2SK4065-DL-1E

Ordering number : ENA0324A 2SK4065 N-Channel Power MOSFET http://onsemi.com 75V, 100A, 6mΩ, TO-263-2L Features • • ON-resistance RDS(on)1=4.6mΩ (typ.) 4V drive • Input capacitance Ciss=12200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) 75 PW≤10μs, duty cycle≤1% V ±20 V 100 A 400 A 1.65 W Allowable Power Dissipation PD 90 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 735 mJ 70 A Avalanche Current *2 Tc=25°C Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7535-001 • Package : TO-263-2L • JEITA, JEDEC : SC-83, TO-263 • Minimum Packing Quantity : 800 pcs./reel 2SK4065-DL-1E 4.5 1.4 3.0 1.75 5.3 Marking K4065 0.9 1.3 7.9 4 Packing Type: DL 8.0 9.2 13.4 1.2 10.0 LOT No. DL 0.254 2 3 1.27 0.8 0.5 2.54 0 to 0.25 2.4 2.54 Electrical Connection 1.35 1 Semiconductor Components Industries, LLC, 2013 July, 2013 2, 4 1 : Gate 2 : Drain 3 : Source 4 : Drain TO-263-2L 1 3 53012 TKIM TC-00002767/41006QA MSIM TB-00002239 No. A0324-1/7 2SK4065 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=75V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 VDS=10V, ID=50A 47 RDS(on)1 ID=50A, VGS=10V 4.6 6.0 mΩ RDS(on)2 ID=50A, VGS=4V 5.7 8.0 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 75 V 1 μA ±10 μA 2.6 78 V S 12200 pF 950 pF Crss 730 pF Turn-ON Delay Time td(on) 80 ns Rise Time tr 460 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See Fig.2 VDS=35V, VGS=10V, ID=100A ns 640 ns 220 nC 40 nC 50 IS=100A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 10V 0V 1.2 V VDD=35V VIN ≥50Ω ID=50A RL=0.7Ω VIN 2SK4065 VDD 50Ω nC 0.9 Fig.2 Switching Time Test Circuit L 10V 0V 930 D PW=10μs D.C.≤1% VOUT G 2SK4065 P.G 50Ω S Ordering Information Device 2SK4065-DL-1E Package Shipping memo TO-263-2L 800pcs./reel Pb Free No. A0324-2/7 2SK4065 100 VGS=3V 80 60 120 100 80 60 40 40 20 20 25° --25°C C 120 140 Tc= 75° C 140 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 2.0 0 0.5 1.0 1.5 20 15 10 Tc=75°C 25°C 5 3.0 3.5 4.0 4.5 IT10699 Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 2.5 RDS(on) -- Tc 14 ID=50A Single pulse 2.0 Gate-to-Source Voltage, VGS -- V IT10698 RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc= --2 5°C 75°C 6V V 8V 160 Drain Current, ID -- A Drain Current, ID -- A 160 VDS=10V Single pulse 180 10 180 ID -- VGS 200 Tc=25°C Single pulse 25°C ID -- VDS 200 12 10 4V S= 8 VG A, 50 I D= 6 V =10 GS A, V 50 I D= 4 2 --25°C 0 --50 0 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 100 | yfs | -- ID °C 25 C 5° 2 = Tc --2 75 10 °C 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 tf 5 3 2 tr 100 0.4 0.6 0.8 1.0 1.2 1.4 IT10703 Ciss, Coss, Crss -- VDS 3 f=1MHz 2 Ciss 10k 7 5 3 2 Coss 1k Crss 5 7 5 0.1 0.2 7 td(on) 150 IT10701 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns td(off) 125 1.0 7 5 3 2 0 VDD=35V VGS=10V 2 100 10 7 5 3 2 5 7 100 IT10702 SW Time -- ID 3 75 VGS=0V Single pulse 100 7 5 3 2 0.1 7 5 3 2 0.01 3 2 1.0 0.1 50 IS -- VSD 3 2 7 3 25 Case Temperature, Tc -- °C VDS=10V Single pulse 5 0 --25 IT10700 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 10 25°C --25°C 1 Tc=7 5°C 0 3 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT10704 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT10756 No. A0324-3/7 2SK4065 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 50 100 150 200 100 7 5 3 2 10 7 5 3 2 PD -- Ta 1.5 1.0 0.5 0μ s μs Operation in this area is limited by RDS(on). 1.0 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT10881 PD -- Tc 100 1.65 10 10 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 10 1ms 10 ms DC 0m op s era tio n ID=100A IT10705 0 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT10707 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10708 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=400A(PW≤10μs) 0.1 0.1 250 Total Gate Charge, Qg -- nC 2.0 ASO 1000 7 5 3 2 VDS=35V ID=100A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10709 No. A0324-4/7 2SK4065 Taping Specification 2SK4065-DL-1E No. A0324-5/7 2SK4065 Outline Drawing 2SK4065-DL-1E Land Pattern Example Mass (g) Unit 1.5 mm * For reference Unit: mm No. A0324-6/7 2SK4065 Note on usage : Since the 2SK4065 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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