4N32TVM

DATA SHEET www.onsemi.com 6-Pin DIP General Purpose Photodarlington Optocoupler PDIP6 CASE 646BX 6 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M 1 Description 1 The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ♦ 1 UL1577, 4,170 VACRMS for 1 Minute DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage CASE 646BZ MARKING DIAGRAM ON Applications • • • • • CASE 646BY PDIP6 T SUFFIX 6 • High Sensitivity to Low Input Drive Current • Meets or Exceeds All JEDEC Registered Specifications • Safety and Regulatory Approvals: ♦ PDIP6 S SUFFIX 6 Low Power Logic Circuits Telecommunications Equipment Portable Electronics Solid State Relays Interfacing Coupling Systems of Different Potentials and Impedances XXXXX VXYYQ ON = Logo XXXXX = Specific Device Code V = DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) X = One−Digit Year Code YY = Digit Work Week Q = Assembly Package Code SCHEMATIC ANODE 1 CATHODE 2 N/C 3 6 BASE 5 COLLECTOR 4 EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2007 April, 2022 − Rev. 2 1 Publication Order Number: H11B1M/D 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Characteristics Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage VPR Parameter 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4” Lead Spacing) ≥10 mm DTI Distance Through Insulation (Insulation Thickness) ≥0.5 mm TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 350 mA PS,OUTPUT Output Power (Note 1) 800 mW Insulation Resistance at TS, VIO = 500 V (Note 1) >109 W RIO 1. Safety limit values – maximum values allowed in the event of a failure. www.onsemi.com 2 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit TOTAL DEVICE TSTG Storage Temperature −40 to +125 °C TOPR Operating Temperature −40 to +100 °C Junction Temperature −40 to +125 °C 260 for 10 seconds °C TJ TSOL PD Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C 270 mW Derate Above 25°C 3.3 mW/°C IF Continuous Forward Current 80 mA VR Reverse Voltage 3 V Forward Current – Peak (300 ms, 2% Duty Cycle) 3.0 A LED Power Dissipation @ TA = 25°C 120 mW Derate Above 25°C 2.0 mW/°C BVCEO Collector−Emitter Breakdown Voltage 30 V BVCBO Collector−Base Breakdown Voltage 30 V BVECO Emitter−Collector Breakdown Voltage 5 V EMITTER IF(pk) PD DETECTOR PD IC Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 2.0 mW/°C Continuous Collector Current 150 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Device Min Typ Max Unit 4NXXM − 1.2 1.5 V H11B1M, TIL113M 0.8 1.2 1.5 V VR = 3.0 V 4NXXM − 0.001 100 mA VR = 6.0 V H11B1M, TIL113M − 0.001 10 mA All − 150 − pF 4NXXM, TIL113M 30 60 − V H11B1M 25 60 − V EMITTER VF IR C Input Forward Voltage (Note 2) Reverse Leakage Current (Note 2) IF = 10 mA Capacitance (Note 2) VF = 0 V, f = 1.0 MHz Collector−Emitter Breakdown Voltage (Note 2) IC = 1.0 mA, IB = 0 DETECTOR BVCEO BVCBO Collector−Base Breakdown Voltage (Note 2) IC = 100 mA, IE = 0 All 30 100 − V BVECO Emitter−Collector Breakdown Voltage (Note 2) IE = 100 mA, IB = 0 4NXXM 5.0 10 − V H11B1M, TIL113M 7 10 − V Collector−Emitter Dark Current (Note 2) VCE = 10 V, Base Open All − 1 100 nA ICEO Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data. www.onsemi.com 3 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Device Min Typ Max Unit IF = 10 mA, VCE = 10 V, IB = 0 4N32M, 4N33M 50 (500) − − mA (%) 4N29M, 4N30M 10 (100) − − mA (%) IF = 1 mA, VCE = 5 V H11B1M 5 (500) − − mA (%) IF = 10 mA, VCE = 1 V TIL113M 30 (300) − − mA (%) IF = 8 mA, IC = 2.0 mA 4NXXM − − 1.0 V TIL113M − − 1.25 V IF = 1 mA, IC = 1 mA H11B1M − − 1.0 V IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 W 4NXXM, TIL113M − − 5.0 ms IF = 10 mA, VCE = 10 V, RL = 100 W H11B1M − 25 − ms IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 W 4N32M, 4N33M, TIL113M − − 100 ms 4N29M, 4N30M − − 40 ms H11B1M − 18 − ms − 30 − kHz DC CHARACTERISTICS IC(CTR) VCE (SAT) Collector Output Current (Note 3) (Note 4) (Note 5) Saturation Voltage (Note 3) (Note 5) AC CHARACTERISTIC tON tOFF Turn−on Time Turn−off Time IF = 10 mA, VCE = 10 V, RL = 100 W BW Bandwidth (Note 6) (Note 7) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Indicates JEDEC registered data. 4. The current transfer ratio(IC / IF) is the ratio of the detector collector current to the LED input current. 5. Pulse test: pulse width = 300 ms, duty cycle v 2.0%. 6. IF adjusted to IC = 2.0 mA and IC = 0.7 mA rms. 7. The frequency at which IC is 3 dB down from the 1 kHz value. ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions VISO Input−Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance VI−O = 0 V, f = 1 MHz RISO Isolation Resistance VI−O = ±500 VDC, TA = 25°C Min Typ Max Unit 4170 − − VACRMS − 0.2 − pF 1011 − − W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M 1.8 1.6 1.7 1.4 1.6 1.2 Normalized CTR VF – Forward Voltage (V) TYPICAL PERFORMANCE CURVES 1.5 1.4 TA = −55_C 1.3 1.2 1.0 0.8 0.6 0.4 0.2 TA = 100_C 1 10 IF – LED Forward Current (mA) 0.0 100 Figure 1. LED Forward Voltage vs. Forward Current 2 1.0 Normalized CTR (CTRRBE / CTRRBE(OPEN)) IF = 5 mA 1.0 IF = 10 mA 0.8 0.6 IF = 20 mA 0.2 −60 Normalized to IF = 10 mA TA = 25_C −40 −20 4 0.7 20 40 60 80 0.5 IF = 5 mA 0.4 0.3 0.2 0.0 100 VCE = 5.0 V 100 10 Figure 4. CTR vs. RBE (Unsaturated) 100 1.0 VCE = 0.3 V VCE(SAT) − Collector−Emitter Saturation Voltage (V) Normalized CTR (CTRRBE / CTRRBE(OPEN)) IF = 20 mA IF = 5 mA 0.7 0.6 0.5 IF = 10 mA 0.4 0.3 0.2 10 TA = 25°C 1 IF = 2.5 mA 0.1 IF = 20 mA 0.01 0.1 0.0 1000 RBE − Base Resistance (kW) Figure 3. Normalized CTR vs. Ambient Temperature 0.8 20 IF = 10 mA 0.6 0.1 0 18 0.8 TA − Ambient Temperature (5C) 0.9 6 8 10 12 14 16 IF – Forward Current (mA) IF = 20 mA 0.9 1.2 Normalized CTR 0 Figure 2. Normalized CTR vs. Forward Current 1.4 0.4 Normalized to IF = 10 mA 1.0 TA = 25_C 1.1 VCE = 5.0 V TA = 25°C 0.001 10 100 RBE − Base Resistance (kW) 1000 Figure 5. CTR vs. RBE (Saturated) IF = 5 mA 0.01 IF = 10 mA 0.1 1 IC − Collector Current (mA) 10 Figure 6. Collector−Emitter Saturation Voltage vs. Collector Current www.onsemi.com 5 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M TYPICAL PERFORMANCE CURVES (continued) 100 5.0 IF = 10 mA VCC = 10 V TA = 25_C Normalized ton − (ton(RBE) / ton(open)) Switching Speed (ms) 1000 Toff 10 Tf Ton 1 Tr 0.1 0.1 1 10 VCC = 10 V IC = 2 mA RL = 100 W 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 100 10 10000 100000 Figure 8. Normalized ton vs. RBE 10000 VCE = 10 V 1000 TA = 25_C ICEO − Collector−Emitter Dark Current (nA) Normalized toff − (toff(RBE) / toff(open)) Figure 7. Switching Speed vs. Load Resistor 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1000 RBE – Base Resistance (kW) R – Load Resistor (kW) VCC = 10 V IC = 2 mA RL = 100 W 10 100 1000 10000 100 10 1 0.1 0.01 0.001 100000 0 20 RBE – Base Resistance (kW) 40 60 80 Figure 9. Normalized toff vs. RBE Figure 10. Dark Current vs. Ambient Temperature SWITCHING TIME TEST CIRCUIT AND WAVEFORMS WAVE FORMS TEST CIRCUIT VCC = 10 V INPUT PULSE IC IF INPUT 100 TA – Ambient Temperature (_C) RL 10% OUTPUT OUTPUT PULSE 90% RBE tr Adjust IF to produce IC = 2 mA t on Figure 11. Switching Time Test Circuit and Waveforms www.onsemi.com 6 tf t off 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M REFLOW PROFILE 260 240 Temperature (5C) 220 200 TP TL 180 160 140 Max. Ramp−up Rate = 3°C/s Max. Ramp−down Rate = 6°C/s tP Tsmax tL Preheat Area Tsmin ts 120 100 80 60 40 20 0 120 240 360 Time 25°C to Peak Time (s) Figure 12. Reflow Profile REFLOW PROFILE Profile Feature Pb−Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60−120 s Ramp−up Rate (tL to tP) 3°C/s max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60−150 s Peak Body Package Temperature 260°C +0°C / −5°C Time (tP) within 5°C of 260°C 30 s Ramp−down Rate (TP to TL) 6°C/s max. Time 25°C to Peak Temperature 8 min max. www.onsemi.com 7 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M ORDERING INFORMATION Part Number Package Packing Method† 4N29M DIP 6−Pin 50 Units / Tube 4N29SM SMT 6−Pin (Lead Bend) 50 Units / Tube 4N29SR2M SMT 6−Pin (Lead Bend) 1000 / Tape & Reel 4N29VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option 50 Units / Tube 4N29SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 50 Units / Tube 4N29SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 1000 / Tape & Reel 4N29TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option 50 Units / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M and TIL113M devices. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13449G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B DOCUMENT NUMBER: DESCRIPTION: 98AON13450G PDIP6 8.51x6.35, 2.54P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13451G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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