5LP01C-TB-E

Ordering number : EN6619C 5LP01C P-Channel Small Signal MOSFET http://onsemi.com –50V, –0.07A, 23Ω, Single CP Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) --50 V ±10 V --0.07 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.28 A 0.25 W This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Ordering & Package Information unit : mm (typ) 7013A-013 1.1 memo 5LP01C-TB-E CP SC-59, TO-236, SOT-23, TO-236AB 3,000 pcs./reel Pb-Free 5LP01C-TB-H CP SC-59, TO-236, SOT-23, TO-236AB 3,000 pcs./reel Pb-Free and Halogen Free 1.5 5LP01C-TB-E 5LP01C-TB-H Shipping 1 0.95 2 Packing Type: TB Marking 0.4 1 : Gate 2 : Source 3 : Drain CP XB LOT No. 0.05 0.1 3 Package LOT No. 0.3 0.5 2.5 0.5 2.9 Device TB Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 July, 2013 72413 TKIM TC-00002969/62712 TKIM/33006PE MSIM TB-00002201/92500 TS IM TA-2036 No.6619-1/6 5LP01C Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Conditions V(BR)DSS IDSS IGSS VGS=±8V, VDS=0V Forward Transfer Admittance VGS(off) | yfs | VDS= --10V, ID= --100μA VDS= --10V, ID= --40mA Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID= --40mA, VGS= --4V ID= --20mA, VGS= --2.5V ID= --5mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD ID= --1mA, VGS=0V VDS= --50V, VGS=0V VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --70mA Ratings min typ max --50 V --0.4 70 --1 μA ±10 μA --1.4 100 V mS 18 23 Ω 20 28 Ω 30 60 Ω 7.4 pF 4.2 pF 1.3 pF 20 ns 35 ns 160 ns 150 ns 1.40 nC 0.16 nC 0.23 IS= --70mA, VGS=0V Unit --0.85 nC --1.2 V Switching Time Test Circuit VDD= --25V VIN 0V --4V ID= --40mA RL=625Ω D VIN VOUT PW=10μs D.C.≤1% G 5LP01C P.G 50Ω S No.6619-2/6 5LP01C --0.04 --0.03 VGS= --1.5V --0.02 --0.01 25°C --0.10 C Drain Current, ID -- A --0.05 Ta= -- --0.12 --2.0V VDS= --10V --0.08 75° .5V --3 .0 V --6 .0V 5V . --2 --3 Drain Current, ID -- A --4 . 0V --0.06 ID -- VGS --0.14 25°C ID -- VDS --0.07 --0.06 --0.04 --0.02 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain to Source Voltage, VDS -- V --1.8 0 --2.0 RDS(on) -- VGS 40 --0.5 --1.0 --1.5 --2.0 --2.5 Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 30 25 ID= --40mA 20 15 10 --1 --2 --3 --4 --5 --6 --7 --8 Gate to Source Voltage, VGS -- V 3 Ta=75°C 2 25°C --25°C 2 3 5 7 --0.1 Drain Current, ID -- A IT00092 3 2 100 7 25°C Ta=75°C 3 2 --25°C 10 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A m -20 ,V =ID mA -40 = ID 20 0V -4. =S G 15 --40 --20 0 20 40 60 80 --25°C 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 160 IT00096 5 7 --0.01 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S 5V V A, 3 Ta=75°C 25°C 2 3 IT00095 | yfs | -- ID 1.0 30 25 5 IT00094 35 -2. =S G 7 10 --0.001 3 RDS(on) -- Ta 40 3 IT00093 VGS= --1.5V 5 5 2 RDS(on) -- ID VGS= --2.5V Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 5 100 7 10 --60 7 10 --0.01 --10 RDS(on) -- ID 1000 Static Drain to Source On-State Resistance, RDS(on) -- Ω --9 --4.0 IT00091 VGS= --4V 35 0 --3.5 RDS(on) -- ID 100 Ta=25°C --20mA --3.0 Gate to Source Voltage, VGS -- V IT00090 VDS= --10V 7 5 3 2 5°C Ta= --2 0.1 7 5 75°C 25°C 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00097 No.6619-3/6 5LP01C IS -- VSD 3 SW Time -- ID 1000 VGS=0V VDD= --25V VGS = --4V 7 Switching Time, SW Time -- ns --0.1 7 5 --0.01 --0.5 --0.6 --25°C 2 25°C 3 Ta=7 5°C --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V td(off) 100 7 5 tr 3 td(on) 2 Ciss Coss 3 2 Crss 1.0 7 5 3 3 5 7 Drain Current, ID -- A --0.1 IT00099 VGS -- Qg VDS= --10V ID= --70mA --9 10 7 5 2 --10 2 Ciss, Coss, Crss -- pF 2 f=1MHz 3 --8 --7 --6 --5 --4 --3 --2 --1 2 0 0.1 0 --5 --10 --15 --20 --25 --30 --35 --40 Drain to Source Voltage, VDS -- V --45 --50 IT00100 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00101 PD -- Ta 0.30 Allowable Power Dissipation, PD -- W tf 3 IT00098 Ciss, Coss, Crss -- VDS 100 7 5 5 10 --0.01 --1.2 Gate to Source Voltage, VGS -- V Source Current, IS -- A 2 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02382 No.6619-4/6 5LP01C Outline Drawing 5LP01C-TB-E, 5LP01C-TB-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.6619-5/6 5LP01C Note on usage : Since the 5LP01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.6619-6/6