Field Stop Trench IGBT with
Soft Fast Recovery Diode
120A, 650V
AFGY120T65SPD
AFGY120T65SPD which is AEC Q101 qualified offers very low
conduction and switch losses for a high efficiency operation in various
applications, rugged transient reliability and low EMI.
Meanwhile, this part also offers an advantage of outstanding parallel
operation performance with balance current sharing.
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120 A, 650 V,
VCESat = 1.6 V
Features
•
•
•
•
•
•
•
•
•
AEC−Q101 Qualified
Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 120 A
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co−efficient for Easy Parallel Operating
Tight Parameter Distribution
High Input Impedance
100% of the Parts are Tested for ILM
Short Circuit Ruggedness
Co−packed with Soft Fast Recovery Diode
C
G
E
Typical Applications
•
•
•
•
Traction Inverter for HEV/EV
Auxiliary DC/AC Converters
Motor Drives
Other Power−Train Applications Requiring High Power Switch
G
C
E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−to−Emitter Voltage
VCES
650
V
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
VGES
±20
±30
V
IC
160
120
A
Pulsed Collector Current
ILM
360
A
Pulsed Collector Current
ICM
360
A
Diode Forward Current (Note 1) @ TC = 25°C
@ TC = 100°C
IF
160
120
A
Maximum Power Dissipation
PD
714
357
W
SCWT
6
ms
Collector Current (Note 1)
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Short Circuit Withstand Time @ TC = 25°C
Voltage Transient Ruggedness (Note 2)
Operating Junction / Storage Temperature
Range
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5 seconds
dV/dt
10
V/ns
TJ, TSTG
−55 to
+175
°C
TL
265
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. VCC = 400 V, VGE = 15 V, IC = 360 A, Inductive Load
© Semiconductor Components Industries, LLC, 2020
July, 2020 − Rev. 0
1
TO−247−3LD
CASE 340CU
MARKING DIAGRAM
$Y&Z&3&K
AFGY120T
65SPD
$Y
&Z
&3
&K
AFGY120T65SPD
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
= Specific Device Code
ORDERING INFORMATION
Device
AFGY120T65SPD
Package
Shipping
TO−247−3LD 30 Units / Tube
Publication Order Number:
AFGY120T65SPD/D
AFGY120T65SPD
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.21
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.32
Thermal resistance junction−to−ambient
RqJA
40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V,
IC = 1 mA
BVCES
650
−
−
V
Temperature Coefficient of
Breakdown Voltage
VGE = 0 V,
IC = 1 mA
−
0.6
−
V/°C
Parameter
OFF CHARACTERISTICS
DBVCES
DTJ
Collector−emitter cut−off current,
gate−emitter short−circuited
VGE = 0 V,
VCE = 650 V
ICES
−
−
40
mA
Gate leakage current, collector−
emitter short−circuited
VGE = 20 V,
VCE = 0 V
IGES
−
−
±250
nA
VGE = VCE, IC = 120 mA
VGE(th)
4.3
5.3
6.3
V
VGE = 15 V, IC = 120 A
VGE = 15 V, IC = 120 A, TJ = 175°C
VCE(sat)
−
−
1.6
2.15
2.05
−
V
VCE = 30 V,
VGE = 0 V,
f = 1 MHz
Cies
−
4930
−
pF
Coes
−
375
−
Cres
−
42
−
f = 1 MHz
RG
−
3
−
W
VCE = 400 V,
IC = 120 A,
VGE = 15 V
Qg
−
125
187
nC
Qge
−
38
−
Qgc
−
40
−
td(on)
−
40
−
tr
−
104
−
td(off)
−
80
−
tf
−
116
−
Turn−on switching loss
Eon
−
6.6
−
Turn−off switching loss
Eoff
−
3.8
−
Total switching loss
Ets
−
10.4
−
td(on)
−
36
−
tr
−
112
−
td(off)
−
92
−
ON CHARACTERISTICS
Gate−emitter threshold voltage
Collector−emitter saturation voltage
DYNAMIC CHARACTERISTICS
Input capacitance
Output capacitance
Reverse transfer capacitance
Internal Gate Resistance
Gate charge total
Gate−to−emitter charge
Gate−to−collector charge
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C,
VCC = 400 V,
IC = 120 A,
RG = 5.0 W,
VGE = 15 V,
Inductive Load
TJ = 175°C,
VCC = 400 V,
IC = 120 A,
RG = 5.0 W,
VGE = 15 V,
Inductive Load
tf
