5HN01C-TB-EX

Ordering number : ENN6637 5HN01C N-Channel Silicon MOSFET 5HN01C Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2091A [5HN01C] 0.4 0.16 0 to 0.1 1 : Gate 2 : Source 3 : Drain 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 3 0.5 • Specifications SANYO : CP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 Gate-to-Source Voltage VGSS ID ±20 V 0.1 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10μs, duty cycle≤1% V 0.4 A 0.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=±16V, VDS=0 VGS(off) ⏐yfs⏐ VDS=10V, ID=100μA VDS=10V, ID=50mA RDS(on)1 RDS(on)2 ID=50mA, VGS=10V ID=30mA, VGS=4V Ratings min typ max 50 Unit V 1 10 μA ±10 μA 2.4 85 120 V mS 5.8 7.5 Ω 7.5 10.5 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82200 TS IM TA-2041 No.6637-1/4 5HN01C Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 6.2 Output Capacitance 4.4 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 1.5 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns Rise Time tr td(off) See specified Test Circuit 11 ns See specified Test Circuit 105 ns tf See specified Test Circuit 75 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA 1.40 Gate Source Charge 0.21 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=100mA 0.34 Diode Forward Voltage VSD IS=100mA, VGS=0 0.85 nC 1.2 V Marking : YC Switching Time Test Circuit 10V 0V VDD=25V VIN VIN PW=10μs D.C.≤1% D ID=50mA RL=500Ω VOUT G 5HN01C P.G 50Ω S ID -- VDS ID -- VGS 0.20 VDS=10V 0V 0.16 .0V 0.06 0.04 2.5V C 0.12 0.10 0.08 0.06 0.04 0.02 0.02 VGS=2.0V 0 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 1.0 0 IT00042 RDS(on) -- VGS 12 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 9 50mA 8 ID=30mA 7 6 5 4 1 2 3 4 5 6 7 4 5 Gate-to-Source Voltage, VGS -- V 8 Gate-to-Source Voltage, VGS -- V 9 2 3 IT00043 RDS(on) -- ID VGS=10V 7 11 0 1 100 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.14 25° V 3.0 10 Drain Current, ID -- A 0V 4. 0.08 Drain Current, ID -- A 6. 0.18 Ta= --25° C 75°C 8.0 V 0.10 10 IT00044 5 3 2 10 Ta=75°C 25°C --25°C 7 5 3 2 1.0 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT00045 No.6637-2/4 5HN01C RDS(on) -- ID 100 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 25°C Ta=75°C 10 7 5 --25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 Drain Current, ID -- A 8 6 4 2 --40 --20 0 20 40 60 80 100 120 140 160 IT00047 IF -- VSD 3 VGS=0 2 25°C 2 25°C Ta= -0.1 75°C 7 5 3 0.1 7 5 3 2 2 2 3 5 7 2 0.1 0.01 0.4 3 td(off) 100 7 5 tf 3 2 tr 10 7 5 td(on) 0.7 0.8 0.9 1.0 1.1 1.2 IT00049 Ciss, Coss, Crss -- VDS 100 7 5 VDD=25V VGS=10V 3 2 0.6 Diode Forward Voltage, VSD -- V IT00048 SW Time -- ID 1000 7 5 0.5 25°C --25°C 3 Ta= 7 5°C 5 Forward Current, IF -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 7 Drain Current, ID -- A Switching Time, SW Time -- ns =4V V GS V , A =10 30m V GS = , A ID 50m I D= Ambient Temperature, Ta -- °C VDS=10V 0.01 0.01 f=1MHz 3 2 10 7 5 Ciss Coss 3 2 Crss 1.0 7 5 3 2 3 2 0.1 1.0 0.01 2 3 5 7 Drain Current, ID -- A 0 0.1 IT00050 10 15 Allowable Power Dissipation, PD -- W 8 7 6 5 4 3 2 1 20 25 30 35 40 45 50 IT00051 PD -- Ta 0.30 VDS=10V ID=0.1A 9 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Sourse Voltage, VGS -- V 10 IT00046 ⏐yfs⏐ -- ID 1.0 12 0 --60 3 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 RDS(on) -- Ta 14 VGS=4V 0.25 0.20 0.15 0.10 0.05 0 0 0 0.3 0.6 0.9 Total Gate Charge, Qg -- nC 1.2 1.5 IT00052 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02382 No.6637-3/4 5HN01C Note on usage : Since the 5HN01C is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6637-4/4