AFGHL25T120RHD

IGBT for Automotive Application 1200 V, 25 A AFGHL25T120RHD Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performance for both hard and soft switching topology in automotive application. www.onsemi.com VCES IC VCE(Sat) 1200 V 25 A 2.0 V (Typ.) C Features • • • • • • • • Extremely Efficient Trench with Field Stop Technology Maximum Junction Temperature: TJ = 175°C Short Circuit Withstand Time 8 ms 100% of the Parts Tested for ILM (Note 2) Fast Switching Tighten Parameter Distribution AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Typical Applications • • • • Automotive HEV−EV e−compressor Automotive HEV−EV PTC heater Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters G E G C E TO−247−3L CASE 340CX MARKING DIAGRAM AFG25T 120RHD $Y&Z&3&K AFG25T120RHD $Y &Z &3 &K = Specific Device Code = ON Semiconductor Logo = Assembly Plant Code = 3−Digit Date Code = 2−Digit Lot Traceability Code ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2021 April, 2021 − Rev. 1 1 Device Package Shipping AFGHL25T120RHD TO−247−3L 30 Units / Rail Publication Order Number: AFGHL25T120RHD/D AFGHL25T120RHD MAXIMUM RATINGS Symbol Value Units Collector to Emitter Voltage Description VCES 1200 V Gate to Emitter Voltage VGES ±20 V Transient Gate to Emitter Voltage ±30 IC Collector Current @ TC = 25°C (Note 1) A 48 Collector Current @ TC = 100°C 25 Pulsed Collector Current (Note 2) ILM 100 A Pulsed Collector Current (Note 3) ICM 100 A IF 48 A Diode Forward Current @ TC = 25°C (Note 1) Diode Forward Current @ TC = 100°C 25 Pulsed Diode Maximum Forward Current IFM 100 A Maximum Power Dissipation @ TC = 25°C PD 261 W Maximum Power Dissipation @ TC = 100°C 130 Short Circuit Withstand Time VGE = 15 V, VCE = 600 V, TJ = 150°C Operating Junction Temperature / Storage Temperature Range Maximum Lead Temp. For Soldering Purposes, ⅛” from case for 5 seconds SCWT 8 ms TJ, TSTG −55 to +175 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limited by bond wire. 2. VCC = 600 V, VGE = 15 V, IC = 100 A, RG = 15 W, Inductive Load, 100% Tested 3. Repetitive rating: pulse width limited by max. Junction temperature. THERMAL CHARACTERISTICS Rating Symbol Max. Units Thermal Resistance, Junction to Case, for IGBT RqJC 0.57 _C/W Thermal Resistance, Junction to Case, Max for Diode RqJC 0.63 _C/W Thermal Resistance, Junction to Ambient, Max RqJA 40 _C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Collector−emitter Breakdown Voltage, Gate−emitter Short−circuited VGE = 0 V, IC = 1mA BVCES 1250 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1mA DBVCES/ DTJ − 1.3 − V/_C Collector−emitter Cut−off Current, Gate−emitter Short−circuited VGE = 0 V, VCE = VCES ICES − − 40 mA Gate Leakage Current, Collector−emitter Short−circuited VGE = VGES, VCE = 0 V IGES − − ±400 nA Gate−emitter Threshold Voltage VGE = VCE, IC = 25 mA VGE(th) 5.3 6.3 7.3 V Collector−emitter Saturation Voltage VGE = 15 V, IC = 25 A VGE = 15 V, IC = 25 A, TJ = 175_C VCE(sat) − − 1.84 2.29 2.4 − V ON CHARACTERISTICS www.onsemi.com 2 AFGHL25T120RHD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Test Conditions Symbol Min. Typ. Max. Unit Cies − 3920 − pF Output Capacitance Coes − 157 − Reverse Transfer Capacitance Cres − 71 − td(on) − 26 − tr − 10 − td(off) − 133 − tf − 106 − Turn−on Switching Loss Eon − 0.9 − Turn−off Switching Loss Eoff − 0.44 − Total Switching