ATP207-TL-H

Ordering number : ENA1319A ATP207 N-Channel Power MOSFET http://onsemi.com 40V, 65A, 9.1mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 40 PW≤10μs, duty cycle≤1% V 65 A 195 A 50 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 35 mJ 33 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=10V, L=50μH, IAV=33A *2 L≤50μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP207-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP207 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/91708PA TIIM TC-00001572 No. A1319-1/7 ATP207 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)2 ID=17A, VGS=4.5V Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time VGS=±16V, VDS=0V VDS=10V, ID=1mA RDS(on)1 Ratings min typ Unit max 40 ID=1mA, VGS=0V VDS=40V, VGS=0V VDS=10V, ID=33A ID=33A, VGS=10V Input Capacitance Rise Time Conditions V 1.5 12 1 μA ±10 μA 2.6 20 V S 7 9.1 mΩ 11 15.5 mΩ 2710 pF 330 pF Crss 220 pF td(on) tr 27 ns 290 ns 170 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=20V, VGS=10V, ID=65A 110 ns 54 nC 14 nC 11 IS=65A, VGS=0V 1.0 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=33A RL=0.61Ω VIN D PW=10μs D.C.≤1% VOUT G ATP207 P.G 50Ω S Ordering Information Device ATP207-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1319-2/7 ATP207 ID -- VDS V 40 30 50 40 30 VGS=3.5V 20 10 Tc=25°C Single pulse 10 1.0 1.5 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 33A 15 10 5 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 10 Tc= 7 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 25° 5°C --2 75°C 5 3 2 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 4.5 5.0 15 10 =33A V, I D =10.0 VGS 5 --40 --20 0 20 40 60 80 100 120 IS -- VSD 100 7 5 3 2 10 7 5 3 2 tf 100 7 5 tr td(on) 3 160 VGS=0V Single pulse 0 0.2 0.4 0.6 0.8 1.0 1.2 Ciss, Coss, Crss -- VDS 1.4 IT14028 f=1MHz Ciss 3 td(off) 140 IT14026 5 2 6.0 A 7 VDD=20V VGS=10V 3 5.5 IT14024 =17 V, I D =4.5 VGS Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 5 7 100 IT14027 SW Time -- ID 1000 4.0 20 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 1.0 3 0.1 3.5 Case Temperature, Tc -- °C 3 2 3.0 Single pulse 0 --60 16 VDS=0V Single pulse 5 2.5 RDS(on) -- Tc IT14025 | yfs | -- ID 7 2.0 1.5 Gate-to-Source Voltage, VGS -- V 0 2 1.0 25 20 0 0.5 0 IT14023 Tc=25°C Single pulse ID=17A 0 2.0 5°C 25°C --25°C 0.5 Tc= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 25 ° C 20 C 4.0V 5°C 50 60 --25° 60 70 Tc= 7 Drain Current, ID -- A 10. V 70 80 4.5V 1 6 .0 Drain Current, ID -- A 80 VDS=10V Single pulse 90 0V 90 ID -- VGS 100 6.0 8.0V 100 2 1000 7 5 Coss 3 Crss 2 2 100 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14029 7 0 5 10 15 20 25 30 35 Drain-to-Source Voltage, VDS -- V 40 IT14030 No. A1319-3/7 ATP207 VGS -- Qg 10 3 2 7 6 10 0 20 30 40 50 Total Gate Charge, Qg -- nC PD -- Tc 60 30 20 10 0 40 60 80 100 3 5 7 1.0 120 Case Temperature, Tc -- °C 140 160 IT14010 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT14032 EAS -- Ta 120 40 20 2 IT14031 50 0 Tc=25°C Single pulse 0.1 0.1 Avalanche Energy derating factor -- % 60 Allowable Power Dissipation, PD -- W 1.0 7 5 3 2 1 0 Operation in this area is limited by RDS(on). 3 2 n 2 0μ s io 3 3 2 10 7 5 s 10 m 0m s s 10 at er 4 ID=65A op 5 100 7 5 PW≤10μs 10 μs 10 1m C Drain Current, ID -- A 8 IDP=195A D Gate-to-Source Voltage, VGS -- V 9 ASO 5 VDS=20V ID=65A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT14011 No. A1319-4/7 ATP207 Taping Specification ATP207-TL-H No. A1319-5/7 ATP207 Outline Drawing ATP207-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1319-6/7 ATP207 Note on usage : Since the ATP207 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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