2SK4098FS

2SK4098FS Ordering number : ENA1375A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4098FS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions VDSS VGSS IDc *1 Ratings Unit 600 Limited only by maximum temperature Tch=150°C IDpack *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 IDP PW≤10μs, duty cycle≤1% V ±30 V 7 A 6 A 28 A 2.0 W Allowable Power Dissipation PD 33 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 98 mJ 6 A Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Note : *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=5mH, IAV=6A *5 L≤5mH, Single pulse Marking : K4098FS Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010 TK IM TC-00002276 / N2608QB MS IM TC-00001726 No. A1375-1/5 2SK4098FS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance Input Capacitance Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Ratings min typ Unit max 600 V 100 μA ±100 nA VDS=10V, ID=1mA 3 5 2.1 RDS(on) VDS=10V, ID=3.5A ID=3.5A, VGS=10V Ciss VDS=30V, f=1MHz 600 pF Output Capacitance Coss VDS=30V, f=1MHz 120 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns Rise Time tr See specified Test Circuit. 34 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 80 ns Fall Time tf See specified Test Circuit. 30 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=7A 23.5 nC Gate-to-Source Charge Qgs 4.5 nC 4.2 0.9 Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=7A VDS=200V, VGS=10V, ID=7A Diode Forward Voltage VSD IS=7A, VGS=0V V S 1.1 13.5 Ω nC 0.9 1.2 V Package Dimensions unit : mm (typ) 7528-001 4.7 10.16 3.18 3.23 15.8 15.87 6.68 3.3 2.54 12.98 2.76 1.47 MAX 0.8 1 2 3 2.54 1 : Gate 2 : Drain 3 : Source 0.5 2.54 SANYO : TO-220F-3FS Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=200V PW=10μs D.C.≤0.5% L ID=3.5A RL=57Ω VGS=10V ≥50Ω RG VOUT D 10V 0V G P.G RGS=50Ω S 2SK4098FS 50Ω VDD 2SK4098FS No. A1375-2/5 2SK4098FS ID -- VDS 20 Tc=25°C 18 Drain Current, ID -- A Drain Current, ID -- A 12 10 8 6 6V 4 25∞ 25°CC 14 12 75°C 10 8 6 4 VGS=5V 2 0 Tc= --25°C 16 8V 14 VDS=20V 18 15V 10V 16 ID -- VGS 20 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 0 30 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V IT12383 RDS(on) -- VGS 3.0 2 RDS(on) -- Tc 3.0 20 IT12384 2.5 2.0 1.5 Tc=75°C 1.0 25°C --25°C 0.5 6.5 7.0 7.5 8.0 8.5 9.0 Gate-to-Source Voltage, VGS -- V | yfs | -- ID °C -25 =- Tc C 75° 2 1.0 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 0.01 0.2 3 150 IT12386 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V VDD=200V VGS=10V Ciss, Coss, Crss -- VDS 1.4 IT12388 f=1MHz 2 1000 Ciss, Coss, Crss -- pF 3 2 td (off ) 100 7 tf 5 tr 3 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 Ciss 7 5 3 2 Coss 100 7 5 Crss 3 td(on) 2 0.1 125 VGS=0V 3 5 10 100 IS -- VSD IT12387 SW Time -- ID 7 75 3 2 3 2 5 50 1.0 7 5 3 3 25 3 2 5 2 0 3 2 0.1 7 5 7 2 0.1 --25 10 7 5 C 25° 3 0.5 Case Temperature, Tc -- °C 10 5 = V GS 1.0 IT12385 VDS=10V 7 =3 , ID V 0 1 0 --50 10.0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 9.5 .5A 1.5 --25°C 6.0 2.0 25°C 5.5 2.5 Tc=7 5°C 0 5.0 Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=3.5A 2 10 2 3 IT12389 10 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT12390 No. A1375-3/5 2SK4098FS VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 5 10 15 20 25 Total Gate Charge, Qg -- nC 10 2.0 1.5 1.0 0.5 1m s ms 0m IDpack(*2)=6A DC 1.0 7 5 3 2 op er Tc=25°C Single pulse 2 3 μs ati Operation in this area is limited by RDS(on). 0.1 7 5 3 2 10 0μ s 10 s on *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 10 PD -- Tc 40 5 71000 IT14242 35 33 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12337 EAS -- Ta 120 Avalanche Energy derating factor -- % PW≤10μs IDc(*1)=7A 10 7 5 3 2 IT12391 PD -- Ta 2.5 IDP=28A 0.01 0.1 0 0 ASO 7 5 3 2 VDS=200V ID=7A 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12338 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1375-4/5 2SK4098FS Note on usage : Since the 2SK4098FS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No. A1375-5/5