AFGY100T65SPD

Field Stop Trench IGBT with Soft Fast Recovery Diode 100A, 650V AFGY100T65SPD AFGY100T65SPD which is AEC Q101 qualified offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance current sharing. www.onsemi.com 100 A, 650 V, VCESat = 1.6 V Features • • • • • • • • • AEC−Q101 Qualified Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 100 A Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating Tight Parameter Distribution High Input Impedance 100% of the Parts are Tested for ILM Short Circuit Ruggedness Co−packed with Soft Fast Recovery Diode C G E Typical Applications • • • • Traction Inverter for HEV/EV Auxiliary DC/AC Converters Motor Drives Other Power−Train Applications Requiring High Power Switch G C E MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V IC 120 100 A Pulsed Collector Current ILM 300 A Pulsed Collector Current ICM 300 A Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C IF 120 100 A Maximum Power Dissipation PD 660 330 W SCWT 6 ms Collector Current (Note 1) @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C Short Circuit Withstand Time @ TC = 25°C Voltage Transient Ruggedness (Note 2) Operating Junction / Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds dV/dt 10 V/ns TJ, TSTG −55 to +175 °C TL 265 °C July, 2020 − Rev. 0 MARKING DIAGRAM $Y&Z&3&K AFGY100T 65SPD $Y &Z &3 &K AFGY100T65SPD = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = Specific Device Code ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 300 A, Inductive Load © Semiconductor Components Industries, LLC, 2020 TO−247−3LD CASE 340CU 1 Device AFGY100T65SPD Package Shipping TO−247−3LD 30 Units / Tube Publication Order Number: AFGY100T65SPD/D AFGY100T65SPD THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.23 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.40 Thermal resistance junction−to−ambient RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C Parameter OFF CHARACTERISTICS DBVCES DTJ Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 40 mA Gate leakage current, collector− emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±250 nA VGE = VCE, IC = 100 mA VGE(th) 4.3 5.3 6.3 V VGE = 15 V, IC = 100 A VGE = 15 V, IC = 100 A, TJ = 175°C VCE(sat) − − 1.6 2.15 2.05 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 4220 − pF Coes − 302 − Cres − 38 − f = 1 MHz RG − 3 − W VCE = 400 V, IC = 100 A, VGE = 15 V Qg − 109 164 nC Qge − 34 − Qgc − 36 − td(on) − 36 − tr − 92 − td(off) − 78 − tf − 106 − Turn−on switching loss Eon − 5.1 − Turn−off switching loss Eoff − 2.7 − Total switching loss Ets − 7.8 − td(on) − 32 − tr − 96 − td(off) − 84 − ON CHARACTERISTICS Gate−emitter threshold voltage Collector−emitter saturation voltage DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance Internal Gate Resistance Gate charge total Gate−to−emitter charge Gate−to−collector charge SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C, VCC = 400 V, IC = 100 A, RG = 5.0 W, VGE = 15 V, Inductive Load TJ = 175°C, VCC = 400 V, IC = 100 A, RG = 5.0 W, VGE = 15 V, Inductive Load tf − 156 − Turn−on switching loss Eon − 7.9 − Turn−off switching loss Eoff − 4.0 − Total switching loss Ets − 11.9 − www.onsemi.com 2 ns mJ ns mJ AFGY100T65SPD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Continued) Parameter Test Conditions Symbol Min Typ Max Unit IF = 100 A, TJ = 25°C VFM − 1.3 1.6 V − 1.25 − − 383 − − 1668 − − 105 − − 208 − − 2090 − − 6974 − DIODE CHARACTERISTIC Diode Forward Voltage IF = 100 A, TJ = 175°C Reverse Recovery Energy IF = 100 A, dlF/dt = 1000 A/ms, VCE = 400 V, TJ = 25°C Erec IF = 100 A, dlF/dt = 1000 A/ms, VCE = 400 V, TJ = 175°C Diode Reverse Recovery Time IF = 100 A, dlF/dt = 1000 A/ms, VCE = 400 V, TJ = 25°C Trr IF = 100 A, dlF/dt = 1000 A/ms, VCE = 400 V, TJ = 175°C Diode Reverse Recovery Charge IF = 100 A, dlF/dt = 1000 A/ms, VCE = 400 V, TJ = 25°C IF = 100 A, dlF/dt = 1000 A/ms, VCE = 400 V, TJ = 175°C Qrr mJ ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGY100T65SPD TYPICAL CHARACTERISTICS 200 10 V 150 100 VGE = 8 V 50 0 2 4 6 IC, COLLECTOR CURRENT (A) 150 100 50 Common Emitter VGE = 15 V 0 1 2 3 4 VGE = 8 V 50 0 2 4 6 8 80 60 40 20 0 5 Common Emitter VGE = 15 V TC = 175°C 0 3 TC = 25°C 6 9 12 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics Common Emitter VGE = 15 V 200 A 2.5 2.0 100 A 1.5 IC = 50 A 25 100 100 200 1.0 10 V 150 Figure 2. Typical Output Characteristics TC = 175°C 3.0 200 Figure 1. Typical Output Characteristics TC = 25°C 3.5 12 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 250 0 15 V 250 0 8 20 V TC = 175°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 300 IC, COLLECTOR CURRENT (A) 300 TC = 25°C 12 V 250 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) 15 V IC, COLLECTOR CURRENT (A) 20 V VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 300 50 75 100 125 150 175 10 IC = 50 A 100 A 200 A Common Emitter TC = −40°C 8 6 4 2 0 6 8 10 12 14 TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C) VGE, GATE−EMITTER VOLTAGE (V) Figure 5. Saturation Voltage vs. Case Temperature Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 16 AFGY100T65SPD 10 IC = 50 A 100 A 200 A VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS Common Emitter TC = 25°C 8 6 4 2 0 6 8 10 12 14 16 8 Common Emitter TC = 175°C 200 A 6 4 2 0 6 8 10 12 14 16 Figure 7. Saturation Voltage vs. VCE Figure 8. Saturation Voltage vs. VCE 15 VGE, GATE−EMITTER VOLTAGE (V) CAPACITANCE (pF) 100 A VGE, GATE−EMITTER VOLTAGE (V) Cies 1K Coes 100 Cres Common Emitter VGE = 0 V, f = 1 MHz TC = 25°C 0.1 1 10 30 Common Emitter TC = 25°C 12 390 V VCC = 260 V 325 V 9 6 3 0 0 20 40 60 80 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics 120 500 1000 TC = 25°C TC = 175°C 100 SWITCHING TIME (ns) IC, COLLECTOR CURRENT (A) IC = 50 A VGE, GATE−EMITTER VOLTAGE (V) 10K 10 10 10 ms 100 ms 10 1 ms 1 0.1 Single Nonrepetitive Pulse TC = 25°C, Curves must be derated linearly with increase in temperature 1 10 100 tr td(on) Common Emitter VCC = 400 V, VGE = 15 V IC = 100 A DC 100 1000 10 0 10 20 30 40 VCE, COLLECTOR−EMITTER VOLTAGE (V) Rg, GATE RESISTANCE (W) Figure 11. SOA Characteristics