74HC14 Hex Schmitt−Trigger Inverter
High−Performance Silicon−Gate CMOS
The 74HC14 is identical in pinout to the LS14, LS04 and the HC04. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC14 is useful to “square up” slow input rise and fall times. Due to hysteresis voltage of the Schmitt trigger, the HC14 finds applications in noisy environments.
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14 14 1 SOIC−14 D SUFFIX CASE 751A 1 HC14G AWLYWW
• • • • • • • • •
Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1.0 mA High Noise Immunity Characteristic of CMOS Devices In Compliance With the JEDEC Standard No. 7A Requirements ESD Performance: HBM > 2000 V; Machine Model > 200 V Chip Complexity: 60 FETs or 15 Equivalent Gates These are Pb−Free Devices
14 14 1 TSSOP−14 DT SUFFIX CASE 948G 1 HC 14 ALYW G G
HC14 = Device Code A = Assembly Location L, WL = Wafer Lot Y = Year W, WW = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 1
1
Publication Order Number: 74HC14/D
74HC14
Pinout: 14−Lead Packages (Top View)
VCC 14 A6 13 Y6 12 A5 11 Y5 10 A4 9 Y4 8 A1
LOGIC DIAGRAM
1 2 Y1
A2
3
4
Y2
A3 1 A1 2 Y1 3 A2 4 Y2 5 A3 6 Y3 7 GND A4
5
6
Y3 Y=A
9
8
Y4
Pin 14 = VCC Pin 7 = GND
A5
11
10
Y5
FUNCTION TABLE
Inputs A L H Outputs Y H L
A6
13
12
Y6
ORDERING INFORMATION
Device 74HC14DR2G 74HC14DTR2G Package SOIC−14 (Pb−Free) TSSOP−14* Shipping † 2500 / Tape & Reel 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free.
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74HC14
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Symbol VCC Vin Iin Iout ICC PD Tstg TL Vout Parameter Value Unit V V V mA mA mA mW _C _C 260 DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) – 0.5 to + 7.0 – 0.5 to VCC + 0.5 – 0.5 to VCC + 0.5 ±20 ±25 ±50 500 450 – 65 to + 150 DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Storage Temperature Range Lead Temperature, 1 mm from Case for 10 Seconds SOIC or TSSOP Package SOIC Package† TSSOP Package†
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol VCC Vin, Vout TA tr, tf Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature Range, All Package Types Input Rise/Fall Time (Figure 1) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V Min 2.0 0 – 55 0 0 0 Max 6.0 VCC + 125 No Limit* No Limit* No Limit* Unit V V _C ns
*When Vin = 50% VCC, ICC > 1mA
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74HC14
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol VT+ max Parameter Maximum Positive−Going Input Threshold Voltage (Figure 3) Minimum Positive−Going Input Threshold Voltage (Figure 3) Maximum Negative−Going Input Threshold Voltage (Figure 3) Minimum Negative−Going Input Threshold Voltage (Figure 3) Maximum Hysteresis Voltage (Figure 3) Condition Vout = 0.1V |Iout| ≤ 20mA VCC (V) 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 4.5 6.0 |Iout| ≤ 2.4mA |Iout| ≤ 4.0mA |Iout| ≤ 5.2mA 3.0 4.5 6.0 2.0 4.5 6.0 |Iout| ≤ 2.4mA |Iout| ≤ 4.0mA |Iout| ≤ 5.2mA 3.0 4.5 6.0 6.0 6.0 Guaranteed Limit −55 to 25°C 1.50 2.15 3.15 4.20 1.0 1.5 2.3 3.0 0.9 1.4 2.0 2.6 0.3 0.5 0.9 1.2 1.20 1.65 2.25 3.00 0.20 0.25 0.40 0.50 1.9 4.4 5.9 2.48 3.98 5.48 0.1 0.1 0.1 0.26 0.26 0.26 ±0.1 2.0 ≤85°C 1.50 2.15 3.15 4.20 0.95 1.45 2.25 2.95 0.95 1.45 2.05 2.65 0.3 0.5 0.9 1.2 1.20 1.65 2.25 3.00 0.20 0.25 0.40 0.50 1.9 4.4 5.9 2.34 3.84 5.34 0.1 0.1 0.1 0.33 0.33 0.33 ±1.0 20 ≤125°C 1.50 2.15 3.15 4.20 0.95 1.45 2.25 2.95 0.95 1.45 2.05 2.65 0.3 0.5 0.9 1.2 1.20 1.65 2.25 3.00 0.20 0.25 0.40 0.50 1.9 4.4 5.9 2.20 3.70 5.20 0.1 0.1 0.1 0.40 0.40 0.40 ±1.0 40 mA mA V Unit V
