AFGHL50T65SQDC

Hybrid IGBT, 50A, 650V AFGHL50T65SQDC Using the novel field stop 4th generation IGBT technology and the 1 . 5 t h g e n e r a t i o n S i C S c h o t t k y D i o d e t e c h n o l o g y, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter. Features • • • • • • • • AEC−Q101 Qualified Maximum Junction Temperature : TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @IC = 50 A Fast Switching Tighten Parameter Distribution No Reverse Recovery/No Forward Recovery www.onsemi.com 50 A, 650 V VCESat = 1.6 V (Typ.) C G Typical Applications • • • • • E Automotive On & Off Board Chargers DC−DC Converters PFC Industrial Inverter G MAXIMUM RATINGS C E Rating Symbol Value Unit Collector to Emitter Voltage VCES 650 V Gate to Emitter Voltage Transient Gate to Emitter Voltage VGES ±20 ±30 V IC 100 50 A Pulsed Collector Current (Note 1) ILM 200 A Pulsed Collector Current (Note 2) ICM 200 A IF 40 20 A Pulsed Diode Maximum Forward Current IFM 200 A Maximum Power Dissipation @TC = 25°C @TC = 100°C PD 238 119 W TJ, TSTG ±55 to +175 °C TL 300 °C Collector Current Diode Forward Current @TC = 25°C @TC = 100°C @TC = 25°C @TC = 100°C Operating Junction / Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 26 W, Inductive Load, 100% Tested. 2. Repetitive Rating: pulse width limited by max. Junction temperature. © Semiconductor Components Industries, LLC, 2019 January, 2021 − Rev. 3 TO−247−3L CASE 340CX 1 &Y&Z&3&K AFGHL 50T65SQDC &Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Data Code &K = 2−Digit Lot Traceability Code AFGHL50T65SQDC = Specific Device Code ORDERING INFORMATION Device Package Shipping AFGHL50T65SQDC TO−247−3L 30 Units / Rail Publication Order Number: AFGHL50T65SQDC/D AFGHL50T65SQDC THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.63 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.55 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Test Conditions Symbol Min. Typ. Max. Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C Parameter OFF CHARACTERISTICS DBVCES DTJ Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA Gate−emitter threshold voltage VGE = VCE, IC = 50 mA VGE(th) 3.4 4.9 6.4 V Collector−emitter saturation voltage VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCE(sat) − − 1.6 1.9 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 3098 − pF Coes − 265 − Cres − 9 − Qg − 94 − Qge − 18 − Qgc − 23 − td(on) − 17.6 − tr − 6.4 − td(off) − 94.4 − tf − 14.4 − Turn−on switching loss Eon − 131 − Turn−off switching loss Eoff − 96 − ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 400 V, IC = 50 V, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTICS Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 12.5 A RG = 4.7 W VGE = 15 V Inductive Load Total switching loss Ets − 227 − td(on) − 19.2 − tr − 11.2 − td(off) − 89.6 − tf − 6.4 − Turn−on switching loss Eon − 311 − Turn−off switching loss Eoff − 141 − Total switching loss Ets − 452 − Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 400 V, IC = 25 A RG = 4.7 W VGE = 15 V Inductive Load www.onsemi.com 2 ns mJ ns mJ AFGHL50T65SQDC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min. Typ. Max. Unit TJ = 175°C VCC = 400 V, IC = 12.5 A RG = 4.7 W VGE = 15 V Inductive Load td(on) − 16 − ns tr − 8 − td(off) − 107.2 − tf − 53.6 − Turn−on switching loss Eon − 157 − Turn−off switching loss Eoff − 193 − Total switching loss Ets − 350 − td(on) − 17.6 − tr − 14.4 − td(off) − 99.2 − tf − 9.6 − Turn−on switching loss Eon − 350 − Turn−off switching loss Eoff − 328 − Total switching loss Ets − 678 − SWITCHING CHARACTERISTICS Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TJ = 175°C VCC = 400 V, IC = 25 A RG = 4.7 W VGE = 15 V Inductive Load mJ ns mJ DIODE CHARACTERISTICS Forward voltage IF = 20 A IF = 20 A, TJ = 175°C VF − 1.45 1.83 1.75 − V Total Capacitance VR = 400 V, f = 1 MHz C − 103 − pF − 99 − VR = 600 V, f = 1 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGHL50T65SQDC TYPICAL CHARACTERISTICS 200 TC = 25°C 20 V 15 V 12 V 10 V 150 Collector Current, IC [A] Collector Current, IC [A] 200 VGE = 8 V 100 50 0 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] 150 0 0 5 200 Common Emitter VCE = 20 V TC = 25°C TC = 175°C 80 60 40 20 150 100 0 0 2 4 6 8 Common Emitter VGE = 15 V TC = 25°C TC = 175°C 50 10 0 1 2 3 4 5 Collector−Emitter Voltage, VCE [V] Collector Current, IC [A] Figure 3. Transfer Characteristics