−
160
−
Turn−on switching loss
Eon
−
10.5
−
Turn−off switching loss
Eoff
−
4.9
−
Total switching loss
Ets
−
15.4
−
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2
ns
mJ
ns
mJ
AFGY120T65SPD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Continued)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
IF = 120 A, TJ = 25°C
VFM
−
1.4
1.7
V
−
1.35
−
−
428
−
−
2026
−
−
107
−
−
203
−
−
2237
−
−
8155
−
DIODE CHARACTERISTIC
Diode Forward Voltage
IF = 120 A, TJ = 175°C
Reverse Recovery Energy
IF = 120 A, dlF/dt = 1000 A/ms,
VCE = 400 V, TJ = 25°C
Erec
IF = 120 A, dlF/dt = 1000 A/ms,
VCE = 400 V, TJ = 175°C
Diode Reverse Recovery Time
IF = 120 A, dlF/dt = 1000 A/ms,
VCE = 400 V, TJ = 25°C
Trr
IF = 120 A, dlF/dt = 1000 A/ms,
VCE = 400 V, TJ = 175°C
Diode Reverse Recovery Charge
IF = 120 A, dlF/dt = 1000 A/ms,
VCE = 400 V, TJ = 25°C
IF = 120 A, dlF/dt = 1000 A/ms,
VCE = 400 V, TJ = 175°C
Qrr
mJ
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
AFGY120T65SPD
TYPICAL CHARACTERISTICS
240
10 V
180
120
VGE = 8 V
60
0
2
4
6
IC, COLLECTOR CURRENT (A)
180
120
60
Common Emitter
VGE = 15 V
0
1
2
3
4
VGE = 8 V
60
0
2
4
6
8
90
60
30
0
5
Common Emitter
VGE = 15 V
TC = 175°C
0
3
TC = 25°C
6
9
12
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Typical Saturation Voltage
Figure 4. Transfer Characteristics
Common Emitter
VGE = 15 V
240 A
2.5
120 A
2.0
1.5
IC = 60 A
25
120
120
240
1.0
10 V
180
Figure 2. Typical Output Characteristics
TC = 175°C
3.0
240
Figure 1. Typical Output Characteristics
TC = 25°C
3.5
12 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
300
0
15 V
300
0
8
20 V
TC = 175°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
360
IC, COLLECTOR CURRENT (A)
360
TC = 25°C
12 V
300
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
15 V
IC, COLLECTOR CURRENT (A)
20 V
50
75
100
125
150
175
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
360
10
IC = 60 A
120 A
240 A
Common Emitter
TC = −40°C
8
6
4
2
0
6
8
10
12
14
TC, COLLECTOR−EMITTER CASE TEMPERATURE (°C)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. Case
Temperature
Figure 6. Saturation Voltage vs. VGE
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4
16
AFGY120T65SPD
IC = 60 A
120 A
240 A
Common Emitter
TC = 25°C
8
6
4
2
0
6
8
10
12
14
16
120 A
8
Common Emitter
TC = 175°C
240 A
6
4
2
0
6
8
10
12
14
Figure 7. Saturation Voltage vs. VCE
Figure 8. Saturation Voltage vs. VCE
15
Cies
Coes
100
Cres
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25°C
0.1
1
10
30
325 V
Common Emitter
TC = 25°C
12
16
390 V
9
VCC = 260 V
6
3
0
0
20
40
60
80
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
120
500
1000
TC = 25°C
TC = 175°C
100
SWITCHING TIME (ns)
IC, COLLECTOR CURRENT (A)
IC = 60 A
VGE, GATE−EMITTER VOLTAGE (V)
1K
10
10
VGE, GATE−EMITTER VOLTAGE (V)
10K
CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10
VGE, GATE−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
10 ms
100 ms
10
1 ms
1
0.1
Single Nonrepetitive Pulse TC = 25°C,
Curves must be derated linearly with
increase in temperature
1
10
DC
100
1000
tr
100
td(on)
10
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 120 A
0
10
20
30
40
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Rg, GATE RESISTANCE (W)
Figure 11. SOA Characteristics
Figure 12. Turn−On Characteristics vs. Gate
Resistance
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5
50
AFGY120T65SPD
TYPICAL CHARACTERISTICS
1000
TC = 25°C
TC = 175°C
SWITCHING TIME (ns)
SWITCHING TIME (ns)
1000
td(off)
tf
100
10
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 120 A
0
10
20
40
60
0
40
80
120
Figure 13. Turn−Off Characteristics vs. Gate
Resistance
Figure 14. Turn−On Characteristics vs.
