AFGB40T65SQDN
IGBT for Automotive
Applications, 650 V, 40 A,
D2PAK
Features
•
•
•
•
•
•
Maximum Junction Temperature: TJ = 175°C
High Speed Switching Series
VCE(sat) = 1.6 V (Typ.) @ IC = 40 A
100% of the Part are Dynamically Tested (Note 1)
AEC−Q101 Qualified
These Devices are Pb−Free and are RoHS Compliant
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BVCES
VCE(sat) TYP
IC MAX
650 V
1.6 V
160 A
C
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
G
E
ABSOLUTE MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Collector to Emitter Voltage
VCES
650
V
Gate-to-Emitter Voltage
VGES
±20
V
Transient Gate-to-Emitter Voltage
VGES
±30
V
IC
80
A
40
A
ICM
160
A
IF
40
A
20
A
Parameter
Collector Current − TC = 25°C
Collector Current − TC = 100°C
Pulsed Collector Current (Note 2)
Diode Forward Current − TC = 25°C
Diode Forward Current − TC = 100°C
Pulsed Diode Maximum Forward
Current (Note 2)
IFM
160
A
Maximum Power Dissipation −
TC = 25°C
PD
238
W
119
W
−55 to 175
°C
Maximum Power Dissipation −
TC = 100°C
Operating Junction and Storage
Temperature
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VCC = 400 V, VGE = 15 V, IC = 120A, RG = 100 W, Inductive Load.
2. Repetitive rating: pulse width limited by max. Junction temperature.
3. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad.
4. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
C
G
E
D2PAK−3
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
AFGB
40T65SQDN
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= 3-Digit Data Code
&K
= 2-Digit Lot Traceability Code
AFGB40T65SQDN= Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping†
AFGB40T65SQDN
D2PAK
800 Units /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
December, 2018 − Rev. 2
1
Publication Order Number:
AFGB40T65SQDN/D
AFGB40T65SQDN
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
Unit
°C/W
Thermal Resistance Junction-to-Case, for IGBT
RqJC
0.63
Thermal Resistance Junction-to-Case, for Diode
RqJC
1.55
Thermal Resistance Junction-to-Ambient
RqJA
40
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
650
−
−
V
IC = 1 mA, Reference to 25°C
−
0.6
−
V/°C
OFF CHARACTERISTICS
Collector to Emitter Breakdown
Voltage
Temperature Coefficient of
Breakdown Voltage
BVCES
DVCES/DTJ
VGE = 0 V, IC = 1 mA
Collector Cut-Off Current
ICES
VCE = VCES, VGE = 0 V
−
−
250
mA
G−E Leakage Current
IGES
VGE = VGES, VCE = 0 V
−
−
±400
nA
Gate Threshold Voltage
VGE(th)
VGE = VCE, IC = 40 mA
2.6
4.5
6.4
V
Collector to Emitter Saturation
Voltage
VCE(sat)
IC = 40 A, VGE = 15 V, TC = 25°C
−
1.6
2.1
V
IC = 40 A, VGE = 15 V, TC = 175°C
−
1.92
−
V
VCE = 30 V, VGE = 0 V, f = 1 MHz
−
2495
−
pF
ON CHARACTERISTICS
DYNAMIC CHARACTERISTIC
Input Capacitance
Cies
Output Capacitance
Coes
−
50
−
Reverse Transfer Capacitance
Cres
−
9
−
−
17.6
−
ns
−
19.2
−
ns
td(off)
−
75.2
−
ns
tf
−
9.6
−
ns
Turn-On Switching Loss
Eon
−
0.858
−
mJ
Turn-Off Switching Loss
Eoff
−
0.229
−
mJ
Total Switching Loss
Ets
−
1.087
−
mJ
Turn-On Delay Time
td(on)
−
16
−
ns
−
22.4
−
ns
td(off)
−
81.6
−
ns
tf
−
20.8
