80SQ045N

80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES Features • • • • • • • • http://onsemi.com High Current Capability Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Low Forward Voltage High Surge Capacity These are Pb−Free Devices* AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • MARKING DIAGRAM 220°C Max. for 10 Seconds, 1/16″ from Case Polarity: Cathode indicated by Polarity Band ESD Protection: Human Body Model > 4000 V (Class 3) Machine Model > 400 V (Class C) 80SQ 045N YYWW G G MAXIMUM RATINGS Rating Symbol Max Unit VRRM VRWM VR 45 V IO 8.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 140 A Operating and Storage Junction Temperature Range (Reverse Voltage Applied) TJ, Tstg −65 to +125 °C dv/dt 10 V/ns Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TL = 75°C (PsiJL = 12°C/W, P.C. Board Mounting, Note 2) Voltage Rate of Change (Rated VR) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. May, 2006 − Rev. 3 ORDERING INFORMATION Package Shipping † 80SQ045N Axial Lead* 500 Units/Box 80SQ045NG Axial Lead* 500 Units/Box 80SQ045NRL Axial Lead* 1500/Tape & Reel 80SQ045NRLG Axial Lead* 1500/Tape & Reel Device Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2006 YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 80SQ045N/D 80SQ045N THERMAL CHARACTERISTICS Characteristic Symbol 0.9 in x 0.9 in Copper Pad Size 6.75 in x 6.75 in Copper Pad Size Thermal Resistance, Junction−to−Lead (See Note 2 − Mounting Data) Thermal Resistance, Junction−to−Ambient (See Note 2 − Mounting Data) RqJL RqJA 13 50 12 40 °C/W Symbol Max Unit Unit ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 8.0 A, TL = 25°C) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1) TL = 25°C TL = 100°C iR V 0.55 mA 1.0 50 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 30 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 30 10 100°C 1 0.1 75°C 125°C 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 10 MBR845 1 0.1 0.8 100°C 25°C 0.1 IR, INSTANTANEOUS REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.8 Figure 2. Maximum Forward Voltage 10,000 1E−01 C, CAPACITANCE (pF) 125°C 1E−02 100°C 75°C 1E−03 1E−04 25°C 1E−05 1E−06 75°C 125°C f = 1 MHz TJ = 25°C 1000 100 0 5 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) 45 50 0.1 Figure 3. Typical Reverse Current 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Typical Capacitance http://onsemi.com 2 100 75 9 70 8 IF, AVERAGE FORWARD CURRENT (AMPS) COPPER AREA (sq in) 80SQ045N 65 60 55 50 See Note 2 45 40 dc RqJL = 12°C/W 7 6 SQUARE WAVE 5 4 3 2 1 35 0 30 0 2 4 6 8 0 10 20 40 60 80 100 120 RqJA (°C/W) TL, LEAD TEMPERATURE (°C) Figure 5. RqJA versus Copper Area Figure 6. Current Derating − Lead 140 4.5 NOTE 2 — MOUNTING DATA PFO, AVERAGE POWER DISSIPATION (WATTS) 4 3.5 Mounting Method SQUARE WAVE 3 P.C. Board with 6.75 sq. in. copper surface. TJ = 125°C ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ 2.5 dc 2 1.5 1 0.5 0 0 2 4 6 10 8 IO, AVERAGE FORWARD CURRENT (AMPS) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Forward Power Dissipation 1 L = 3/8, Board Ground Plane D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.01 Copper Area = 0.271 sq. in. 0.01 0.001 0.0001 t1 RqJA = 61.8 °C/W SINGLE PULSE 0.001 0.01 0.1 1.0 t, TIME (sec) Figure 8. Thermal Response, Junction−to−Ambient http://onsemi.com 3 t2 DUTY CYCLE, D = t1/t2 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 ISSUE G DATE 06/06/2000 SCALE 1:1 K D NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 267-04 OBSOLETE, NEW STANDARD 267-05. A 1 2 B K STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DOCUMENT NUMBER: DESCRIPTION: DIM A B D K 98ASB42170B AXIAL LEAD INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 --- STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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