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notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
AFGB30T65SQDN
IGBT for Automotive
Applications
650 V, 30 A, D2PAK
Features
•
•
•
•
•
•
www.onsemi.com
Maximum Junction Temperature: TJ = 175°C
High Speed Switching Series
VCE(sat) = 1.6 V (typ.) @ IC = 30 A
Low VF Soft Recovery Co−packaged Diode
AEC−Q101 Qualified
100% of the Parts are Dynamically Tested (Note 1)
BVCES
VCE(sat) TYP
IC MAX
650 V
1.6 V
120 A
C
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
G
MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
Parameter
E
Symbol
Value
Unit
Collector−to−Emitter Voltage
VCES
650
V
Gate−to−Emitter Voltage
VGES
±20
V
Transient Gate−to−Emitter Voltage
VGES
±30
V
IC
60
A
30
A
ICM
120
A
IF
40
A
20
A
Collector Current (TC = 25°C)
Collector Current (TC = 100°C)
Pulsed Collector Current (Note 2)
Diode Forward Current (TC = 25°C)
Diode Forward Current (TC = 100°C)
Pulsed Diode Maximum Forward Current
(Note 2)
IFM
120
A
Maximum Power Dissipation (TC = 25°C)
PD
220
W
110
W
−55 to
+175
°C
Maximum Power Dissipation (TC = 100°C)
Operating Junction and Storage
Temperature Range
TJ, TSTG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 100 W, Inductive Load
2. Repetitive rating: pulse width limited by max. Junction temperature
3. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad.
4. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
C
G
E
D2PAK
3 LEAD
CASE 418AJ
MARKING DIAGRAM
&Y&Z&3&K
AFGB
30T65SQDN
&Y
&Z
&3
&K
AFGB30T65SQDN
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
= Specific Device Code
ORDERING INFORMATION
Device
AFGB30T65SQDN
Package
Shipping†
D2PAK
(TO−263)
800 Units /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
January, 2019 − Rev. 0
1
Publication Order Number:
AFGB30T65SQDN/D
AFGB30T65SQDN
Table 1. THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Thermal Resistance Junction−to−Case, for IGBT
Parameter
RθJC
0.68
°C/W
Thermal Resistance Junction−to−Case, for Diode
RθJC
1.55
Thermal Resistance Junction−to−Ambient
RθJA
40
Table 2. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
BVCES
VGE = 0 V, IC = 1 mA
DVCES/ DTJ
VGE = 0 V, IC = 1 mA
Unit
650
−
−
V
−
0.6
−
V/°C
OFF CHARACTERISTICS
Collector−to−Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut−Off Current
ICES
VCE = VCES, VGE = 0 V
−
−
250
mA
G−E Leakage Current
IGES
VGE = VGES, VCE = 0 V
−
−
±400
nA
Gate Threshold Voltage
VGE(th)
VGE = VCE, IC = 30 mA
3.0
4.5
6.0
V
Collector−to−Emitter Saturation Voltage
VCE(sat)
IC = 30 A, VGE = 15 V, TC = 25°C
−
1.6
2.1
V
IC = 30 A, VGE = 15 V, TC = 175°C
−
1.92
−
V
VCE = 30 V, VGE = 0 V, f = 1 MHz
−
1871
−
pF
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Input Capacitance
Cies
Output Capacitance
Coes
−
44
−
Reverse Transfer Capacitance
Cres
−
7
−
−
14.5
−
ns
−
16
−
ns
−
63.2
−
ns
tf
−
8.3
−
ns
Turn−On Switching Loss
Eon
−
0.783
−
mJ
Turn−Off Switching Loss
Eoff
−
0.160
−
mJ
Total Switching Loss
Ets
−
0.943
−
mJ
Turn−On Delay Time
td(on)
−
12.8
−
ns
−
20.8
−
ns
−
67.2
−
ns
tf
−
11.5
−
ns
Turn−On Switching Loss
Eon
−
1.01
−
mJ
Turn−Off Switching Loss
Eoff
−
0.369
−
mJ
Total Switching Loss
Ets
−
1.379
−
mJ
−
56
−
nC
−
11
−
nC
−
14
−
nC
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
tr
td(off)
Total Gate Charge
Qg
Gate−to−Emitter Charge
Qge
Gate−to−Collector Charge
Qgc
VCC = 400 V, IC = 30 A, RG = 6 W,
VGE = 15 V,
Inductive Load, TC = 25°C
VCC = 400 V, IC = 30 A, RG = 6 W,
VGE = 15 V,
Inductive Load, TC = 175°C
VCE = 400 V, IC = 30 A,
VGE = 15 V
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2
AFGB30T65SQDN
Table 2. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Diode Forward Voltage
VFM
IF = 20 A
−
1.5
2.1
V
Reverse Recovery Energy
Erec
IF = 20 A
dIF/dt = 200 A/ms, TC = 25°C
−
22
−
mJ
−
131
−
ns
−
348
−
nC
−
100
−
mJ
−
245
−
ns
−
961
−
nC
DIODE CHARACTERISTICS
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
Reverse Recovery Energy
Erec
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
IF = 20 A
dIF/dt = 200 A/ms, TC = 175°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
AFGB30T65SQDN
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (A)
10 V
15 V
120
VGE = 8 V
90
60
30
0
1
2
3
4
120
12 V
10 V
90
VGE = 8 V
60
30
0
1
2
3
4
Figure 2. Typical Output Characteristics
(1755C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Typical Output Characteristics (255C)
TC = 25°C
Common Emitter
VGE = 15 V
120
TC = 175°C
90
60
30
0
1
2
3
4
5
3.0
Common Emitter
VGE = 15 V
60 A
2.5
2.0
30 A
1.5
15 A
1.0
−100
−50
0
50
100
150
200
TC, COLLECT−EMITTER CASE TEMPERATURE (°C)
