2SK4097LS
Ordering number : ENA0775A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4097LS
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
IDc*1
Drain Current (DC)
IDpack*2
Drain Current (Pulse)
Conditions
Ratings
VDSS
VGSS
IDP
Unit
500
V
±30
V
Limited only by maximum temperature
9.5
A
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
8.3
A
PW≤10µs, duty cycle≤1%
38
A
2.0
W
Allowable Power Dissipation
PD
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
280
mJ
Avalanche Current *5
IAV
9.5
A
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=5mH, IAV=9.5A
*5 L≤5mH, single pulse
Marking : K4097
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1007 TI IM TC-00000933 / 60607QB TI IM TC-00000726 No. A0775-1/5
2SK4097LS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
Cutoff Voltage
VGS(off)
⏐yfs⏐
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
RDS(on)
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
Ratings
Conditions
min
ID=10mA, VGS=0V
VDS=400V, VGS=0V
typ
Unit
max
500
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
V
100
µA
±100
nA
5
V
0.65
Ω
3
VDS=10V, ID=5A
ID=5A, VGS=10V
3
6
S
0.5
VDS=30V, f=1MHz
VDS=30V, f=1MHz
750
pF
150
pF
VDS=30V, f=1MHz
See specified Test Circuit.
35
pF
16
ns
See specified Test Circuit.
44
ns
See specified Test Circuit.
102
ns
See specified Test Circuit.
47
ns
VDS=200V, VGS=10V, ID=9.5A
VDS=200V, VGS=10V, ID=9.5A
30
nC
5.2
nC
VDS=200V, VGS=10V, ID=9.5A
IS=9.5A, VGS=0V
17
nC
0.9
1.2
V
Package Dimensions
unit : mm (typ)
7509-002
4.5
10.0
2.8
0.6
16.1
16.0
7.2
3.5
3.2
1.2
14.0
3.6
0.9
1.2
0.75
0.7
1 : Gate
2 : Drain
3 : Source
2.4
1 2 3
2.55
SANYO : TO-220FI(LS)
2.55
Switching Time Test Circuit
VIN
Avalanche Resistance Test Circuit
VDD=200V
L
10V
0V
≥50Ω
RG
ID=5A
RL=40Ω
VIN
D
VOUT
PW=10µs
D.C.≤0.5%
2SK4097LS
10V
0V
G
50Ω
VDD
2SK4097LS
P.G
RGS=50Ω
S
No. A0775-2/5
2SK4097LS
ID -- VDS
30
ID -- VGS
30
VDS=20V
Tc=25°C
10V
8V
20
15
10
6V
5
Tc= --25°C
25
15V
Drain Current, ID -- A
Drain Current, ID -- A
25
25°C
20
75°C
15
10
5
VGS=5V
0
0
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
8
10
12
14
16
18
20
IT12373
RDS(on) -- Tc
1.2
1.0
Tc=75°C
0.8
0.6
25°C
0.4
--25°C
0.2
6.5
7.0
7.5
8.0
8.5
9.0
9.5
0.2
Source Current, IS -- A
C
75°
2
1.0
7
3
5
7 1.0
2
3
5
7
2
10
Drain Current, ID -- A
75
100
125
150
IT12375
3
2
1.0
7
5
3
2
0.1
7
5
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
IT12376
1.4
IT12377
Ciss, Coss, Crss -- VDS
5
VDD=200V
VGS=10V
5
50
10
7
5
0.01
0.2
3
SW Time -- ID
7
25
IS -- VSD
3
2
5
2
0
--25
VGS=0V
3
2
5
--2
3
0.4
5
°C
=
Tc
0.6
Case Temperature, Tc -- °C
C
25°
5
=1
S
IT12374
VDS=10V
7
A
=5
ID
VG
0
--50
10.0
⏐yfs⏐ -- ID
10
,
0V
0.8
25°C
6.0
1.0
°C
5.5
1.2
--25°C
1.4
1.4
Tc=7
5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
1.6
2
Forward Transfer Admittance, ⏐yfs⏐ -- S
6
Gate-to-Source Voltage, VGS -- V
1.6
Gate-to-Source Voltage, VGS -- V
f=1MHz
3
2
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
4
ID=5A
1.8
3
0.1
2
IT12372
RDS(on) -- VGS
2.0
0
5.0
0
30
2
td (off)
100
7
tf
5
3
tr
3
Coss
2
100
7
5
Crss
3
td(on)
2
Ciss
1000
7
5
2
10
10
0.1
2
3
5
7 1.0
2
3
5
7 10
Drain Current, ID -- A
2
3
5
IT12378
0
10
20
30
40
Drain-to-Source Voltage, VDS -- V
50
IT12379
No. A0775-3/5
2SK4097LS
VGS -- Qg
10
VDS=200V
ID=9.5A
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
5
10
15
20
25
Total Gate Charge, Qg -- nC
1.5
1.0
0.5
10
DC
1.0
7
5
3
2
10
µs
0µ
IDpack(*2)=8.3A
1m
10 ms
0m
s
op
er
ati
on
s
s
Operation in
this area is
limited by RDS(on).
0.1
7
5
3
2
*1. Shows chip capability
*2. SANYO’s ideal heat dissipation condition
Tc=25°C
Single pulse
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
5 71000
IT12381
PD -- Tc
40
2.0
10
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
30
PW≤10µs
IDc(*1)=9.5A
10
7
5
3
2
IT12380
35
30
25
20
15
10
5
0
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT12337
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT12382
EAS -- Ta
120
Avalanche Energy derating factor -- %
IDP=38A
0.01
0.1
PD -- Ta
2.5
ASO
7
5
3
2
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A0775-4/5
2SK4097LS
Note on usage : Since the 2SK4097LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of October, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0775-5/5