Ordering number : EN4423D
3SK263
N-Channnel Dual Gate MOSFET
http://onsemi.com
15V,30mA,PG=21dB,NF=1.1dB, CP4
Features
Enhancement type
Small noise figure
• Small cross modulation
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDS
15
V
Gate1-to-Source Voltage
VG1S
±8
V
Gate2-to-Source Voltage
VG2S
±8
V
Drain Current
ID
30
mA
Allowable Power Dissipation
PD
200
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
--55 to +125
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7014A-006
• Package
: CP4
• JEITA, JEDEC
: SC-61, SC-82AB, SOT-143, SOT-343
• Minimum Packing Quantity : 3,000 pcs./reel
3SK263-5-TG-E
2.9
0.5
0.4
4
0.1
Packing Type: TG Marking
3
2.5
1.5
LOT No.
RANK
LOT No.
RJ
0.5
TG
1
2
0.05
1.1
0.3
0.95 0.85
0.6
1 : Drain
2 : Source
3 : Gate1
4 : Gate2
CP4
Electrical Connection
1
3
4
2
Semiconductor Components Industries, LLC, 2014
June, 2014
60914HK TA-4314/TKIM/82599TH(KT)/20696YK/63094MT(KOTO) No.4423-1/4
3SK263
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Drain-to-Source Voltage
VDS
VG1S=0V, VG2S=0V, ID=100mA
Gate1-to-Source Cutoff Voltage
VG1S(off)
VDS=6V, VG2S=4V, ID=100mA
0
0.7
Gate2-to-Source Cutoff Voltage
VG2S(off)
IG1SS
VDS=6V, VG1S=3V, ID=100mA
VG1S=±6V, VG2S=VDS=0V
0.1
0.9
Gate1-to-Source Leakage Current
Gate2-to-Source Leakage Current
IG2SS
VG2S=±6V, VG1S=VDS=0V
Zero-Gate Voltage Drain Current
IDSX
VDS=6V, VG1S=1.5V, VG2S=4V
VDS=6V, ID=10mA, VG2S=4V, f=1kHz
Forward Transfer Admittance
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Power Gain
PG
VDS=6V, ID=10mA, VG2S=4V, f=200MHz
Noise Figure
NF
VDS=6V, ID=10mA, VG2S=4V, f=200MHz
15
V
*5
1.3
1.6
V
nA
±50
nA
*12
mA
14
0.015
18
mS
pF
0.03
21
1.1
V
±50
2.7
VDS=6V, f=1MHz, VG1S=0V, VG2S=4V
Unit
pF
dB
2.2
dB
* : The 3SK263 is classified by IDSX as follows : (unit : mA)
Rank
IDSX
5
5.0 to 12.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
PG, NF Specified Test Circuit
f=200MHz
~20pF
IN
50Ω
1000pF
23T
4
47pF
VG1S
1000pF
15kΩ
21T
2
~20pF
12Ω
~20pF
OUT
50Ω
11T
2
1000pF
VDS
VG2S
L : 1mmØ enamel wire 10mmØ
Ordering Information
Device
3SK263-5-TG-E
Package
Shipping
memo
CP4
3,000pcs./reel
Pb-Free
No.4423-2/4
3SK263
ID -- VDS
2.0V
1.2V
4
0
2
4
6
8
10
V
2.5
S=
V
G1
1.75V
5V
3.
4.0
V
V
10
15
20
VDS=6V
VG1S : VG2S=4V
ID=10mA
f=200MHz
20
3
NF
0
1
1
V
1.0V
0
0.5
1.0
1.5
2.0
Ciss -- VG2S
2.5
ITR02877
VDS=6V
VG1S : VG2S=4V
ID=10mA
f=1MHz
5
3
2
2
3
4
--1
0
5
Gate2-to-Source Voltage, VG2S -- V
0
6
ITR02880
1
2
3
PD -- Ta
240
PG
2
0
4
3.5 .0V
V
Gate2-to-Source Voltage, VG2S -- V
4
10
--10
1.5
5
ITR02878
PG, NF -- VG2S
30
10
1.0
25
Allowable Power Dissipation, PD -- mW
5
Noise Figure, NF -- dB
0
Drain Current, ID -- mA
Power Gain, PG -- dB
Input Capacitance, Ciss -- pF
4.5V
V
2.5
V
1.5
0
VG
V
2.0
5
=6
2S
7
3.0
10
1.0V
Forward Transfer Admittance, | yfs | -- mS
15
.0V
15
Gate1-to-Source Voltage, VG1S -- V
20
5.5V 5.0V
5.5V 5.0V 4.5V
ITR02876
VDS=6V
f=1kHz
=6.0V
VG2S
20
0
5
VDS=6V
f=1kHz
V
4
| yfs | -- ID
25
| yfs | -- VG1S
2.5
ITR02875
0V
0.75V
3
2.0
3.
1.0V
Gate2-to-Source Voltage, VG2S -- V
1.5
0V
1.25V
5
2
1.0
2.5
Drain Current, ID -- mA
2.0V
1.5V
1
0.5
2.
Forward Transfer Admittance, | yfs | -- mS
V
2.25
10
1.0V
Gate1-to-Source Voltage, VG1S -- V
25
20
0
0
ITR02874
ID -- VG2S
0
1.5V
0.5V
0
VDS=6V
15
2.0V
0.8V
Drain-to-Source Voltage, VDS -- V
25
10
5
1.0V
VG1S=0.6V
2.5V
.0V
1.4V
V
3.0
S =6
1.6V
15
V
G2
1.8V
8
3.5V
4.0V
4.5V
5.0V
5.5V
20
12
0
VDS=6V
2.2V
2.4V
Drain Current, ID -- mA
16
ID -- VG1S
25
VG2S=4.0V
Drain Current, ID -- mA
20
4
ITR02879
200
160
120
80
40
0
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
ITR02881
No.4423-3/4
3SK263
Outline Drawing
3SK263-5-TG-E
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
0.8
1.2
1.0
2.4
1.9
1.8
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PS No.4423-4/4
