855 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 5.0 RDS(on) -- VGS 120 0.01 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 5 0 3 VDD=50V VGS=10V 1.2 1.5 IT07860 f=1MHz 3 Ciss 2 Ciss, Coss, Crss -- pF 100 tf 5 3 tr 2 0.9 Ciss, Coss, Crss -- VDS 5 td(off) 0.6 Diode Forward Voltage, VSD -- V 2 7 0.3 IT07859 SW Time -- ID 5 Switching Time, SW Time -- ns 25 5 0 5 °C VGS=3V 5 75°C 35 C Tc= --25° C 10 VDS=10V 4V 8V 35 ID -- VGS 40 6V V Tc=25°C 25° ID -- VDS 40 td(on) 1000 7 5 3 Coss 2 Crss 100 10 7 0.1 7 5 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT07861 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 30 IT07862 No.8147-3/6 2SK3820 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 1 0 5 10 15 20 25 30 35 40 Total Gate Charge, Qg -- nC 100 7 5 3 2 ID=26A 50 0m s 1.0 0.5 0 1m 10 D 1.0 7 5 3 2 C Operation in this area is limited by RDS(on). 2 3 s m s op er at 5 7 10 io 2 3 n 5 7 100 Drain to Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.5 μs 0μ s 10 2 3 IT17015 PD -- Tc 60 1.65 10 10 10 7 5 3 2 IT07863 PD -- Ta 2.0 Allowable Power Dissipation, PD -- W 45 IDP=104A(PW≤10μs) 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 2 3 5 7 1.0 0.1 2 0 ASO 3 2 VDS=50V ID=26A 50 40 30 20 10 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07811 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT07822 No.8147-4/6 2SK3820 Outline Drawing 2SK3820-DL-1E Land Pattern Example Mass (g) Unit 1.5 mm * For reference Unit: mm No.8147-5/6 2SK3820 Note on usage : Since the 2SK3820 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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