AFGHL40T65SQ

Field Stop Trench IGBT 40A, 650V AFGHL40T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand−alone IGBT. www.onsemi.com Features • • • • • • • • • AEC−Q101 Qualified Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution RoHS Compliant 40 A, 650 V VCESat = 1.6 V C G E Typical Applications • • • • Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters Totem Pole Bridgeless PFC PTC MAXIMUM RATINGS G Rating Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V IC 80 40 A Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A Maximum Power Dissipation @ TC = 25°C @ TC = 100°C PD 239 119 W TJ, TSTG −55 to +175 °C TL 300 °C Collector Current (Note 1) @ TC = 25°C @ TC = 100°C Operating Junction / Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 160 A, RG = 15 W, Inductive Load 3. Repetitive Rating: pulse width limited by max. Junction temperature C E TO−247−3L CASE 340CX MARKING DIAGRAM &Z&3&K AFGHL 40T65SQ &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digit Lot Traceability Code AFGHL40T65SQ = Specific Device Code ORDERING INFORMATION Device AFGHL40T65SQ © Semiconductor Components Industries, LLC, 2019 January, 2020 − Rev. 1 1 Package Shipping TO−247−3L 30 Units / Rail Publication Order Number: AFGHL40T65SQ/D AFGHL40T65SQ THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.63 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C OFF CHARACTERISTICS DBVCES DTJ Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector− emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA VGE = VCE, IC = 40 mA VGE(th) 3.4 4.9 6.4 V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCE(sat) − − 1.6 1.95 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 2312 − pF Coes − 30 − Cres − 8 − Qg − 68 − Qge − 13 − Qgc − 16 − td(on) − 15 − tr − 10 − td(off) − 70 − tf − 3 − Eon − 0.25 − Eoff − 0.09 − ON CHARACTERISTICS Gate−emitter threshold voltage Collector−emitter saturation voltage DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate−to−emitter charge VCE = 400 V, IC = 40 A, VGE = 15 V Gate−to−collector charge nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TC = 25°C, VCC = 400 V, IC = 20 A, RG = 6 W, VGE = 15 V, Inductive Load, FWD: AFGHL40T65SQD Turn−off switching loss Total switching loss Ets − 0.34 − td(on) − 17 − tr − 22 − td(off) − 67 − tf − 31 − Eon − 0.75 − Turn−off switching loss Eoff − 0.29 − Total switching loss Ets − 1.04 − Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TC = 25°C, VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load, FWD: AFGHL40T65SQD www.onsemi.com 2 ns mJ ns mJ AFGHL40T65SQ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Continued) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 14 − ns tr − 12 − td(off) − 81 − tf − 7 − Eon − 0.46 − Turn−off switching loss Eoff − 0.22 − Total switching loss Ets − 0.68 − td(on) − 16 − tr − 25 − td(off) − 75 − tf − 38 − Eon − 1.06 − Turn−off switching loss Eoff − 0.47 − Total switching loss Ets − 1.53 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C, VCC = 400 V, IC = 20 A, RG = 6 W, VGE = 15 V, Inductive Load, FWD: AFGHL40T65SQD TJ = 175°C, VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load, FWD: AFGHL40T65SQD mJ ns mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGHL40T65SQ TYPICAL CHARACTERISTICS 200 200 T C = 25°C 160 12V Collector Current, I