DATA SHEET
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N-Channel JFET
40 V, 55 to 95 mA, 0.10 ms, CP
2SK545
SC−59 / CP3
CASE 318BJ
Features
MARKING DIAGRAM
1
B11 = Specific Device Code
Applications
• Impedance Converter Applications
• Infrared Sensor
ELECTRICAL CONNECTION
3
ABSOLUTE MAXIMUM RATINGS (at TA = 25°C)
Parameter
Symbol
Ratings
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Drain Voltage
VGDS
−40
V
Gate Current
IG
10
mA
Drain Current
ID
1
mA
Allowable Power Dissipation
PD
100
mW
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
−55 to +125
°C
November, 2021 − Rev. 1
1 : Source
2 : Drain
3 : Gate
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
B11
LOT No.
Small IGSS
Small Ciss
Ultrasmall Package permitting 2SK545−applied Sets to be Compact
This is a Pb−Free Device
LOT No.
•
•
•
•
1
2
ORDERING INFORMATION
Device
Package
2SK545−11D− SC−59/CP3
TB−E
(Pb−Free)
Shipping†
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
2SK545/D
2SK545
Table 1. ELECTRICAL CHARACTERISTICS (at TA = 25°C)
Parameter
Symbol
Conditions
V(BR)GDS
ID = −10 mA, VDS = 0 V
Gate Cutoff Current
IGSS
VGS = −20 V, VDS = 0 V
Drain Current
IDSS
VDS = 10 V, VGS = 0 V
Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
Gate−to−Drain Breakdown Voltage
Min
Typ
Max
Unit
−40
V
55
−1.2
Forward Transfer Admittance
|yfs|
VDS = 10 V, VGS = 0 V, f = 1 kHz
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
0.05
−500
pA
95
mA
−4.0
V
0.10
ms
VDS = 10 V, VGS = 0 V, f = 1 MHz
1.7
pF
VDS = 10 V, VGS = 0 V, f = 1 MHz
0.7
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
100
100
90
90
VGS = 0 V
80
ID, Drain Current (mA)
ID, Drain Current (mA)
TYPICAL CHARACTERISTICS
70
−0.2 V
60
50
−0.4 V
40
30
−0.6 V
20
80
−25°C
70
60
30
0
2
4
6
8
10
12
14
75°C
40
10
−1.2 V
−1.0 V
0
TA = 25°C
50
20
−0.8 V
10
VDS = 10 V
IDSS = 75 mA
16
18
0
−1.6
20
VDS, Drain−to−Source Voltage (V)
|yfs|, Forward Transfer Admittance (ms)
VGS(off), Cutoff Voltage (V)
VDS = 10 V
ID = 1 mA
1.3
1.2
1.1
1.0
60
70
80
−1.0
−0.8
−0.6
−0.4
−0.2
0
Figure 2. Drain Current vs. Gate−to−Source
Voltage
1.5
0.9
50
−1.2
VGS, Gate−to−Source Voltage (V)
Figure 1. Drain Current vs. Drain−to−Source
Voltage
1.4
−1.4
90
100
0.14
VDS = 10 V
VGS = 0 V
f = 1 kHz
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
50
IDSS, Drain Current (mA)
60
70
80
90
100
IDSS, Drain Current (mA)
Figure 3. Cutoff Voltage vs. Drain Current
Figure 4. Forward Transfer Admittance vs. Drain
Current
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2
2SK545
TYPICAL CHARACTERISTICS
10
120
VGS = 0 V
f = 1 MHz
100
80
60
40
20
0
Crss, Reverse Transfer Capacitance (pF)
Ciss, Input Capacitance (pF)
PD, Power Dissipation (mW)
7
5
3
2
1.0
7
5
0
20
40
60
80
100
120
3
1.0
140
2
3
5
7
10
2
3
5
7
100
TA, Ambient Temperature (5C)
VDS, Drain−to−Source Voltage (V)
Figure 5. Power Dissipation vs. Ambient
Temperature
Figure 6. Input Capacitance vs. Drain−to−Source
Voltage
5
VGS = 0 V
f = 1 MHz
3
2
1.0
7
5
3
2
0.1
1.0
2
3
5
7
10
23
57
100
VDS, Drain−to−Source Voltage (V)
Figure 7. Reverse Transfer Capacitance vs.
Drain−to−Source Voltage
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−59 / CP3
CASE 318BJ
ISSUE O
DATE 09 JAN 2015
SCALE 2:1
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS,
OR GATE BURRS SHALL NOT EXCEED 0.20 PER SIDE.
4. DIMENSIONS D AND E1 ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.10 AND 0.20 FROM THE TIP.
L
3X
3
E1
E
1
2
e
3X
b
0.10
TOP VIEW
M
C A
A
3X
A2
A1
C
SIDE VIEW
SEATING
PLANE
END VIEW
3X
GENERIC
MARKING DIAGRAM
1
XXX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
3X
1.00
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3.40
0.95
PITCH
MILLIMETERS
MIN
MAX
0.95
1.35
0.00
0.10
0.20
0.40
0.35
0.50
0.10
0.20
2.75
3.05
2.30
2.70
1.35
1.65
0.95 BSC
0.35
0.75
XXX MG
G
RECOMMENDED
SOLDERING FOOTPRINT*
0.80
c
DIM
A
A1
A2
b
c
D
E
E1
e
L
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON94458F
SC−59 / CP3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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