Ordering number : EN6666B
5LP01S
P-Channel Small Signal MOSFET
http://onsemi.com
–50V, –0.07A, 23Ω, Single SMCP
Features
•
•
•
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
--50
V
±10
V
--0.07
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
--0.28
A
0.15
W
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7027-004
• Package
: SMCP
• JEITA, JEDEC
: SC-75, SOT-416
• Minimum Packing Quantity : 3,000 pcs./reel
5LP01S-TL-E
1.6
0.8
0.4
Packing Type: TL
Marking
0.3
3
0 to 0.1
0.75
0.6
0.1
TL
0.1 MIN
1 : Gate
2 : Source
3 : Drain
XB
LOT No.
1
2
LOT No.
1.6
0.5 0.5
0.2
0.4
Electrical Connection
3
SMCP
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/41006PE MSIM TB-00002192/D2000 TSIM TA-3075 No.6666-1/7
5LP01S
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
V(BR)DSS
IDSS
ID= --1mA, VGS=0V
VDS= --50V, VGS=0V
VGS=±8V, VDS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID= --40mA, VGS= --4V
ID= --20mA, VGS= --2.5V
ID= --5mA, VGS= --1.5V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
Ratings
min
typ
max
--50
VDS= --10V, ID= --100μA
VDS= --10V, ID= --40mA
V
--0.4
70
VDS= --10V, f=1MHz
See specified Test Circuit.
VDS= --10V, VGS= --10V, ID= --70mA
--1
μA
±10
μA
--1.4
100
V
mS
18
23
Ω
20
28
Ω
30
60
Ω
7.4
pF
4.2
pF
1.3
pF
20
ns
35
ns
160
ns
150
ns
1.40
nC
0.16
nC
0.23
IS= --70mA, VGS=0V
Unit
--0.85
nC
--1.2
V
Switching Time Test Circuit
0V
--4V
VDD= --25V
VIN
VIN
PW=10μs
D.C.≤1%
D
ID= --40mA
RL=625Ω
VOUT
G
5LP01S
P.G
50Ω
S
Ordering Information
Device
5LP01S-TL-E
Package
Shipping
memo
SMCP
3,000pcs./reel
Pb Free
No.6666-2/7
5LP01S
--0.04
--0.03
VGS= --1.5V
--0.02
--0.01
25°C
Ta=
--
--0.10
C
--0.05
VDS= --10V
--0.08
75°
--3
.5 V
--0.12
--2.0V
Drain Current, ID -- A
.0
V
--6
.0V
5V
.
--2
--3
Drain Current, ID -- A
--4
.
0V
--0.06
ID -- VGS
--0.14
25°C
ID -- VDS
--0.07
--0.06
--0.04
--0.02
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Drain-to-Source Voltage, VDS -- V
--1.8
0
--2.0
RDS(on) -- VGS
40
--0.5
--1.0
--1.5
--2.0
--2.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
30
25
--40mA
ID= --20mA
15
10
--1
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
3
Ta=75°C
2
25°C
--25°C
2
3
5
7
--0.1
Drain Current, ID -- A
IT00092
3
2
100
7
5
Ta=75°C
25°C
--25°C
2
10
--0.01
2
3
5
7
2
--0.1
Drain Current, ID -- A
0V
-4.
=S
G
15
--40
--20
0
20
40
60
80
25°C
--25°C
3
2
2
3
100
Ambient Temperature, Ta -- °C
120
140
160
IT00096
5
7
--0.01
Drain Current, ID -- A
Forward Transfer Admittance, | yfs | -- S
5V
-2.
=S
G
20
Ta=75°C
2
3
IT00095
| yfs | -- ID
1.0
30
,V
mA
-- 20
,V
=
ID
mA
-40
=
ID
5
IT00094
35
25
7
10
--0.001
3
RDS(on) -- Ta
40
3
IT00093
VGS= --1.5V
5
3
2
RDS(on) -- ID
VGS= --2.5V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
5
100
7
10
--60
7
10
--0.01
--10
RDS(on) -- ID
1000
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--9
--4.0
IT00091
VGS= --4V
35
0
--3.5
RDS(on) -- ID
100
Ta=25°C
20
--3.0
Gate-to-Source Voltage, VGS -- V
IT00090
VDS= --10V
7
5
3
2
°C
Ta= --25
0.1
75°C
7
25°C
5
3
2
0.01
--0.01
2
3
5
7
--0.1
Drain Current, ID -- A
2
3
IT00097
No.6666-3/7
5LP01S
IS -- VSD
3
Switching Time, SW Time -- ns
7
2
--0.01
--0.5
--0.6
--0.7
--25°C
5
Ta=7
5°C
25°C
--0.8
--0.9
--1.0
--1.1
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
2
td(off)
100
7
5
tr
3
td(on)
2
2
Ciss
Coss
3
2
Crss
1.0
7
5
3
3
5
7
--0.1
IT00099
VGS -- Qg
--10
VDS= --10V
ID= --70mA
--9
10
7
5
2
Drain Current, ID -- A
f=1MHz
3
--8
--7
--6
--5
--4
--3
--2
--1
2
0
0.1
0
--5
--10
--15
--20
--25
--30
--35
--40
Drain-to-Source Voltage, VDS -- V
--45
--50
IT00100
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT00101
PD -- Ta
0.20
Allowable Power Dissipation, PD -- W
tf
3
IT00098
Ciss, Coss, Crss -- VDS
100
7
5
5
10
--0.01
--1.2
Gate-to-Source Voltage, VGS -- V
Source Current, IS -- A
--0.1
VDD= --25V
VGS = --4V
7
2
3
SW Time -- ID
1000
VGS=0V
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02381
No.6666-4/7
5LP01S
Embossed Taping Specification
5LP01S-TL-E
No.6666-5/7
5LP01S
Outline Drawing
5LP01S-TL-E
Land Pattern Example
Mass (g) Unit
0.003 mm
* For reference
Unit: mm
0.7
1.3
0.7
0.7
0.6
0.5
0.5
No.6666-6/7
5LP01S
Note on usage : Since the 5LP01S is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6666-7/7
