ATP113-TL-H

Ordering number : ENA1755A ATP113 P-Channel Power MOSFET http://onsemi.com –60V, –35A, 29.5mΩ, Single ATPAK Features • • • ON-resistance RDS(on)1=22.5mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=2400pF(typ.) Halogen free compliance • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --60 V ±20 V --35 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 95 mJ --18 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --105 A 50 W °C Note : *1 VDD=--10V, L=500μH, IAV=--18A *2 L≤500μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP113-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP113 6.05 4.6 Electrical Connection 0.7 0.6 0.55 0.4 2.3 0.1 2.3 1.7 0.5 3 0.8 TL 2,4 2 1 9.5 7.3 LOT No. Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/72110PA TKIM TC-00002330 No. A1755-1/7 ATP113 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--60V, VGS=0V Ratings min typ Unit max --60 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--18A 37 RDS(on)1 ID=--18A, VGS=--10V 22.5 29.5 mΩ RDS(on)2 ID=--9A, VGS=--4.5V 27 38 mΩ RDS(on)3 ID=--5A, VGS=--4V 29 44 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD --1.2 --1 μA ±10 μA --2.6 2400 VDS=--20V, f=1MHz See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--35A IS=--35A, VGS=0V V S pF 250 pF 195 pF 15 ns 125 ns 250 ns 200 ns 55 nC 7.5 nC 12 nC --0.98 --1.5 V Switching Time Test Circuit 0V --10V VDD= --30V VIN ID=18A RL=1.67Ω VIN D PW=10μs D.C.≤1% VOUT G ATP113 P.G 50Ω S Ordering Information Device ATP113-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1755-2/7 ATP113 --10 --30 --20 25 °C Tc= --10 --5 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --18A 50 --9A 40 --5A 30 20 C 5° 10 = Tc 7 --2 75 °C 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 5 7 tf 7 5 tr 3 2 20 10 --25 0 25 50 75 100 125 5 7 --1.0 2 3 150 IT15604 IS -- VSD --100 7 5 3 2 --10 7 5 3 2 VGS=0V Single pulse --1.0 7 5 3 2 --0.1 7 5 3 2 IT15606 Ciss, Coss, Crss -- VDS f=1MHz Ciss 2 1000 7 5 3 Coss 2 td(on) 3 9A = -A , ID --18 V 5 = 4. I = -.0V, D --10 GS V = VGS 3 td(off) 2 = -VGS 30 7 100 10 7 --0.1 5A = -, ID 4.0V 40 5 2 --4.5 IT15602 Diode Forward Voltage, VSD -- V VDD= --30V VGS= --10V 3 --4.0 --0.01 7 5 3 2 --0.001 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 --1.3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 5 --3.5 50 IT15605 SW Time -- ID 1000 3 --3.0 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S °C 25 2 --2.5 60 0 --50 VDS= --10V Single pulse 3 --2.0 RDS(on) -- Tc IT15603 | yfs | -- ID --1.5 Gate-to-Source Voltage, VGS -- V 10 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 Gate-to-Source Voltage, VGS -- V --1.0 Single pulse 60 5 --0.5 70 Tc=25°C Single pulse 7 0 IT15601 RDS(on) -- VGS 70 0 --2.0 25° C --25 °C --0.4 5°C --0.2 Tc= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 75 ° C --25 °C Tc= --40 75° C Drain Current, ID -- A --15 V .5 --4 --2 5° C --6 .0V --20 --50 VGS= --3.0V 0V --10 .0V -8. 0V --25 VDS= --10V Single pulse 5V . --3 --16 . Drain Current, ID -- A --4 .0 V Tc=25°C Single pulse --30 ID -- VGS --60 25°C ID -- VDS --35 Crss 5 7 --10 Drain Current, ID -- A 2 3 5 7 --10 IT15607 100 7 0 --10 --20 --30 --40 --50 Drain-to-Source Voltage, VDS -- V --60 IT15608 No. A1755-3/7 ATP113 VGS -- Qg --10 --8 --7 --6 --5 --4 --3 3 2 20 30 40 50 Total Gate Charge, Qg -- nC PD -- Tc 60 30 20 10 0 0 20 40 60 80 100 2 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT15611 2 3 5 7 --10 2 3 5 7 --100 IT15610 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 40 0μ s Tc=25°C Single pulse IT15609 50 10 μs 10 Operation in this area is limited by RDS(on). --0.1 --0.1 Avalanche Energy derating factor -- % 60 Allowable Power Dissipation, PD -- W 3 2 --1 10 1m 10 s 10 ms DC 0ms op era tio n --10 7 5 --1.0 7 5 0 ID= --35A 3 2 --2 0 IDP= --105A (PW≤10μs) --100 7 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 ASO 3 2 VDS= --30V ID= --35A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15179 No. A1755-4/7 ATP113 Taping Specification ATP113-TL-H No. A1755-5/7 ATP113 Outline Drawing ATP113-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1755-6/7 ATP113 Note on usage : Since the ATP113 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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