C [A] Collector Current, IC [A] 15V 15V 160 10V 120 V GE = 8V 80 40 0 0 10V 120 80 V GE = 8V 40 0 0 5 1 2 3 4 Collector−Emitter Voltage, VCE [V] 12V 1 Figure 1. Typical Output Characteristics Common Emitter V GE = 15V Common Emitter V GE = 15V T C = 175°C 120 80 40 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] 80A 2.0 40A I C = 20A 1.0 5 −100 20 Common Emitter T C = 25°C Collector −Emitter Voltage, VCE [V] Collector − Emitter Voltage, VCE [V] 0 12 8 80A 40A 4 IC = 20A 4 50 100 150 200 Figure 4. Saturation Voltage vs. Case Temperature 16 0 −50 Collector−Emitter Case Temperature, TC [ °C] Figure 3. Typical Saturation Voltage 20 5 3.0 T C = 25°C 160 0 2 3 4 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics Collector −Emitter Voltage, VCE [V] Collector Current, IC [A] 200 20V T C = 175°C 20V 8 12 16 Gate−Emitter Voltage, VGE [V] 16 12 8 IC = 20A 40A 80A 4 0 4 20 Common Emitter T C = 175°C Figure 5. Saturation Voltage vs. VGE 8 12 16 Gate−Emitter Voltage, V GE [V] Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 20 AFGHL40T65SQ TYPICAL CHARACTERISTICS 10000 15 Common Emitter C ies Gate − Emitter Voltage, VGE [V] Capacitance [pF] 1000 C oes 100 C res 10 Common Emitter V GE = 0V, f = 1Mhz T C = 25°C 1 1 300V T C = 25°C 10 Collector−Emitter Voltage, VCE [V] 12 V CC = 200V 9 6 3 0 30 400V 0 25 Figure 7. Capacitance Characteristics 50 Gate Charge, Q g [nC] 75 100 Figure 8. Gate Charge 1000 100 t d(off) Common Emitter V CC = 400V, VGE = 15V IC = 40A T C = 25°C T C = 175°C td(on) 10 0 10 Switching Time [ns] Switching Time [ns] tr 20 30 Gate Resistance, R g [ W ] 40 100 tf 10 1 0 50 Figure 9. Turn−On Characteristics vs. Gate Resistance Common Emitter V CC = 400V, V GE = 15V, IC = 40A T C = 25°C T C = 175°C 10 20 30 Gate Resistance, R g [ W ] 50 40 Figure 10. Turn−Off Characteristics vs. Gate Resistance 500 200 100 Switching Time [ns] Switching Time [ns] tr td(on) 10 Common Emitter VCC = 400V, VGE = 15V, RG = 6 W TC = 25°C TC = 175°C 1 0 30 60 Collector Current, I C [A] 90 tf 10 1 0 120 t d(off) 100 Figure 11. Turn−On Characteristics vs. Collector Current Common Emitter V CC = 400V, V GE = 15V, RG = 6 W T C = 25°C T C = 175°C 30 60 90 Collector Current, IC [A] Figure 12. Turn−Off Characteristics vs. Collector Current www.onsemi.com 5 120 AFGHL40T65SQ TYPICAL CHARACTERISTICS 5 10 E on Switching Loss [mJ] Switching Loss [mJ] E on 1 Common Emitter V CC = 400V, V GE = 15V, I C = 40A T C = 25°C E off 0.1 T C = 175°C 0 10 20 30 40 1 E off 0.1 Common Emitter V CC = 400V, V GE = 15V, RG = 6 W T C = 25°C T C = 175°C 0.01 50 0 Gate Resistance, R g [ W ] Figure 13. Switching Loss vs. Gate Resistance 30 60 90 Collector Current, I C [A] 120 Figure 14. Switching Loss vs. Collector Current 300 Collector Current, IC [A] 100 DC 10 ms 100 ms 1ms 10 1 0.1 1 10ms *Notes: 1. T C = 25°C 2. T J = 175°C 3. Single Pulse 10 100 Collector − Emitter Voltage, VCE [V] 1000 Figure 15. SOA Characteristics Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 Notes: Duty Factor, D = t1/t2 Peak TJ = PDM x ZqJC (t) + TC P DM 0.05 0.02 0.01 0.01 t1 t2 Single Pulse 10−5 10 −4 10 −3 10−2 10−1 Rectangular Pulse Duration [sec] Figure 16. transient Thermal Impedance of IGBT www.onsemi.com 6 100 101 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. 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