4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
6-Pin DIP General Purpose Photodarlington Optocoupler
Features
Description
■ High Sensitivity to Low Input Drive Current
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and
TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
■ Meets or Exceeds All JEDEC Registered
Specifications
■ Safety and Regulatory Approvals:
– UL1577, 4,170 VACRMS for 1 Minute
■ DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■ Low Power Logic Circuits
■ Telecommunications Equipment
■ Portable Electronics
■ Solid State Relays
■ Interfacing Coupling Systems of Different Potentials
and Impedances
Schematic
ANODE 1
6 BASE
6
1
CATHODE 2
N/C 3
5 COLLECTOR
4 EMITTER
6
1
6
1
Figure 2. Package Outlines
Figure 1. Schematic
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
December 2014
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Characteristics
< 150 VRMS
I–IV
< 300 VRMS
I–IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over-Voltage
VPR
Parameter
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥ 10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.5
mm
TS
Case Temperature(1)
175
°C
IS,INPUT
Current(1)
350
mA
800
mW
Input
PS,OUTPUT Output
RIO
Power(1)
Insulation Resistance at TS, VIO =
500 V(1)
>
109
Ω
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
2
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Unit
-40 to +125
°C
TOTAL DEVICE
TSTG
Storage Temperature
Operating Temperature
-40 to +100
°C
Junction Temperature
-40 to +125
°C
260 for 10 seconds
°C
Total Device Power Dissipation @ TA = 25°C
270
mW
Derate Above 25°C
3.3
mW/°C
IF
Continuous Forward Current
80
mA
VR
Reverse Voltage
3
V
TOPR
TJ
TSOL
PD
Lead Solder Temperature
EMITTER
IF(pk)
PD
Forward Current – Peak (300 µs, 2% Duty Cycle)
3.0
A
LED Power Dissipation @ TA = 25°C
120
mW
Derate above 25°C
2.0
mW/°C
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage
30
V
BVCBO
Collector-Base Breakdown Voltage
30
V
BVECO
Emitter-Collector Breakdown Voltage
5
V
Detector Power Dissipation @ TA = 25°C
150
mW
Derate Above 25°C
2.0
mW/°C
Continuous Collector Current
150
mA
PD
IC
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
3
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Absolute Maximum Ratings
TA = 25°C Unless otherwise specified.
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
1.2
1.5
V
1.2
1.5
V
EMITTER
4NXXM
VF
Input Forward Voltage(2)
IR
Reverse Leakage Current(2)
C
Capacitance(2)
IF = 10 mA
H11B1M,
TIL113M
VR = 3.0 V
4NXXM
0.001
100
µA
VR = 6.0 V
H11B1M,
TIL113M
0.001
10
µA
All
150
pF
VF = 0V, f = 1.0 MHz
0.8
DETECTOR
BVCEO
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0
Voltage(2)
BVCBO
Collector-Base Breakdown
Voltage(2)
BVECO
Emitter-Collector Breakdown
IE = 100 µA, IB = 0
Voltage(2)
ICEO
Collector-Emitter Dark
Current(2)
IC = 100 µA, IE = 0
VCE = 10 V, Base Open
4NXXM,
TIL113M
30
60
V
H11B1M
25
60
V
All
30
100
V
4NXXM
5.0
10
V
H11B1M,
TIL113M
7
10
V
All
1
100
nA
Notes:
2. Indicates JEDEC registered data.
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
4
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Electrical Characteristics
TA = 25°C Unless otherwise specified.
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
4N32M,
4N33M
50 (500)
mA (%)
4N29M,
4N30M
10 (100)
mA (%)
IF = 1 mA, VCE = 5 V
H11B1M
5 (500)
mA (%)
IF = 10 mA, VCE = 1 V
TIL113M
30 (300)
mA (%)
DC CHARACTERISTICS
IC(CTR)
VCE(SAT)
Collector Output
Current(3)(4)(5)
Saturation Voltage(3)(5)
IF = 10 mA, VCE = 10 V,
IB = 0
IF = 8 mA, IC = 2.0 mA
4NXXM
1.0
V
TIL113M
1.25
V
IF = 1 mA, IC = 1 mA
H11B1M
1.0
V
IF = 200 mA, IC = 50 mA,
VCC = 10 V, RL = 100 Ω
4NXXM,
TIL113M
5.0
µs
IF = 10 mA, VCE = 10 V,
RL = 100 Ω
H11B1M
AC CHARACTERISTICS
ton
toff
Turn-on Time
Turn-off Time
IF = 200 mA, IC = 50 mA,
VCC = 10 V, RL = 100 Ω
IF = 10 mA, VCE = 10 V,
RL = 100 Ω
BW
25
µs
4N32M,
4N33M,
TIL113M
100
µs
4N29M,
4N30M
40
µs
H11B1M
Bandwidth(6)(7)
18
µs
30
kHz
Notes:
3. Indicates JEDEC registered data.
4. The current transfer ratio(IC / IF) is the ratio of the detector collector current to the LED input current.
5. Pulse test: pulse width = 300 µs, duty cycle ≤ 2.0% .
6. IF adjusted to IC = 2.0 mA and IC = 0.7 mA rms.
7. The frequency at which IC is 3 dB down from the 1 kHz value.
Isolation Characteristics
Symbol
Characteristic
Test Conditions
VISO
Input-Output Isolation Voltage t = 1 Minute
CISO
Isolation Capacitance
RISO
Isolation Resistance
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
Min.