VT+ min
Vout = 0.1V |Iout| ≤ 20mA
V
VT− max
Vout = VCC − 0.1V |Iout| ≤ 20mA
V
VT− min
Vout = VCC − 0.1V |Iout| ≤ 20mA
V
VHmax Note 2
Vout = 0.1V or VCC − 0.1V |Iout| ≤ 20mA
V
VHmin Note 2
Minimum Hysteresis Voltage (Figure 3)
Vout = 0.1V or VCC − 0.1V |Iout| ≤ 20mA
V
VOH
Minimum High−Level Output Voltage
Vin ≤ VT− min |Iout| ≤ 20mA Vin ≤ VT− min
V
VOL
Maximum Low−Level Output Voltage
Vin ≥ VT+ max |Iout| ≤ 20mA Vin ≥ VT+ max
Iin ICC
Maximum Input Leakage Current Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND Vin = VCC or GND Iout = 0mA
1. Information on typical parametric values along with frequency or heavy load considerations can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). 2. VHmin > (VT+ min) − (VT− max); VHmax = (VT+ max) − (VT− min).
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74HC14
AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)
Symbol tPLH, tPHL Parameter Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2) VCC (V) 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 Guaranteed Limit −55 to 25°C 75 30 15 13 75 27 15 13 10 ≤85°C 95 40 19 16 95 32 19 16 10 ≤125°C 110 55 22 19 110 36 22 19 10 Unit ns
tTLH, tTHL
Maximum Output Transition Time, Any Output (Figures 1 and 2)
ns
Cin
Maximum Input Capacitance
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Inverter)* 22 pF * Used to determine the no −load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . For load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
tf 90% 50% 10% tPLH 90% OUTPUT Y 50% 10% tTLH
tr VCC
INPUT A
GND tPHL
tTHL
Figure 1. Switching Waveforms
TEST POINT OUTPUT DEVICE UNDER TEST C L*
*Includes all probe and jig capacitance
Figure 2. Test Circuit
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74HC14
VT , TYPICAL INPUT THRESHOLD VOLTAGE (VOLTS 4
3 (VT+) VHtyp
2 (VT−)
1
2
3 4 5 VCC, POWER SUPPLY VOLTAGE (VOLTS) VHtyp = (VT+ typ) − (VT− typ)
6
Figure 3. Typical Input Threshold, VT+, VT− versus Power Supply Voltage
A
Y
(a) A Schmitt−Trigger Squares Up Inputs With Slow Rise and Fall Times VH Vin VCC VT+ VT− GND VOH Vout VOL Vout Vin VH
(b) A Schmitt−Trigger Offers Maximum Noise Immunity VCC VT+ VT− GND VOH
VOL
Figure 4. Typical Schmitt−Trigger Applications
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74HC14
PACKAGE DIMENSIONS
SOIC−14 CASE 751A−03 ISSUE H
− A−
14 8
− B−
P 7 PL 0.25 (0.010)
M
B
M
1
7
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
G C −T−
SEATING PLANE
R X 45 _
F
D 14 PL 0.25 (0.010)
K
M
M
S
J
TB
A
S
DIM A B C D F G J K M P R
MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50
INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019
SOLDERING FOOTPRINT*
7X
7.04 1 0.58
14X
14X
1.52
1.27 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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74HC14
PACKAGE DIMENSIONS
TSSOP−14 CASE 948G−01 ISSUE B
14X K REF
0.10 (0.004) 0.15 (0.006) T U
S
M
TU
S
V
S
N
2X
L/2
14
8
0.25 (0.010) M
L
PIN 1 IDENT. 1 7
B − U−
N F DETAIL E K
0.15 (0.006) T U
S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_
J J1
SECTION N−N −W−
C 0.10 (0.004) −T− SEATING
PLANE
D
G
H
DETAIL E
SOLDERING FOOTPRINT*
7.06 1
0.36
14X
14X
1.26
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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ÇÇÇ ÉÉÉ ÇÇÇ ÉÉÉ ÇÇÇ
A −V−
K1
0.65 PITCH
DIMENSIONS: MILLIMETERS
74HC14
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74HC14/D