AFGHL40T65SQD

Field Stop Trench IGBT 40A, 650V AFGHL40T65SQD Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. www.onsemi.com Features • • • • • • • • • AEC−Q101 Qualified Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution RoHS Compliant 40 A, 650 V, VCESat = 1.6 V C G E Typical Applications • • • • Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters Totem Pole Bridgeless PFC PTC MAXIMUM RATINGS G Rating Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V IC 80 40 A Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A IF 80 20 A IFM(2) 160 A PD 238 119 W TJ, TSTG −55 to +175 °C TL 300 °C Collector Current (Note 1) Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C @ TC < 25°C @ TC < 100°C Pulsed Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C @ TC = 100°C Operating Junction / Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 160 A, RG = 15 W, Inductive Load 3. Repetitive Rating: pulse width limited by max. Junction temperature © Semiconductor Components Industries, LLC, 2019 June, 2020 − Rev. 2 1 C E TO−247−3L CASE 340CX MARKING DIAGRAM &Z&3&K AFGHL 40T65SQD &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digit Lot Traceability Code AFGHL40T65SQD = Specific Device Code ORDERING INFORMATION Device AFGHL40T65SQD Package Shipping TO−247−3L 30 Units / Rail Publication Order Number: AFGHL40T65SQD/D AFGHL40T65SQD THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.63 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.71 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C Parameter OFF CHARACTERISTICS DBVCES DTJ Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector− emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA VGE = VCE, IC = 40 mA VGE(th) 3.4 4.9 6.4 V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCE(sat) − − 1.6 1.95 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 2339 − pF Coes − 61 − Cres − 8 − Qg − 68 − Qge − 13 − Qgc − 16 − td(on) − 15 − tr − 10 − td(off) − 70 − tf − 3 − Turn−on switching loss Eon − 0.25 − Turn−off switching loss Eoff − 0.09 − Total switching loss Ets − 0.34 − td(on) − 17 − tr − 22 − td(off) − 67 − tf − 31 − Turn−on switching loss Eon − 0.75 − Turn−off switching loss Eoff − 0.29 − Total switching loss Ets − 1.04 − ON CHARACTERISTICS Gate−emitter threshold voltage Collector−emitter saturation voltage DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate−to−emitter charge VCE = 400 V, IC = 40 A, VGE = 15 V Gate−to−collector charge nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TC = 25°C, VCC = 400 V, IC = 20 A, RG = 6 W, VGE = 15 V, Inductive Load TC = 25°C, VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load www.onsemi.com 2 ns mJ ns mJ AFGHL40T65SQD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Continued) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 14 − ns tr − 12 − td(off) − 81 − tf − 7 − Turn−on switching loss Eon − 0.46 − Turn−off switching loss Eoff − 0.22 − Total switching loss Ets − 0.68 − td(on) − 16 − tr − 25 − td(off) − 75 − tf − 38 − Turn−on switching loss Eon − 1.06 − Turn−off switching loss Eoff − 0.47 − Total switching loss Ets − 1.53 − VFM − 2.0 2.6 − 1.75 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TC = 175°C, VCC = 400 V, IC = 20 A, RG = 6 W, VGE = 15 V, Inductive Load TC = 175°C, VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load mJ ns mJ DIODE CHARACTERISTICS Diode Forward Voltage IF = 20 A, TC = 25°C IF = 20 A, TC = 175°C V Reverse Recovery Energy IF = 20 A, dlF/dt = 200 A/ms, TC = 175°C Erec − 54 − mJ Diode Reverse Recovery Time IF = 20 A, dlF/dt = 200 A/ms, TC = 25°C Trr − 28 − ns IF = 20 A, dlF/dt = 200 A/ms, TC = 175°C Trr − 209 − IF = 20 A, dlF/dt = 200 A/ms, TC = 25°C Qrr − 38 − IF = 20 A, dlF/dt = 200 A/ms, TC = 175°C Qrr − 605 − Diode Reverse Recovery Charge nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGHL40T65SQD TYPICAL CHARACTERISTICS 200 200 T C = 25°C 12V Collector Current, IC [A] Collector Current, I C [A] 15V 15V 160 10V 120 V GE = 8V 80 40 0 0 1 2 3 Collector−Emitter Voltage, VCE [V] 4 160 12V 10V 120 80 V GE = 8V 40 0 0 5 1 Figure 1. Typical Output Characteristics