Typ.
4170
VI-O = 0 V, f = 1 MHz
VI-O = ±500 VDC, TA = 25°C
Unit
VACRMS
0.2
1011
Max.
pF
Ω
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Electrical Characteristics (Continued)
1.6
1.7
1.4
1.6
1.2
NORMALIZED CTR
VF - FORWARD VOLTAGE (V)
1.8
1.5
1.4
TA = -55°C
1.3
TA = 25°C
1.2
VCE = 5.0 V
TA = 25°C
Normalized to
IF = 10 mA
1.0
0.8
0.6
0.4
TA = 100°C
1.1
0.2
1.0
0.0
1
10
0
100
2
4
6
IF - LED FORWARD CURRENT (mA)
10
12
14
16
18
20
Figure 4. Normalized CTR vs. Forward Current
Figure 3. LED Forward Voltage vs. Forward Current
1.4
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1.0
1.2
IF = 5 mA
NORMALIZED CTR
8
IF - FORWARD CURRENT (mA)
1.0
IF = 10 mA
0.8
IF = 20 mA
0.6
Normalized to
IF = 10 mA
TA = 25°C
0.4
0.9
IF = 20 mA
0.8
IF = 10 mA
0.7
IF = 5 mA
0.6
0.5
0.4
0.3
0.2
VCE= 5.0 V
0.1
0.0
0.2
-60
-40
-20
0
20
40
60
80
100
10
100
TA - AMBIENT TEMPERATURE (°C)
Figure 5. Normalized CTR vs. Ambient Temperature
Figure 6. CTR vs. RBE (Unsaturated)
100
1.0
0.9
VCE= 0.3 V
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1000
RBE- BASE RESISTANCE (kΩ)
0.8
IF = 20 mA
0.7
0.6
IF = 10 mA
0.5
0.4
0.3
IF = 5 mA
0.2
TA = 25˚C
10
1
IF = 2.5 mA
0.1
IF = 20 mA
0.01
IF = 5 mA
0.1
0.001
0.01
0.0
10
100
1000
RBE- BASE RESISTANCE (k Ω)
0.1
1
10
IC - COLLECTOR CURRENT (mA)
Figure 7. CTR vs. RBE (Saturated)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
IF = 10 mA
Figure 8. Collector-Emitter Saturation Voltage
vs. Collector Current
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Typical Performance Curves
1000
5.0
NORMALIZED ton - (ton(RBE) / ton(open))
IF = 10 mA
VCC = 10 V
TA = 25°C
SWITCHING SPEED (μs)
100
Toff
10
Tf
Ton
1
Tr
0.1
0.1
4.5
VCC = 10 V
IC = 2 mA
RL = 100 Ω
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
10
100
10
100
R-LOAD RESISTOR (kΩ)
Figure 9. Switching Speed vs. Load Resistor
10000
100000
Figure 10. Normalized ton vs. RBE
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
1.4
1.3
NORMALIZED toff - (toff(RBE) / toff(open))
1000
RBE- BASE RESISTANCE (kΩ)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VCC = 10 V
IC = 2 mA
RL = 100 Ω
0.5
0.4
0.3
0.2
10000
VCE = 10 V
TA = 25°C
1000
100
10
1
0.1
0.01
0.001
0.1
10
100
1000
10000
0
100000
20
RBE- BASE RESISTANCE (kΩ)
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
Figure 11. Normalized toff vs. RBE
Figure 12. Dark Current vs. Ambient Temperature
Switching Time Test Circuit and Waveform
VCC = 10 V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
ton
tf
toff
Adjust IF to produce IC = 2 mA
Figure 13. Switching Time Test Circuit and Waveform
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
7
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Typical Performance Curves (Continued)
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Reflow Profile
300
260°C
280
260
> 245°C = 42 s
240
220
200
180
°C
Time above
183°C = 90 s
160
140
120
1.822°C/s Ramp-up rate
100
80
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 14. Reflow Profile
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
8
Part Number
Package
Packing Method
4N29M
DIP 6-Pin
Tube (50 Units)
4N29SM
SMT 6-Pin (Lead Bend)
Tube (50 Units)
4N29SR2M
SMT 6-Pin (Lead Bend)
Tape and Reel (1000 Units)
4N29VM
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
4N29SVM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
4N29SR2VM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
4N29TVM
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
Note:
8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M,
and TIL113M devices.
Marking Information
1
V
3
4N29
2
X YY Q
6
5
4
Figure 15. Top Mark
Table 1. Top Mark Definitions
1
Fairchild Logo
2
Device Number
3
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4
One-Digit Year Code, e.g., “4”
5
Digit Work Week, Ranging from “01” to “53”
6
Assembly Package Code
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
9
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Ordering Information
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Package Dimensions
Figure 16. 6-pin DIP Through Hole
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
10
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Package Dimensions (Continued)
Figure 17. 6-pin DIP Surface Mount
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
11
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
Package Dimensions (Continued)
Figure 18. 6-pin DIP 0.4” Lead Spacing
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
12
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
13
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.4