Collector Current
160
TC = 25°C
TC = 175°C
SWITCHING LOSS (mJ)
tf
100
td(off)
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 5 W
0
40
80
120
Eon
Eoff
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 120 A
0
10
20
30
40
50
IC, COLLECTOR CURRENT (A)
Rg, GATE RESISTANCE (W)
Figure 15. Turn−Off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs. Gate Resistance
360
TC = 25°C
TC = 175°C
Eon
10
Eoff
1
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 5 W
0
10
1
160
IF, FORWARD CURRENT (A)
SWITCHING TIME (ns)
Common Emitter
VCC = 400 V, VGE = 15 V
RG = 5 W
50
100
SWITCHING LOSS (mJ)
10
IC, COLLECTOR CURRENT (A)
TC = 25°C
TC = 175°C
0.1
td(on)
Rg, GATE RESISTANCE (W)
1000
10
tr
100
1
80
TC = 25°C
TC = 175°C
20
40
60
80
100
100
1
0.1
120
TC = 125°C
10 TC = 175°C
TC = 25°C
0
0.5
1.0
1.5
2.0
IC, COLLECTOR CURRENT (A)
VF, FORWARD VOLTAGE (V)
Figure 17. Switching Loss vs. Collector
Current
Figure 18. Forward Characteristics
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6
2.5
AFGY120T65SPD
IR, REVERSE CURRENT (mA)
10,000
Qrr, REVERSE RECOVERY CHARGE (nC)
TYPICAL CHARACTERISTICS
TC = 175°C
1000
10
1
TC = 25°C
0.1
0.01
50
150
250
350
450
550
650
di/dt = 500 A/ms
di/dt = 1000 A/ms
1K
100
di/dt = 500 A/ms
TC = 25°C
TC = 175°C
0
20
40
60
80
VF, FORWARD CURRENT (V)
Figure 19. Reverse Current
Figure 20. Stored Charge
100
120
800
300
di/dt = 500 A/ms
250
di/dt = 1000 A/ms
200
150
di/dt = 500 A/ms
100
di/dt = 1000 A/ms
50
0
di/dt = 1000 A/ms
10K
VR, REVERSE VOLTAGE (V)
TC = 25°C
TC = 175°C
0
20
40
60
80
100
BVCES, COLLECTOR−TO−EMITTER
BREAKDOWN VOLTAGE (V)
trr, REVERSE RECOVERY TIME (ns)
TC = 125°C
100
20K
120
750
700
650
600
−80
−40
0
40
80
120
160
IF, FORWARD CURRENT (A)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Reverse Recovery Time
Figure 22. Collector−to−Emitter Breakdown
Voltage vs. Junction Temperature
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7
200
AFGY120T65SPD
TYPICAL CHARACTERISTICS
THERMAL RESPONSE (Zthjc)
1
0.1
0.5
0.2
0.1
0.05
Single Pulse
0.01
P DM
0.02
0.001
Peak TJ = PDM x ZqJC + TC
Duty Factor, D = t1/t2
t1
t2
0.01
0.0001
0.001
0.1
0.01
1
RECTANGULAR PULSE DURATION (sec)
Figure 23. Transient Thermal Impedance of IGBT
THERMAL RESPONSE (Zthjc)
1
0.5
0.1
0.2
0.1
P DM
Single Pulse
t1
0.02 0.01
0.01
t2
0.05
0.0001
Peak TJ = PDM x ZqJC + TC
Duty Factor, D = t1/t2
0.001
0.01
RECTANGULAR PULSE DURATION (sec)
Figure 24. Transient Thermal Impedance of Diode
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8
0.1
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CU
ISSUE B
DATE 28 OCT 2021
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXXX
XXXXXXXXX
DOCUMENT NUMBER:
DESCRIPTION:
XXXX
A
Y
WW
ZZ
98AON13773G
TO−247−3LD
= Specific Device Code
= Assembly Site Code
= Year
= Work Week
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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