−
ns
Turn-On Switching Loss
Eon
−
1.14
−
mJ
Turn-Off Switching Loss
Eoff
−
0.484
−
mJ
Total Switching Loss
Ets
−
1.624
−
mJ
Total Gate Charge
Qg
−
76
−
nC
Gate to Emitter Charge
Qge
−
14
−
nC
Gate to Collector Charge
Qgc
−
17
−
nC
SWITCHING CHARACTERISTIC
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
tr
VCC= 400 V, IC = 40 A, RG = 6 W,
VGE = 15 V, Inductive Load,
TC = 25°C
VCC= 400 V, IC = 40 A, RG = 6 W,
VGE = 15 V, Inductive Load,
TC = 175°C
VCE = 400 V, IC = 40 A, VGE = 15 V
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2
AFGB40T65SQDN
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) (continued)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTIC OF THE DIODE (TJ = 25°C unless otherwise stated)
Diode Forward Voltage
VFM
IF = 20 A
−
1.5
2.1
V
Reverse Recovery Energy
Erec
IF = 20 A
dIF/dt = 200 A/ms, TC = 25°C
−
22.3
−
mJ
−
131
−
ns
−
348
−
nC
−
100
−
mJ
−
245
−
ns
−
961
−
nC
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
Reverse Recovery Energy
Erec
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
IF = 20 A
dIF/dt = 200A/ms, TC = 175°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
AFGB40T65SQDN
TYPICAL CHARACTERISTICS
Collector Current, IC (A)
TC = 25°C
180
20 V
12 V
10 V
120
VGE = 8 V
60
0
0
1
2
3
4
Collector−Emitter Voltage, VCE (V)
Collector Current, IC (A)
180
Common Emitter
VGE = 15 V
TC = 25°C
TC = 175°C
120
60
0
0
1
2
3
4
Collector−Emitter Voltage, VCE (V)
5
Collector−Emitter Voltage, VCE (V)
Collector−Emitter Voltage, VCE (V)
Common Emitter
TC = 25°C
IC = 20 A
40 A
80 A
8
4
0
0
4
8
12
16
Gate−Emitter Voltage, VGE (V)
60
0
1
2
3
4
Collector−Emitter Voltage, VCE (V)
5
2,8
Common Emitter
VGE = 15 V
2,6
2,4
2,2
80 A
2
1,8
40 A
1,6
IC = 20 A
1,4
1,2
1
−100
−50
0
50
100
150
200
Figure 4. Saturation Voltage vs Case Temperature
at Variant Current Level
20
12
VGE = 8 V
Collector−Emitter Case Temperature, TC (5C)
Figure 3. Typical Saturation Voltage
Characteristics
16
12 V
10 V
Figure 2. Typical Output Characteristics (1755C)
Collector−Emitter Voltage, VCE (V)
Figure 1. Typical Output Characteristics (255C)
15 V
120
0
5
20 V
TC = 175°C
15 V
Collector Current, IC (A)
180
20
20
Common Emitter
TC = 175°C
16
12
IC = 20 A
40 A
80 A
8
4
0
0
Figure 5. Saturation Voltage vs VGE (255C)
4
8
12
16
Gate−Emitter Voltage, VGE (V)
Figure 6. Saturation Voltage vs VGE (1755C)
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4
20
AFGB40T65SQDN
TYPICAL CHARACTERISTICS
10000
15
Gate−Emitter Voltage, VGE (V)
Capacitance (pF)
C ies
1000
Coes
100
Cres
10
1
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25°C
1
10
300 V
12
Vcc = 200 V
400 V
9
6
3
0
100
Common Emitter
TC = 25°C
0
25
Collect to Emitter Voltage, VCE (V)
Figure 7. Capacitance Characteristics
50
75
Gate Charge, Gg (nC)
100
Figure 8. Gate Charge Characteristics
100
1000
Switching Time (ns)
Switching Time (ns)
td(off)
tr
td(on)
Common Emitter
VCC = 400 V, VGE = 15 V,
IC = 40 A
TC = 25°C
TC = 175°C
10
0
10
20
30
40
100
tf
1
50
Common Emitter
VCC = 400 V, VGE = 15 V,
IC = 40 A
TC = 25°C
TC = 175°C