Loss Ets − 1.34 − td(on) − 27 − tr − 16 − td(off) − 118 − tf − 101 − Turn−on Switching Loss Eon − 1.94 − Turn−off Switching Loss Eoff − 0.77 − Total Switching Loss Ets − 2.71 − td(on) − 24 − tr − 12 − td(off) − 156 − DYNAMIC CHARACTERISTICS Input Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz SWITCHING CHARACTERISTICS Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 25_C VCC = 600 V, IC = 12.5 A Rg = 5 W VGE = 15 V Inductive Load Fall Time Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 25_C VCC = 600 V, IC = 25 A Rg = 5 W VGE = 15 V Inductive Load Fall Time Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 175_C VCC = 600 V, IC = 12.5 A Rg = 5 W VGE = 15 V Inductive Load Fall Time ns mJ ns mJ ns tf − 280 − Turn−on Switching Loss Eon − 1.42 − Turn−off Switching Loss Eoff − 1.03 − Total Switching Loss Ets − 2.45 − td(on) − 28 − tr − 16 − td(off) − 132 − tf − 208 − Turn−on Switching Loss Eon − 2.87 − Turn−off Switching Loss Eoff − 1.57 − Total Switching Loss Ets − 4.44 − Qg − 189 − Gate to Emitter Charge Qge − 33 − Gate to collector Charge Qgc − 97 − VF − − 1.43 1.44 2.0 − V Erec − 0.46 − mJ Trr − 112 − ns Qrr − 1537 − nC Turn−on Delay Time Rise Time Turn−off Delay Time TJ = 175_C VCC = 600 V, IC = 25 A Rg = TBD VGE = 15 V Inductive Load Fall Time Total Gate Charge VCE = 600 V, IC = 25 A, VGE = 15 V mJ ns mJ nC DIODE CHARACTERISTICS Forward Voltage IF = 25 A, TJ = 25_C IF = 25 A, TJ = 175_C Reverse Recovery Energy TJ = 25_C VR = 600 V, IF = 12.5 A, dIF/dt = 1000 A/ms, Diode Reverse Recovery Time Diode Reverse Recovery Charge www.onsemi.com 3 AFGHL25T120RHD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Test Conditions Symbol Min. Typ. Max. Unit TJ = 25_C VR = 600 V, IF = 25 A, dIF/dt = 1000 A/ms, Erec − 0.75 − mJ Trr − 159 − ns Qrr − 2429 − nC TJ = 175_C VR = 600 V, IF = 12.5 A, dIF/dt = 1000 A/ms, Erec − 1.13 − mJ Trr − 185 − ns Qrr − 3241 − nC Erec − 1.48 − mJ Trr − 214 − ns Qrr − 4233 − nC DIODE CHARACTERISTICS Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Reverse Recovery Energy Diode Reverse Recovery Time TJ = 175_C VR = 600 V, IF = 25 A, dIF/dt = 1000 A/ms, Diode Reverse Recovery Charge Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 AFGHL25T120RHD TYPICAL CHARACTERISTICS 100 VGE = 20 V 15 V 12 V 10 V 8V 7V 80 60 IC, Drain Current (A) IC, Drain Current (A) 100 40 20 0 0 1 2 3 4 VGE = 20 V 15 V 12 V 10 V 8V 7V 80 60 40 20 0 5 1 0 VCE, Collector−Emitter Voltage (V) IC, Collector Current (A) Common Emitter VGE = 15 V TJ = 25°C TJ = 175°C 60 40 20 0 0 1 3 2 4 5 3,5 3 2,5 2 1,5 1 −100 −50 0 5 10 VCE, Collector−Emitter Voltage (V) VCE, Collector−Emitter Voltage (V) 150 100 200 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 12.5 A 25 A 50 A 0 50 TJ, Case Temperature (°C) Figure 3. Typical Saturation Voltage Characteristics 6 4 2 0 5 12.5 A 25 A 50 A VCE, Collector−Emitter Voltage (V) 20 18 16 14 12 10 8 4 Figure 2. Typical Output Characteristics (1755C) Figure 1. Typical Output Characteristics (255C) 80 3 VCE, Drain−Source Voltage (V) VCE, Drain−Source Voltage (V) 100 2 20 15 20 18 16 14 12 10 8 6 4 2 0 12.5 A 25 A 50 A 0 VGE, Gate−Emitter Voltage (V) 5 10 15 VGE, Gate−Emitter Voltage (V) Figure 5. Saturation Voltage vs. VGE (255C) Figure 6. Saturation Voltage vs. VGE (1755C) www.onsemi.com 5 20 AFGHL25T120RHD TYPICAL CHARACTERISTICS (continued) 10000 Vgs, Gate Emitter Voltage (V) Capacitance (pF) 100000 Cies 1000 Coes 100 10 Common Emitter VGE = 0 V, f = 1 MHz TJ = 25°C 0,1 Cres 15,00 VCC = 400 V 600 V 9,00 6,00 3,00 0,00 1 10 0 100 50 VDS, Drain to Source Voltage (V) Switching Time (ns) Switching Time (ns) 10000 td(on), 25°C tr, 25°C td(on), 175°C tr, 175°C 3 13 23 33 43 150 200 250 Figure 8. Gate Charge Characteristics 100 10 100 Qg, Gate Charge (nC) Figure 7. Capacitance Characteristics 1000 500 V 12,00 1000 100 10 53 tf, 25°C td(off), 25°C td(off), 175°C tf, 175°C 1 11 21 31 41 51 Rg, Gate Resistance (W) Rg, Gate Resistance (W) Figure 9. Turn−on Characteristics vs. Gate Resistance Figure 10. Turn−off Characteristics vs. Gate Resistance Switching Time (ns) Switching Time (ns) 100 10 1 tr, 25°C tr, 175°C td(on), 25°C td(on), 175°C 5 15 25 35 200 20 45 tf, 25°C tf, 175°C td(off), 25°C td(off), 175°C 5 15 25 35 45 IC, Collector Current (A) IC, Collector Current (A) Figure 11. Turn−on Characteristics vs. Collector Current Figure 12. Turn−off Characteristics vs. Collector Current www.onsemi.com 6 AFGHL25T120RHD TYPICAL CHARACTERISTICS (continued) 6 4 Switching Loss (mJ) 5 Switching Loss [mJ] 8 Eon, 25°C Eon, 175°C Eoff, 25°C Eoff, 175°C 3 2 1 0 0 10 20 30 40 Eon, 25°C Eon, 175°C Eoff, 25°C Eoff, 175°C 6 4 2 0 50 0 10 20 30 40 50 IC, Collector Current (A) Rg, Gate Resistance (W) Figure 14. Switching Loss vs. Collector Current Figure 13. Switching Loss vs. Gate Resistance 1000 100 10 ms 10 DC IF, Forward Current (A) IC, Collector Current (A) 100 1 ms 100 ms 10 ms 1 *Note: 1. TC = 25°C 2. Tj = 175°C 3. Single Pulse 0 0 1 10 10 1 0,1 0,01 0,001 0,0001 0,0000001 100 1000 25°C 175°C 75°C 0,00001 0,000001 10000 0 0,5 Qrr, Stored Recovery Charge (nC) trr, Reverse Recovery Time (ns) di/dt = 500 A/ms_25°C di/dt = 1000 A/ms_25°C di/dt = 500 A/ms_175°C di/dt = 1000 A/ms_175°C 10 20 30 40 2 2,5 3 Figure 16. Forward Characteristics Figure 15. SOA Characteristics 0 1,5 VF, Forward Voltage (V) VCE, Collector−Emitter Voltage (V) 610 560 510 460 410 360 310 260 210 160 110 60 10 1 50 60 9000 di/dt = 500 A/ms_25°C di/dt = 1000 A/ms_25°C di/dt = 500 A/ms_175°C di/dt = 1000 A/ms_175°C 8000 7000 6000 5000 4000 3000 2000 1000 0 0 10 20 30 40 IF, Forward Current (A) IF, Forward Current (A) Figure 18. Stored Charge Figure 17. Reverse Recovery Time www.onsemi.com 7 50 60 AFGHL25T120RHD TYPICAL CHARACTERISTICS (continued) ZqJC, Typical Thermal Impedance 1 0.5 0,1 0.2 0.1 PDM 0.05 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zqjc + TC R2 R1 0.02 0.01 0,01 Single 0,001 0,00001 t1 i: 1 ri[K/W]: 0.1326 τ[s]: 4.126E-4 0,0001 0,001 0,01 2 0.1923 3.216E-3 3 0.1107 1.951E-2 0,1 1 t, Rectangular Pulse Duration Figure 19. Transient Thermal Impedance of IGBT 1 ZqJC, Typical Thermal Impedance 0.5 0,1 0.2 0.1 PDM 0.05 0,01 Single i: 1 ri[K/W]: 0.01514 τ[s]: 1.423E-5 0,001 0,00001 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zqjc + TC R1 R2 0.02 0.01 0,0001 0,001 2 0.09299 1.386E-4 3 4 0.2178 0.1337 3.266E-3 2.9827E-2 0,01 t, Rectangular Pulse Duration Figure 20. Transient Thermal Impedance of Diode www.onsemi.com 8 0,1 1 AFGHL25T120RHD Figure 21. Test Circuit for Switching Characteristics Figure 22. Definition of Turn On Waveform www.onsemi.com 9 AFGHL25T120RHD Figure 23. Definition of Turn Off Waveform www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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