Collector Current, I C [A] Common Emitter V GE = 15V T C = 175°C 120 80 40 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] Common Emitter V GE = 15V 80A 2.0 40A I C = 20A 1.0 −100 5 Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 20 16 12 80A 40A 4 0 IC = 20A 4 8 12 0 50 100 150 200 Figure 4. Saturation Voltage vs. Case Temperature Common Emitter TC = 25°C 8 −50 Collector−Emitter Case Temperature, TC [ °C] Figure 3. Typical Saturation Voltage 20 5 3.0 T C = 25°C 160 0 2 3 4 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics Collector −Emitter Voltage, VCE [V] 200 20V T C = 175°C 20V 16 12 IC = 20A 8 40A 80A 4 0 20 16 Common Emitter T C = 175°C Gate−Emitter Voltage, VGE [V] 4 8 12 16 Gate−Emitter Voltage, V GE [V] Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 20 AFGHL40T65SQD TYPICAL CHARACTERISTICS 10000 15 Common Emitter C ies Gate −Emitter Voltage, VGE [V] Capacitance [pF] 1000 C oes 100 C res 10 1 1 Common Emitter V GE = 0V, f = 1Mhz T C = 25°C Collector−Emitter Voltage, V 10 CE 300V T C = 25°C 400V V CC = 200V 9 6 3 0 30 [V] 12 0 25 Figure 7. Capacitance Characteristics 50 Gate Charge, Q g [nC] Figure 8. Gate Charge 100 1000 Common Emitter V CC = 400V, VGE = 15V IC = 40A T C = 25°C T C = 175°C td(on) 0 10 Switching Time [ns] Switching Time [ns] tr 10 100 75 20 30 40 Gate Resistance, R g [ W] t d(off) 100 tf Common Emitter V CC = 400V, V GE = 15V, IC = 40A T C = 25°C T C = 175°C 10 50 0 Figure 9. Turn−On Characteristics vs. Gate Resistance 10 20 30 Gate Resistance, R g [ W ] 40 50 Figure 10. Turn−Off Characteristics vs. Gate Resistance 200 1000 tr Switching Time [ns] Switching Time [ns] 100 td(on) 10 1 0 Common Emitter VCC = 400V, VGE = 15V, RG = 6 W TC = 25°C TC = 175°C 30 60 90 Collector Current, I C [A] 100 tf 10 1 0 120 t d(off) Figure 11. Turn−On Characteristics vs. Collector Current Common Emitter V CC = 400V, V GE = 15V, RG = 6 W T C = 25°C T C = 175°C 30 60 Collector Current, I C [A] 90 Figure 12. Turn−Off Characteristics vs. Collector Current www.onsemi.com 5 120 AFGHL40T65SQD TYPICAL CHARACTERISTICS 5 10 E on Switching Loss [mJ] Switching Loss [mJ] E on 1 E off Common Emitter V CC = 400V, V GE = 15V, I C = 40A T C = 25°C T C = 175°C 0.1 0 10 20 30 E off 0.1 Common Emitter V CC = 400V, V GE = 15V, RG = 6 W T C = 25°C T C = 175°C 0.01 50 40 1 0 Gate Resistance, R g [ W ] Figure 13. Switching Loss vs. Gate Resistance DC 10 ms T C = 175°C Forward Current, I F [A] Collector Current, IC [A] 80 100 ms 1ms 10 1 0.1 1 10ms *Notes: 1. T C = 25°C 2. T J = 175°C 3. Single Pulse 10 100 Collector − Emitter Voltage, VCE [V] T C = 75°C 10 T C = 25°C 1 1000 0 6 di/dt = 200A/uS 4 di/dt = 100A/uS 2 di/dt = 200A/uS Reverse Recovery Time, t rr [ns] T C = 25°C T C = 175°C di/dt = 100A/uS 0 0 2 3 Forward Voltage, VF [V] 4 5 350 10 8 1 Figure 16. Forward Characteristics Figure 15. SOA Characteristics Reverse Recovery Current, Irr [A] 120 60 90 Collector Current, I C [A] Figure 14. Switching Loss vs. Collector Current 300 100 30 10 20 30 Forward Current, V F [V] 40 T C = 25°C T C = 175°C 280 210 di/dt = 100A/uS 140 di/dt = 200A/uS 70 0 0 10 20 30 Forward Current, VF [V] Figure 18. Reverse Recovery Time Figure 17. Reverse Recovery Current www.onsemi.com 6 40 AFGHL40T65SQD TYPICAL CHARACTERISTICS Reverse Recovery Charge, Q rr [nC] 1000 T C = 25°C T C = 175°C 800 600 400 di/dt = 100A/uS di/dt = 200A/uS 200 0 0 10 20 30 Forward Current, VF [V] 40 Figure 19. Stored Charge 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.2 0.05 Notes: Duty Factor, D = t1/t2 Peak TJ = PDM x ZqJC (t) + TC P DM 0.02 0.01 t1 t2 Single Pulse 0.01 10 −5 10 −4 10 −3 10 −2 10 −1 10 0 10 1 Rectangular Pulse Duration [sec] Figure 20. Transient Thermal Impedance of IGBT 2 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 Notes: Duty Factor, D = t1/t2 Peak TJ = PDM x ZqJC (t) + TC P DM 0.01 t1 Single Pulse 0.01 10 −5 t2 10 −4 10 −3 10−2 10 −1 Rectangular Pulse Duration [sec] Figure 21. Transient Thermal Impedance of Diode www.onsemi.com 7 100 10 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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