74HC74D

74HC74 Dual D Flip−Flop with Set and Reset High−Performance Silicon−Gate CMOS The 74HC74 is identical in pinout to the LS74. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. This device consists of two D flip−flops with individual Set, Reset, and Clock inputs. Information at a D−input is transferred to the corresponding Q output on the next positive going edge of the clock input. Both Q and Q outputs are available from each flip−flop. The Set and Reset inputs are asynchronous. Features 14 1 http://onsemi.com MARKING DIAGRAMS 14 SOIC−14 D SUFFIX CASE 751A 1 HC74G AWLYWW • • • • • • • • • Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1.0 mA High Noise Immunity Characteristic of CMOS Devices In Compliance with the JEDEC Standard No. 7A Requirements ESD Performance: HBM > 2000 V; Machine Model > 200 V Chip Complexity: 128 FETs or 32 Equivalent Gates Pb−Free Packages are Available 14 14 1 TSSOP−14 DT SUFFIX CASE 948G 1 HC 74 ALYW G G HC74 = Device Code A = Assembly Location L, WL = Wafer Lot Y = Year W, WW = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2007 February, 2007 − Rev. 0 1 Publication Order Number: 74HC74/D 74HC74 PIN ASSIGNMENT RESET 1 DATA 1 CLOCK 1 SET 1 Q1 Q1 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC RESET 2 DATA 2 CLOCK 2 SET 2 Q2 Q2 RESET 2 DATA 2 CLOCK 2 SET 2 RESET 1 DATA 1 CLOCK 1 SET 1 LOGIC DIAGRAM 1 2 3 4 13 12 11 10 PIN 14 = VCC PIN 7 = GND 9 8 Q2 Q2 5 6 Q1 Q1 FUNCTION TABLE Inputs Set Reset Clock Data L H L H H H H H H L L H H H H H X X X X X X H L X X X Outputs Q Q H L L H H* H* H L L H No Change No Change No Change L H *Both outputs will remain high as long as Set and Reset are low, but the output states are unpredictable if Set and Reset go high simultaneously. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol VCC Vin Iin Iout ICC PD Tstg TL Vout Parameter Value Unit V V V mA mA mA mW _C _C 260 300 DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (SOIC or TSSOP Package) SOIC Package† TSSOP Package† DC Output Voltage (Referenced to GND) – 0.5 to + 7.0 – 0.5 to VCC + 0.5 – 0.5 to VCC + 0.5 ±20 ±25 ±50 500 450 – 65 to + 150 MAXIMUM RATINGS This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout TA tr, tf Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figures 1, 2, 3) VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V Min 2.0 0 – 55 0 0 0 0 Max 6.0 VCC + 125 1000 600 500 400 Unit V V _C ns http://onsemi.com 2 74HC74 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol VIH Parameter Minimum High−Level Input Voltage Test Conditions Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 mA VCC (V) 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 4.5 6.0 |Iout| v 2.4 mA |Iout| v 4.0 mA |Iout| v 5.2 mA 3.0 4.5 6.0 2.0 4.5 6.0 |Iout| v 2.4 mA |Iout| v 4.0 mA |Iout| v 5.2 mA 3.0 4.5 6.0 6.0 6.0 – 55 to 25_C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 2.48 3.98 5.48 0.1 0.1 0.1 0.26 0.26 0.26 ±0.1 2.0 v 85_C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 2.34 3.84 5.34 0.1 0.1 0.1 0.33 0.33 0.33 ±1.0 20 v 125_C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 2.2 3.7 5.2 0.1 0.1 0.1 0.4 0.4 0.4 ±1.0 80 mA mA V Unit V VIL Maximum Low−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 mA V VOH Minimum High−Level Output Voltage Vin = VIH or VIL |Iout| v 20 mA Vin = VIH or VIL V VOL Maximum Low−Level Output Voltage Vin = VIH or VIL |Iout| v 20 mA Vin = VIH or VIL Iin ICC Maximum Input Leakage