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Common Emitter
TC = 25°C
16
IC = 15 A
IC = 60 A
12
IC = 30 A
8
4
0
5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
20
0
15 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
150
0
150
0
5
20 V
TC = 175°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
180
IC, COLLECTOR CURRENT (A)
180
12 V
150
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
20 V
TC = 25°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
180
4
8
12
16
20
20
Common Emitter
TC = 175°C
16
IC = 15 A
12
IC = 60 A
IC = 30 A
8
4
0
0
4
8
12
16
VGE, GATE−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. VGE (255C)
Figure 6. Saturation Voltage vs. VGE (1755C)
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4
20
AFGB30T65SQDN
TYPICAL CHARACTERISTICS
15
VGE, GATE−EMITTER VOLTAGE (V)
Cies
1K
100
Coes
10
1
Cres
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25°C
1
100
10
100
400 V
VCC = 200 V
9
6
3
0
0
10
20
30
40
50
60
Figure 8. Gate Charge Characteristics
1000
td(on)
TC = 25°C
TC = 175°C
0
10
20
30
td(off)
100
tf
10
1
40
TC = 25°C
TC = 175°C
80
70
Figure 7. Capacitance Characteristics
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 30 A
SWITCHING TIME (ns)
300 V
12
Qg, GATE CHARGE (nC)
tr
10
Common Emitter
TC = 25°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
CAPACITANCE (pF)
10K
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 30 A
0
10
20
30
40
50
RG, GATE RESISTANCE (W)
RG, GATE RESISTANCE (W)
Figure 9. Turn−on Characteristics vs. Gate
Resistance
Figure 10. Turn−off Characteristics vs. Gate
Resistance
200
tr
100
SWITCHING TIME (ns)
SWITCHING TIME (ns)
100
td(on)
10
1
TC = 25°C
TC = 175°C
0
25
Common Emitter
VGE = 15 V, RG = 6 W
50
75
100
125
tf
10
Common Emitter
VGE = 15 V, RG = 6 W
1
150
td(off)
TC = 25°C
TC = 175°C
0
25
50
75
100
125
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Turn−on Characteristics vs.
Collector Current
Figure 12. Turn−off Characteristics vs.
Collector Current
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5
150
AFGB30T65SQDN
TYPICAL CHARACTERISTICS
10K
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 30 A
SWITCHING LOSS (mJ)
SWITCHING LOSS (mJ)
10K
Eon
1K
Eoff
100
TC = 25°C
TC = 175°C
0
10
20
30
40
Eon
1K
10
50
Eoff
100
Common Emitter
VGE = 15 V, RG = 6 W
TC = 25°C
TC = 175°C
0
25
50
75
100
125
RG, GATE RESISTANCE (W)
IC, COLLECTOR CURRENT (A)
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
150
100
IF, FORWARD CURRENT (A)
100 ms
10
1 ms
10 ms
1
DC
0.1
0.01
Irr, REVERSE RECOVERY CURRENT (A)
10 ms
TC = 25°C
TJ = 175°C
Single Pulse
1
10
10
100
8
1000
TJ = 25°C
0
1
2
3
4
Figure 15. SOA Characteristics
Figure 16. Forward Characteristics
di/dt = 200 A/ms
di/dt = 200 A/ms
6
5
di/dt = 100 A/ms
4
di/dt = 100 A/ms
3
2
0
TJ = 75°C
VF, FORWARD VOLTAGE (V)
7
1
0
TJ = 175°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TC = 25°C
TC = 175°C
9
10
1
trr, REVERSE RECOVERY TIME (ns)
IC, COLLECTOR CURRENT (A)
100
5
10
15
20
25
30
35
40
400
di/dt = 100 A/ms
TC = 25°C
TC = 175°C
350
di/dt = 200 A/ms
300
250
di/dt = 100 A/ms
200
150
di/dt = 200 A/ms
100
50
0
0
5
10
15
20
25
30
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
Figure 17. Reverse Recovery Current
Figure 18. Reverse Recovery Time
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6
35
40
AFGB30T65SQDN
TYPICAL CHARACTERISTICS
Qrr, STORED RECOVERY CHARGE (nC)
1400
di/dt = 200 A/ms
TC = 25°C
TC = 175°C
1200
1000
di/dt = 100 A/ms
800
600
di/dt = 200 A/ms
400
di/dt = 100 A/ms
200
0
0
10
20
30
40
IF, FORWARD CURRENT (A)
Figure 19. Stored Charge
ZqJC, THERMAL RESPONSE
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
Duty Factor, D = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.01
0.00001
0.0001
t2
0.001
0.01
0.1
1
10
RECTANGULAR PULSE DURATION (sec)
ZqJC, THERMAL RESPONSE
Figure 20. Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
PDM
0.05
0.02
t1
0.01
0.01
Duty Factor, D = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.00001
t2
0.0001
0.001
0.01
0.1
RECTANGULAR PULSE DURATION (sec)
Figure 21. Transient Thermal Impedance of Diode
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7
1
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE E
SCALE 1:1
GENERIC MARKING DIAGRAMS*
XX
XXXXXXXXX
AWLYWWG
IC
DOCUMENT NUMBER:
DESCRIPTION:
XXXXXXXXG
AYWW
Standard
98AON56370E
AYWW
XXXXXXXXG
AKA
Rectifier
XXXXXX
XXYMW
SSG
DATE 25 OCT 2019
XXXXXX = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
W
= Week Code (SSG)
M
= Month Code (SSG)
G
= Pb−Free Package
AKA
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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