Figure 4. Typical Saturation Voltage Characteristics 20 Common Emitter VGE = 15 V Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V] 1 2 3 4 Collector−Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics ¨ (TC = 1755C) Collector Current, IC [A] Gate−Emitter Voltage, VGE [V] VGE = 8 V 50 5 100 5 20 V 15 V 12 V 10 V 100 Figure 1. Typical Output Characteristics (TC = 255C) 0 TC = 175°C 4 3 100 A 50 A 2 1 −100 IC = 20 A −50 0 50 100 150 Common Emitter TC = 25°C 16 12 100 A 8 50 A IC = 25 A 4 0 200 Collector−Emitter Case Temperature, TC [°C] 4 8 12 16 20 Gate−Emitter Voltage, VGE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE (TC = 255C) www.onsemi.com 4 AFGHL50T65SQDC TYPICAL CHARACTERISTICS (continued) Common Emitter TC = 175°C 16 10000 Capacitance [pF] Collector−Emitter Voltage, VCE [V] 20 12 100 A 8 50 A IC = 25 A 4 0 4 8 Cies 1000 Coes 100 12 16 1 20 1 Gate−Emitter Voltage, VGE [V] Figure 7. Saturation Voltage vs. VGE (TC = 1755C) 100 12 300 V 400 A 9 6 3 tr td(on) 10 Common Emitter VCC = 400 V, VGE = 15 V IC = 50 A TC = 25°C TC = 175°C Common Emitter TC = 25°C 0 20 40 60 80 1 100 5 15 25 35 45 50 Gate Charge, QG [nC] Gate Resistance, RG [W] Figure 9. Gate Charge Characteristics (TC = 255C) Figure 10. Turn−on Characteristics vs. Gate Resistance 200 1000 100 td(on) Switching Time [ns] Switching Time [ns] 30 200 VCC = 200 A Switching Time [ns] Gate−Emitter Voltage, VGE [V] 10 Collector−Emitter Voltage, VCE [V] Figure 8. Capacitance Characteristics 15 0 Cres Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 10 100 10 5 tr Common Emitter VCC = 400 V, VGE = 15 V IC = 50 A TC = 25°C TC = 175°C 15 25 35 45 td(on) 10 1 50 Gate Resistance, RG [W] Figure 11. Turn−Off Characteristics vs. Resistance www.onsemi.com 5 tr Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W TC = 25°C TC = 175°C 0 30 60 90 120 Collector Current, IC [A] 150 Figure 12. Turn−On Characteristics vs. Collector Current AFGHL50T65SQDC TYPICAL CHARACTERISTICS (continued) 1000 5000 Switching Loss [mJ] Switching Time [ns] tr 100 td(on) Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W TC = 25°C TC = 175°C 10 1 0 30 60 90 120 1000 15 25 35 Gate Resistance, RG [W] Figure 13. Turn−Off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Gate Resistance 100 Collector Current, IC [A] Eoff Common Emitter VCC = 400 V, VGE = 15 V RG = 4.7 W TC = 25°C TC = 175°C 100 0 30 60 90 120 Collector Current, IC [A] Diode Fowrad Current, IF [A] TC = 75°C TC = 125°C TC = 175°C 10 1 2 *Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 1 1 10 100 1000 Collector−Emitter Voltage, VCE [V] 50 TC = 25°C 0 10 ms Figure 16. SOA Characteristics (FBSOA) 150 100 100 ms 10 ms 10 0.1 150 DC 1 ms Figure 15. Switching Loss vs. Collector Current 1 45 300 1000 10 5 50 Collector Current, IC [A] Eon Forward Current, IF [A] Eoff Common Emitter VCC = 400 V, VGE = 15 V IC = 50 A TC = 25°C TC = 175°C 100 150 10000 Switching Loss [mJ] Eon 3 4 40 30 20 10 0 5 Forward Voltage, VF [V] 25 50 75 100 125 150 175 Collector−Emitter Case Temperature, TC [°C] Figure 18. (Diode) Current Derating Figure 17. (Diode) Forward Characteristics vs. (Normal I−V) www.onsemi.com 6 AFGHL50T65SQDC TYPICAL CHARACTERISTICS (continued) Diode Power Dissipation, PTOT [W] 180 150 120 90 60 30 0 25 50 75 100 125 150 175 Collector−Emitter Case Temperature, TC [°C] Figure 19. (Diode) Power Derating Output Capacitance [pF] 10000 Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 1000 100 10 0,1 1 10 100 650 Collector−Emitter Voltage, VCE [V] Figure 20. (Diode) Output Capacitance (Coes) vs. Reverse Voltage Capacitance Energy, EOSS [mJ] 30 20 10 0 0 100 200 300 400 500 600 650 Collector−Emitter Voltage, VCE [V] Figure 21. Output Capacitance Stored Energy www.onsemi.com 7 AFGHL50T65SQDC Thermal Response [Zthjc] 5 1 0.5 0.1 0.01 0.2 PDM 0.1 0.05 0.02 0.01 Single Pulse 10−5 t1 t2 Duty Factor, D = t1 / t2 Peak TJ = Pdm × Zthjc + TC 10−4 10−3 10−2 10−1 100 101 Rectangular Pulse Duration [sec] Figure 22. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 5 1 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 Single Pulse t1 t2 Duty Factor, D = t1 / t2 Peak TJ = Pdm × Zthjc + TC 0.01 10−5 10−4 10−3 10−2 10−1 100 Rectangular Pulse Duration [sec] Figure 23. Transient Thermal Impedance of Diode www.onsemi.com 8 101 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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