10
0
10
Gate Resistance, RG (W)
Figure 9. Turn−On Characteristics vs Gate
Resistance
tr
td(on)
10
Common Emitter
VGE = 15 V, RG = 6 W
TC = 25°C
TC = 175°C
1
0
25
50
75
100
Collector Current, IC (A)
30
40
50
Figure 10. Turn−Off Characteristics vs Gate
Resistance
Switching Time (ns)
Switching Time (ns)
100
20
Gate Resistance, RG (W)
125
tf
10
Common Emitter
VGE = 15 V, RG = 6 W
TC = 25°C
TC = 175°C
1
150
Figure 11. Turn−On Characteristics vs Collector
Current
td(off)
100
0
25
50
75
100
Collector Current, IC (A)
125
150
Figure 12. Turn−Off Characteristics vs Collector
Current
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5
AFGB40T65SQDN
TYPICAL CHARACTERISTICS
10000
10000
Switching Loss (mJ)
Switching Loss (mJ)
Eon
Eon
1000
Eoff
100
0
10
Common Emitter
VCC = 400 V, VGE = 15 V,
IC = 40 A
TC = 25°C
TC = 175°C
20
30
40
Gate Resistance, RG (W)
1000
Eoff
100
10
50
Figure 13. Switching Loss vs Gate Resistance
Common Emitter
VGE = 15 V, RG = 6 W
TC = 25°C
TC = 175°C
0
25
50
75
100
Collector Current, IC (A)
125
150
Figure 14. Switching Loss vs Collector Current
100
10 ms
DC
10
Forward Current, IF (A)
Collector Current, IC (A)
100
100 ms
1 ms
10 ms
1
*Note:
1. TC = 25°C
2. TJ = 175°C
3. Single Pulse
0
0
1
10
100
TJ = 175°C
TJ = 25°C
1
1000
TJ = 75°C
10
0
Collector − Emitter Voltage, VCE (V)
Reverse Recovery Time, trr (ns)
Reverse Recovery Current, Irr (A)
di/dt = 200 A/ms
di/dt = 100 A/ms
di/dt = 200 A/ms
4
di/dt = 100 A/ms
2
0
TC = 25°C
TC = 175°C
0
10
20
30
Forward Current, IF (A)
3
4
Figure 16. Forward Characteristics
10
6
2
Forward Voltage, VF (V)
Figure 15. SOA Characteristics
8
1
TC = 25°C
TC = 75°C
TC = 175°C
40
400
350
300
250
di/dt = 100 A/ms
200
di/dt = 200 A/ms
150
100
TC = 25°C
TC = 175°C
50
0
0
Figure 17. Reverse Recovery Current
10
20
30
Forward Current, IF (A)
Figure 18. Reverse Recovery Time
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6
40
AFGB40T65SQDN
Stored Recovery Charge, Qrr (nC)
TYPICAL CHARACTERISTICS
1400
1200
1000
800
di/dt = 200 A/ms
600
di/dt = 100 A/ms
400
200
TC = 25°C
TC = 175°C
0
0
10
20
30
40
Forward Current, IF (A)
Figure 19. Stored Charge
Thermal Response (Zthjc)
1.00
0.5
0.2
0.10
0.1
0.05
0.02
0.01
0.01
1E−05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (s)
Thermal Response (Zthjc)
Figure 20. Transient Thermal Impedance of IGBT
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
single pulse
0.01
1E−05
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (s)
Figure 21. Transient Thermal Impedance of Diode
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7
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
SCALE 1:1
GENERIC MARKING DIAGRAMS*
XX
XXXXXXXXX
AWLYWWG
IC
DOCUMENT NUMBER:
DESCRIPTION:
XXXXXXXXG
AYWW
Standard
98AON56370E
AYWW
XXXXXXXXG
AKA
Rectifier
XXXXXX
XXYMW
SSG
DATE 11 MAR 2021
XXXXXX = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
W
= Week Code (SSG)
M
= Month Code (SSG)
G
= Pb−Free Package
AKA
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
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