Figure 12. Turn−On Characteristics vs. Gate Resistance www.onsemi.com 5 50 AFGY100T65SPD TYPICAL CHARACTERISTICS 1000 TC = 25°C TC = 175°C SWITCHING TIME (ns) SWITCHING TIME (ns) 1000 td(off) 100 10 tf Common Emitter VCC = 400 V, VGE = 15 V IC = 100 A 0 10 20 40 60 0 40 80 120 Figure 13. Turn−Off Characteristics vs. Gate Resistance Figure 14. Turn−On Characteristics vs. Collector Current 160 TC = 25°C TC = 175°C SWITCHING LOSS (mJ) tf td(off) 100 Common Emitter VCC = 400 V, VGE = 15 V RG = 5 W 0 40 80 120 Eon Eoff Common Emitter VCC = 400 V, VGE = 15 V IC = 100 A 0 10 20 30 40 50 IC, COLLECTOR CURRENT (A) Rg, GATE RESISTANCE (W) Figure 15. Turn−Off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 300 TC = 25°C TC = 175°C Eon 10 Eoff 1 Common Emitter VCC = 400 V, VGE = 15 V RG = 5 W 0 10 1 160 IF, FORWARD CURRENT (A) SWITCHING TIME (ns) Common Emitter VCC = 400 V, VGE = 15 V RG = 5 W 50 100 SWITCHING LOSS (mJ) 10 IC, COLLECTOR CURRENT (A) TC = 25°C TC = 175°C 0.1 td(on) Rg, GATE RESISTANCE (W) 1000 10 tr 100 1 80 TC = 25°C TC = 175°C 20 40 60 80 100 100 1 0.1 120 TC = 125°C 10 T = 175°C C TC = 25°C 0 0.5 1.0 1.5 2.0 IC, COLLECTOR CURRENT (A) VF, FORWARD VOLTAGE (V) Figure 17. Switching Loss vs. Collector Current Figure 18. Forward Characteristics www.onsemi.com 6 2.5 AFGY100T65SPD TYPICAL CHARACTERISTICS Qrr, REVERSE RECOVERY CHARGE (nC) IR, REVERSE CURRENT (mA) 10,000 TC = 175°C 1000 10 1 TC = 25°C 0.1 0.01 50 150 250 350 450 550 650 di/dt = 1000 A/ms di/dt = 500 A/ms di/dt = 1000 A/ms di/dt = 500 A/ms 1K 100 TC = 25°C TC = 175°C 0 20 40 60 80 VF, FORWARD CURRENT (V) Figure 19. Reverse Current Figure 20. Stored Charge 100 120 800 300 di/dt = 500 A/ms 250 di/dt = 1000 A/ms 200 150 di/dt = 500 A/ms 100 di/dt = 1000 A/ms 50 0 10K VR, REVERSE VOLTAGE (V) TC = 25°C TC = 175°C 0 20 40 60 80 100 BVCES, COLLECTOR−TO−EMITTER BREAKDOWN VOLTAGE (V) trr, REVERSE RECOVERY TIME (ns) TC = 125°C 100 20K 120 750 700 650 600 −80 −40 0 40 80 120 160 IF, FORWARD CURRENT (A) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Reverse Recovery Time Figure 22. Collector−to−Emitter Breakdown Voltage vs. Junction Temperature www.onsemi.com 7 200 AFGY100T65SPD TYPICAL CHARACTERISTICS THERMAL RESPONSE (Zthjc) 1 0.1 0.5 0.2 0.1 0.05 Single Pulse 0.01 P DM Peak TJ = PDM x ZqJC + TC Duty Factor, D = t1/t2 0.02 t1 0.01 0.001 t2 0.0001 0.001 0.1 0.01 1 RECTANGULAR PULSE DURATION (sec) Figure 23. Transient Thermal Impedance of IGBT THERMAL RESPONSE (Zthjc) 1 0.5 0.1 0.2 0.1 Single Pulse P DM 0.02 0.01 t1 0.01 0.05 0.0001 Peak TJ = PDM x ZqJC + TC Duty Factor, D = t1/t2 t2 0.001 0.01 RECTANGULAR PULSE DURATION (sec) Figure 24. Transient Thermal Impedance of Diode www.onsemi.com 8 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CU ISSUE B DATE 28 OCT 2021 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXXXX XXXXXXXXX DOCUMENT NUMBER: DESCRIPTION: XXXX A Y WW ZZ 98AON13773G TO−247−3LD = Specific Device Code = Assembly Site Code = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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