Current Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Vin = VCC or GND Iout = 0 mA NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol fmax Parameter Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4) VCC (V) 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 — – 55 to 25_C 6.0 15 30 35 100 75 20 17 105 80 21 18 75 30 15 13 10 v 85_C 4.8 10 24 28 125 90 25 21 130 95 26 22 95 40 19 16 10 v 125_C 4.0 8.0 20 24 150 120 30 26 160 130 32 27 110 55 22 19 10 Unit MHz tPLH, tPHL Maximum Propagation Delay, Clock to Q or Q (Figures 1 and 4) ns tPLH, tPHL Maximum Propagation Delay, Set or Reset to Q or Q (Figures 2 and 4) ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 4) ns Cin Maximum Input Capacitance pF NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Flip−Flop)* 32 pF * Used to determine the no −load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . For load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). http://onsemi.com 3 74HC74 TIMING REQUIREMENTS (Input tr = tf = 6.0 ns) Guaranteed Limit Symbol tsu Parameter Minimum Setup Time, Data to Clock (Figure 3) VCC (V) 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 – 55 to 25_C 80 35 16 14 3.0 3.0 3.0 3.0 8.0 8.0 8.0 8.0 60 25 12 10 60 25 12 10 1000 800 500 400 v 85_C 100 45 20 17 3.0 3.0 3.0 3.0 8.0 8.0 8.0 8.0 75 30 15 13 75 30 15 13 1000 800 500 400 v 125_C 120 55 24 20 3.0 3.0 3.0 3.0 8.0 8.0 8.0 8.0 90 40 18 15 90 40 18 15 1000 800 500 400 Unit ns th Minimum Hold Time, Clock to Data (Figure 3) ns trec Minimum Recovery Time, Set or Reset Inactive to Clock (Figure 2) ns tw Minimum Pulse Width, Clock (Figure 1) ns tw Minimum Pulse Width, Set or Reset (Figure 2) ns tr, tf Maximum Input Rise and Fall Times (Figures 1, 2, 3) ns ORDERING INFORMATION Device 74HC74D 74HC74DG 74HC74DR2 74HC74DR2G 74HC74DTR2 74HC74DTR2G Package SOIC−14 SOIC−14 (Pb−Free) SOIC−14 SOIC−14 (Pb−Free) TSSOP−14* TSSOP−14* 2500 / Tape & Reel 55 Units / Rail Shipping † †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 4 74HC74 SWITCHING WAVEFORMS tf CLOCK 90% 50% 10% tw 1/fmax 90% 50% 10% tPLH tr tw VCC GND SET OR RESET Q OR Q 50% tPHL 50% tPLH Q OR Q CLOCK 50% trec 50% VCC GND tPHL Q or Q tTLH tTHL VCC GND Figure 1. Figure 2. VALID DATA 50% tsu 50% th TEST POINT VCC GND VCC GND *Includes all probe and jig capacitance DEVICE UNDER TEST OUTPUT C L* CLOCK Figure 3. Figure 4. SET 4, 10 2, 12 5, 9 Q DATA CLOCK 3, 11 6, 8 Q 1, 13 RESET Figure 5. EXPANDED LOGIC DIAGRAM http://onsemi.com 5 74HC74 PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE H − A− 14 8 − B− P 7 PL 0.25 (0.010) M B M 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. G C −T− SEATING PLANE R X 45 _ F D 14 PL 0.25 (0.010) K M M S J TB A S DIM A B C D F G J K M P R MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 SOLDERING FOOTPRINT* 7X 7.04 1 0.58 14X 14X 1.52 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 74HC74 PACKAGE DIMENSIONS TSSOP−14 CASE 948G−01 ISSUE B 14X K REF 0.10 (0.004) 0.15 (0.006) T U S M TU S V N S 2X L/2 14 8 0.25 (0.010) M L PIN 1 IDENT. 1 7 B − U− N F DETAIL E K 0.15 (0.006) T U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ J J1 SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE D G H DETAIL E SOLDERING FOOTPRINT* 7.06 1 0.36 14X 14X 1.26 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 ÇÇÇ ÉÉÉ ÇÇÇ ÉÉÉ ÇÇÇ A −V− K1 0.65 PITCH DIMENSIONS: MILLIMETERS 74HC74 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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