2SK4088LS

2SK4088LS N-Channel Power MOSFET 650V, 11A, 0.85 , TO-220F-3FS • • ON-resistance RDS(on)=0.65 10V drive (typ.) • http://onsemi.com Input capacitance Ciss=1000pF (typ.) at Ta=25°C Note : 1 Shows chip capability 2 Package limited 3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. 4 VDD=50V, L=1mH, IAV=11A (Fig.1) 5 L 1mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. unit : mm (typ) 7528-001 4.7 10.16 3.18 2.54 2.76 1.47 MAX 0.8 1 2.54 2 3 0.5 2.54 Semiconductor Components Industries, LLC, 2013 May, 2013 51513 TKIM TC-00002921/O1007 TIIM TC-00000931/40407QB TIIM TC-00000631/ No. A0556-1/7 22107QB TIIM TC-00000372 at Ta=25°C Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=10mA, VGS=0V VDS= V, VGS=0V Gate to Source Leakage Current IGSS Cutoff Voltage VGS=±30V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance VGS(off) yfs Static Drain to Source On-State Resistance RDS(on) VDS=10V, ID= A ID= A, VGS=10V 10V 0V L VIN VIN 50 RG 10V 0V ID=5.5A RL=35.7 VOUT PW=10 s D.C. 1% 2SK4088LS 50 VDD=200V VDD 2SK4088LS P.G 50 No. A0556-2/7 ID -- VDS 30 10V VDS=20V Tc= --25 C 25 15V 8V Drain Current, ID -- A Drain Current, ID -- A 25 20 ID -- VGS 30 Tc=25 C 15 10 6V 5 25 C 20 75 C 15 10 5 VGS=5V 20 25 Drain to Source Voltage, VDS -- V Tc=75 C 25 C --25 C 5 7 9 11 13 Gate to Source Voltage, VGS -- V 5 = Tc 3 5 --2 2 25 C 75 C C 1.0 5 7 1.0 2 3 5 7 1.0 2 Drain Current, ID -- A 7 5 20 IT11764 --25 0 25 50 75 100 125 150 IT11766 VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT11767 1.4 IT11768 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 18 IS -- VSD 0.01 0.2 3 SW Time -- ID 1000 16 0.5 3 2 5 3 14 Case Temperature, Tc -- C 7 2 12 3 2 1.0 3 0.1 10 0V =1 S G ,V .5A =5 ID 5 10 7 8 1.5 IT11765 VDS=10V 2 6 RDS(on) -- Tc 0 --50 15 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 3 f=1MHz 3 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Static Drain to Source On-State Resistance, RDS(on) -- Static Drain to Source On-State Resistance, RDS(on) -- 1.5 3 4 2.0 2.0 0.5 2 Gate to Source Voltage, VGS -- V ID=5.5A 1.0 0 IT11763 RDS(on) -- VGS 2.5 0 0 30 --25 C 15 C 10 25 C 5 Tc=7 5 0 0 td (off) 100 7 tf tr 5 td(on) 3 2 Ciss 1000 7 5 3 Coss 2 100 7 5 Crss 3 2 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT11769 10 0 10 20 30 40 Drain to Source Voltage, VDS -- V 50 IT11770 No. A0556-3/7 IDP=40A(PW 10 s) 10 0 IDc(*1)=11A Drain Current, ID -- A Gate to Source Voltage, VGS -- V VDS=200V ID=11A Ambient Temperature, Ta -- C IT11730 Ambient Temperature, Ta -- C IT10478 pe ra 1m s 10 ms tio n 1. Shows chip capability 2. Our ideal heat dissipation condition Drain to Source Voltage, VDS -- V IT16933 Case Temperature, Tc -- C IT11731 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W IT11771 DC o ms s s Operation in this area is limited by RDS(on). Tc=25 C Single pulse Total Gate Charge, Qg -- nC 10 0 IDpack(*2)=7.5A 10 No. A0556-4/7 2SK4088LS-1E No. A0556-5/7 2SK4088LS-1E No. A0556-6/7 Note on usage : Since the 2SK4088LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A0556-7/7